DTC10-N SANYO | Alldatasheet
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Features
- Peak OFF-state voltage : 200 to 600V. + RMS ON-state current: 10A + T0-220 package Absolute Maximum Ratings at Ta= 25°C DTC DTC DTC 10C-N 10E-N 10G-N_ unit Repetitive Peak OFF-State Voltage Vprm 200 400 600 v RMS ON-State Current Iqrms) Te=98°C, > > 10 A single-phase full-wave Surge ON-State Current Itsm Peak 1 cycle,50Hz > > 80 A Amperes Squared-Seconds sPT-dt ImsStS10ms > > 32 A’s Peak Gate Power Dissipation Pom £250Hz,dutyS10% > > 5 OW Average Gate Power Dissipation Pav) > > 0.5 WwW Peak Gate Current Icom £2 50Hz,duty 510% °> > +2 A Peak Gate Voltage Vom £2 50Hz,duty S 10% > > +10 Vv Junction Temperature Tj > > 125 °C Storage Temperature Tstg > —40to +125 °C Weight > > 1.8 g Electrical Characteristics at Ta= 25°C min typ max unit Repetitive Peak IprM Tj=125°C,Vp= Vprm 2 mA OFF-State Current Peak ON-State Voltage Vem Tym=14A 15 v Critical Rate of Rise of (dv/dt)C (Tj=125°C,Vp=200V(C), 10 Vis OFF-State Voltage 400V(E,G) Holding Current Ip Ry, =100Q2 50 mA Gate Trigger Current (I ) ler Vp=12V,R_= 202 30 mA (I) Igr Vp=12V,R,= 202 30 mA (1) = Igr Vp=12V,Ri= 202 50 mA (Vv) Jer Vp = 12V,R,,=202 30 mA Gate Trigger Voltage (I) Vor Vp=12V,R,=202 2 v (I) Ver Vp=12V,Ry=20Q 2 v (Il) Vgp Vp=12V,R,.=20Q 2 Vv (VY) Ver Vp = 12V,R,=202 2 v Gate Nontrigger Voltage Veo Tc=125°C,Vp=VprM 0.2 v Thermal Resistance Rth(@j-c) Between junction and case,AC 1.8 °C/W * : The gate trigger mode is shown below. Package Dimensions 1155 a ra ee ee == gl 3.64 aa 3 i SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . 3109MO,TS No.2096-1/3
's Ty - Vr a ITsM =n A < | || Rated lond «of | TAT | ase eA 1 Tf + Pe a a” / A a Z si [At E120 Aor, / ene 3 % 60 F4 es rs es 3 oT *) TE TTT 04 08 1216 20° 24 2.80 32 10 7S 7 9 357 09 . ON-State Voltage,V7 — V Number of Cycles at 50Hz,n Vg - Ig (1) 5 Ve - Ic (2) ” Minimum gate current and voltage required to trigger all devices I ( Shaded area indicates possible triggering —a0'CIgp (HD) >* Pointsat —40°C to +125°C. > eH 1 owt 1 ! ys ZZ. —40°CVG' aa 7 msi gs Vom=10Vv & Z LZ Z By Recommended gate 21 GZ ZZ Z 3 gl LX Leitenit oad tine" 21 ZZ ZAC ‘Ga 12! aoe J B ded gate a p \\eetiss — | BA ZA Z 5 y IV). BT | | 25°C gp ° &— 0. 08 TZ 16 20 24 aa 80 irs?) 160 200 wo Gate CurrentIg — A Gate Current,Ig — mA = ” Pr(AV) = 17 (RMS) - Ta max - I7(RMS) Sine full Sine fall- a ine full-wave rT | i ft] ? | || |] ine full-wave a) oge OO PTT ate g took Sa ry E NN Me 2”), rt NN 2 1! 180°C L/ 360°C ef l\\ WN Neo, 6 aa Lane A |conduetion angle |_| 32 o ARG, i, 2 \\ ONe5o ga [| ES a \\ NN On g | |b | A PSST toy | tl RPV & BN ON £ °° 2 4 6 8 vp W w % 2 4 8 w 2 “6 Cc) < RMS ON-State Current,Inams) — A RMS ON-State CurrentJnams) — A Mo Te max - IT(RMS) 160 Igt - Tc SR eee 2 ro! qo Coo L= LP ‘att | i So ft et TT TTT PECCCPT Te) BEE $8 ° Sine full-wave 5 Ne i || zp “rary Sat NTT TTT ATA Coch eH Bt AQ Fo EOS $6 . 2 aol Conduction angle 2 a PN “aero SS °o $k 0 6 Bd = 25 5 760 70 RMS ON-State Current,Iynms) — A Case Temperature,Te — °C ——______ BMS ON State Currents) A Case Temperatureye °C No.2096-2/3
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& ou [— 3. [~~ @ 4 2 = siti titty Lit TT yt © COT Piet ty Case Temperature,Te — °C Case Temperature,Te — °C 2 Rtn(j-c) - t . 100 Igr( tw) /IGT - tw LTT TET Ty EEE EE perenne we pry ty yy Ion ee a attLTe ty 5 sg TTT TP Ter se CEC PCT af EET Ee aE TELE T4 resativeis 3 pe Boh Resistive load Zo TIT TTT) So EEE ema H e1.0 1 att > ANS Pitt b= asco 4 a eS Bk SS [| otto [| Ce a ry ws CT te ETT a & AS S - -+T | TTT LOPES . PP 104 St ET : EPH on act A 10 10 100 1000 710 70 23 0 3 ‘Time,t —ms Gate Trigger Pulse Width,ty — ps WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products desoribed or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. HE Information (including cirouit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.2096-3/3