DTA2 SANYO | Alldatasheet
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Technical content
Features
+ Low AC power control - TO-202 package facilitating easy mounting - Peak OF F-state voltage : 100 to 400V - RMS ON-state current : 2A - Weight : 1.5g Repetitive Peak VprM 100 200 400 v OFF-State Voltage RMS ON-State Current Ip(rms) Te=70°C, > > 2 A single-phase full-wave Surge ON-State Current Itsm Peak 1 cycle,50Hz > > 12 A Amperes Squared-Seconds fi?T-dt > > 0.7 A’s Peak Gate Power Dissipation Pom > > 3 OW Average Gate Power Dissipation Pgav) > > 03 W Peak Gate Current Icom > > 1.6 A Peak Gate Voltage Vom > > 10 v Junction Temperature Tj > > 110 °C Storage Temperature Tstg > -40to+110 °C Electrical Characteristics at Ta = 25°C min typ max unit Repetitive Peak Ippm —‘Tj= 110°C, Vp = Vorm 0.1 mA OFF-State Current ON-State Voltage Vr Ilp=6A 2.6 v Holding Current lu RL=1002 : 25 mA Gate Trigger Current %* (1) Igr Vp=12V,R,_= 202 15 mA ” (il) Igor Vp=12V,R_= 202 15 mA , (il) Igr Vp=12V,RL=202 ~_ ” (VW) Igr Vp=12V,R_=202 15 mA Gate Trigger Voltage * (1) Ver Vp=12V,RL=202 2.3 Vv ” (I) Ver Vp=12V,R_=202 23° 4V ° (il) Ver Vp=12V,RL=202 - ” (IV) Vor Vp=12V,R,=202 2.3 v Gate Nontrigger Voltage Vep Tc=110°C,Vp= Vprm 0.2 Vv Thermal Resistance Rthg-c) 12 °C/W 3% : The gate trigger mode is shown below. Package Dimensions 1102 Trigger mode (unfemam) - [ + | | kia — 8 cd bane 13.0. [te an a ee ee 5 | = |i ee ee i Ph [tpn ee ae aa SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3019TA,TS No.800-1/3
. It - YT » Itsm - 9 mo _% a ee ee ee ERS peeE RE 12 i BCC eo Sy AR Peseneeaelie an eee: 2 apeetecgeenls 2 2 bea | gi J eCOCTTAN Cor yf 0 3 tA oreo ° ON-State Veltage,Vq —'V “° " Number of Cycles at 80#2,n ” Vg - Ig Vet - Igt 10 s FAP CLP LCL (2 ee eee SOAS SO PP ORSEEES| ERASE Ey L—— Ene Cole 3 oz Oo a. Cocee & A 3 ft ast Vpeee et eee = 2) an HH Leer TTT 5 400 800 1200 1600, 2000 Oo 0 2 3% oe) sO Gate Current,lg — mA Gate Trigger Current,lgp — mA < Pray) = IT(RIS) Ta = IT(RIS) ‘eet Seay = “—T i?) a = Pot peorpserr B24 + 3 a [| Pel | CEASE ee A FE 1 3 MEER ee Ae eee Dos N eB pep TP eee Z 1 Peo pa z ° RMS ON-State Currentyppays; =A RMS ON-State Current,lnams) — A ~ To - IT(RMS) 0 Igt - Te SPELT oo EC PCPS Ee) ERE EEC 3 E e 2 40) POLLED LL) NCEE wo ASC ee asarmne | | | | 9 FTP) ft. 4 . °5 04 08 12 16 20 Px 28 a Oe 0 ” a _ 120 RMSON-State Currentiyams) -—A Case Temperature,Te — °C No.800-2/3
’ Pa PUTO ea 1 Cea oo ee s =U rf] & PT TA Coe BC a Ht “J i ia Z PE 5 Cee 24 a PT TTT rrery §‘oe FPP Pr pcp +40 -20 0 Da cy 100 S 3 y) Junction Temperature,Tj — °C é* ” Timert -s ° * No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made Or implied regarding its use or any infringements of intellectual property rights or other rights. of