DTA1

DTA1 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low AC power control use.
• Peak OFF-state voltage : 200 to 400V
• RMS ON-state current : 1A
• TO-92 package. Repetitive Peak V DRM 200 400 V OFF-StateVoltage RMS ON-State Current I T(RMS) Tc=74°C, single-phase fi 1.0 A full-wave Surge ON-State Current I TSM Peak 1 cycle, 50Hz fi 8A Amperes Squared-Seconds ∫i2T·dt 1ms ≤t≤10ms fi 0.32 A 2s Peak Gate Power Dissipation P GM f‡50Hz, duty≤10% fi 1W Average Gate Power Dissipation PG(AV) fi 0.1 W Peak Gate Current I GM f‡50Hz, duty≤10% fi ±0.5 A Peak Gate Voltage V GM f‡50Hz, duty≤10% fi ±6 V Junction Temperature Tj fi 125 °C Strage Temperature Tstg –40 to +125 °C Weght fi 0.2 g Electrical Characteristicsat Ta=25°C min typ max unit Repetitive Peak I DRM Tj=25°C, VD =V DRM 10 µA OFF-State Current Peak ON-State Voltage V TM ITM =1.5A 1.5 V Holding Current I H V D =12V, gate open 10 mA Gate Trigger Current* (I) I GT V D =12V, RL=20Ω 5m A (II) I GT V D =12V, RL=20Ω 5m A (III) I GT V D =12V, RL=20Ω 10 mA (IV) I GT V D =12V, RL=20Ω 5m A Gate Trigger Voltage* (I) V GT V D =12V, RL=20Ω 2V (II) V GT V D =12V, RL=20Ω 2V (III) V GT V D =12V, RL=20Ω 2– V (IV) V GT V D =12V, RL=20Ω 2V Gate Nontrigger Voltage V GD Tc=125°C, VD =V DRM 0.2 – V Thermal Resistance Rth(j-c) Between junction and case, AC 40 °C/W * : The gate trigger mode is shown below. Trigger mode T2 T1 G I + – + II + – – III – + + IV – + – Package Dimensions 1192B (unit : mm)

No.2283-2/3 ON-State Voltage, VT – V ON-State Current, IT – A Gate Current, IG – V Gate Voltage, VG – V RMS ON-State Current, IT(RMS) – A Average ON-State Power Dissipation, PT(AV) – W RMS ON-State Current, IT(RMS) – A Maximum Allowable Case Temperature, Tc max – °C Case Temperature, Tc – °C Gate Trigger Voltage, VGT – V Case Temperature, Tc – °C Gate Trigger Current, IGT – mA RMS ON-State Current, IT(RMS) – A Maximum Allowable Ambient Temperature, Ta max – °C Number of Cycles at 50Hz, n Surge ON-State Current, ITSM – A

No.2283-3/3 N o products described or contained herein are intended for use in surgical im plants, life-support system s, aerospace equipm ent, nuclear pow er control system s, vehicles, disaster/crim e-prevention equipm ent and the like, the failure of w hich m ay directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-m entioned use shall: Accept full responsibility and indem nify and defend SAN YO ELEC TR IC C O ., LTD ., its affiliates, subsidiaries and distributors and all their officers and em ployees, jointly and severally, against any and all claim s and litigation and all dam ages, cost and expenses associated w ith such use: N ot im pose any responsibilty for any fault or negligence w hich m ay be cited in any such claim or litigation on SAN YO ELEC TR IC C O ., LTD ., its affiliates, subsidiaries and distributors or any of their officers and em ployees jointly or severally. Inform ation (including circuit diagram s and circuit param eters) herein is for exam ple only; it is not guarant- eed for volum e production. SAN YO believes inform ation herein is accurate and reliable, but no guarantees are m ade or im plied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. This catalog provides inform ation as of O ctober, 1997. Specifications and inform ation herein are subject to change w ithout notice. Case Temperature, Tc – °C Pulse Trigger Characteristic Holding Current, IH – mA Gate Trigger Pulse Width, tw – µs IGT (tw) / IGT – % Time, t – s Transient Thermal Impedance, Rth(j-c) – °C/W