DTB3 SANYO | Alldatasheet

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+ Glass passivation for high reliability - Peak OFF-state voltage : 100 to 600V + RMS ON-state current : 3A - TO-202 package Repetitive Peak Vpru 100 200 400 600 V OFF-State Voltage RMS ON-State Current Iq«rms) Te=71°C, > > > 3 A single-phase full-wave Surge ON-State Current Itsm Peak 1 cycle,50Hz > > > 27 A Amperes Squared-Seconds fi?T-dt_ 1msStS10ms > > > 3.6 A’s Peak Gate Pom [250Hz,dutyS 10% > > > 3 OW Power Dissipation Average Gate Paay) > > ad 0.3 WwW Power Dissipation Peak Gate Current Igm [2 50Hz,dutyS 10% > > > £2 A Peak Gate Voltage Vom 12 50Hz,dutyS 10% > > > +10 Vv Junction Temperature Tj > > > 110 °C Storage Temperature Tstg ad > —40to+110 °C Weight > > > 15 og Electrical Characteristics at Ta= 25°C min typ max unit Repetitive Peak Iprm Tj=110°C, Vp=Vprm 1 mA OFF-State Current Peak ON-State Voltage Vim Ipm=4.54 15 Vv Holding Current ln Ri_=1002 25 mA Gate Trigger Current (1) Igy Vp=12V,RL=202 30) mA (II) Icr Vp=12V,Rp=202 30) mA (VY) Igp Vp=12V,R_=20Q 30 mA Gate Trigger VoltageX (I) Vor Vp=12V,RL=202 2 v (I) Ver Vp=12V,Ry=202 2 v (VY) Ver Vp=12V,R,=20Q 2 v Gate Nontrigger Voltage Vep Tc=110°C, Vp=V/2VpRM 0.2 Vv Thermal Resistance Rth(j-c) Between junction and case,AC 10 °C/W * ; The gate trigger mode is shown below. Package Dimensions 1142 (unit: mm ) a ia es a ee ce DL Beir ca it pl 28 i —_ 4 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3139MO,TS No.1876-1/3

= VW o “ESM =n > Rated load < } tae z 4 + z A ie re ee EM Se Su Het | | F 6 Pe a h — PES] a Zz 2, fp og, IN cH ry LETT a of Lf | tT ‘ Dry 10 is 20 25 20 as Lo ‘0 10 100 ON-State Voltage,V- — V Number of Cycles at 50Hz,n Vg - Ig (1) Ve - IG (2) [For details of shaded area, *[Minimum gate current and voltage required see gate trigger characteristic (2), totriggeralldevices i at 16} t > 7 1 V -40T et Ps Shaded area indicates = Z -40. Ver © "Wem=tov possible triggering points g LEE 3 at —40°C to +110°C, s ZZ Sal LN, Recommended gate Ba LEE Bese Ver 3 \\/ Ki epeuteoa ine 3 YZ 8 } LEN ° ZZ Lg LEASE al < ony 1 PACK Vv = 3; ZA ofl Ae ean Za HAE

9 Os 56 12 iy 20 Fry ° Es CJ 60 80 100 120

Gate Currentlg — A Gate Current,lg — mA Ea PT(AV) - I7(pMS} Ta max - IT(RMS) & [Sine full-wave » “[@Fineat _@Withfin [Sine fullawave 21 arae no} R.20% 90% 2mm Al in at a2 @50 x50 X 2mm Al fin a4 | % \\O70x70x2min Al fin in

3 F apt NSS {with silicone grease

§ 1 rao 54 ARNG 5 {angle a= | g& \\ NASAL att 22360" $ je l+a2=360 28 60 . > : iv eu | \\AL OSA ; A ON OSS wee | | ee NN, rd § 9 os 10 15 20. 28 30 iT a er) Z RMS ON-State Current,Iqanjs) — A RMS ON-State Currentylaams) — A Te _max - IT(RMS} I¢T - Te ‘ | “CTT TT res =202 omwtt[TT{[TT] , SL tet | Pt te 7” = $L EN eee BECK PES 38 wl. | ~~ : 7 zie f4cg Hy SC Pee is ae Z Fo | 1 TT Te Tet 3G sfcondustin aLi TTT TT ty ata ge PTT TT yt |

0 Cry 08 2 16 20 th 28 32 “0 20 2 o 1 uo

RMS ON-State Current,Ingns) — A Case Temperature,Te — °C No.1876-2/3

: Vet - Tc Ty - Te 16) 16) LT TT TTT ape LTT TT yy J a=rgoe sa tt TTT Prt) spb PrP rrr FL tN TT 3 = 3 og ET Pit p) FL NU TRS SN 8 eo i IN git TTP} aft TTP ANT § 04 I gy [> 3 = si TT TT PTT Ty LT TT TT yy re att iy TET yy alt tt ryt y | 6 "20 20 0 Wo 40 0 20 20 60 100 wo Case Temperature,Te — °C Case Temperature,Te — °C = Rth(j-c) - t Pulse Trigger Characteristic 20 100 rn 5 [ [ [TTT Resistive iond Rectangular ! a | yor i2y wave 3 . Le S16 «= TTT TT Rs? {¥ sy Z © TO a . tw 2.13 o 3 = 9

3 Pan eS eee

E TT {t 3 i Ne TET Tr rrr 1 Za a = a A oN Pity Fy tty Ty E | & Se 8 4 2 im pS SH CI § “Lt PTT | TT TTT a t+ py yt ee) E 10 10 10 co) 10 0 [) = Time,t — ms Gate Trigger Pulse Width,ty — us MI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the ‘ike, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.1876-3/3