DT44TD NJSEMI | Alldatasheet
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, Li ne. HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS D44TD Series 300-400 VOLTS
2 AMP, 500 WATTS
The D44TD series of NPN Power Transistors is designed for use in switching applications requiring high-voltage capa- bility, fast switching speeds and low-saturation voltages. They are particularly suited for off-line switching power supplies, solid-state lighting ballast, invertes, solenoid/relay drivers and deflection circuits. Features:
- Performance information tailored for switching
applications
- 100°C maximum limits specified for:
- Switching times
- Saturation voltages
- Leakage currents
- 300 to 400V VcEO(sus) in a TO-220AB Package
- Very fast turn-off, tf < 180 nsec (typ.) @ 1.5A maximum ratings (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peak'1' Base Current — Continuous Peak'11 Total Power Dissipation @ Tc = 25" C @ Tc = 100°C Derate above 25" C Operating and Storage Junction Temperature Range SYMBOL VCEO VCEX VCEV VEBO ICM IBM PD Tj, TSTG ri ^C\\^ CASE STY DIMENSIONS ARE IN .404110.26) % \\«E-^ LE TO-220AB NCHEl AND (MILUMETE BI2.9S) i5(TT51 .1904.83 . _ .1704.32 1 - f^\\. .265(1 jf^±J f -245IS &£ + A » TIT'* «™,^U . M s/' ' ii* I TERM. 2 ^, Q65 TERM 3 — ^ 13.31 .50011: TTli .73! .22] ri .25} H 7|M!N. .Bi5|l'l4) ~ ~ .iSSRiil .015(0.38 TYPE ' TERM 1 TERM 2 TERM TO-220-AB BASE COLLECTOB EMIHER NPN COUECTOO EM TTER »») "" T338TT55T CASE TEMPERATURE REFERENCE X" POINT .220(5.591 *~.001(0.bz6> "^ .087IZ21I TAB COLLECTOB D44TD3 300 300 400 -55 to +150 D44TD4 350 350 500 -55 to +150 D44TD5 400 400 600 -55 to +150 UNITS Volts Volts volts Volts A A Wans W/°C thermal characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purpose: W from Case for 5 Seconds R0JC RflUA TL 2.5 260 2.5 260 2.5 260 "C/W "C/W (1) Pulse condition, tp < 5msec.
electrical characteristics (Tc = 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL MIN MAX UNIT off characteristics*1) Collector-Emitter Sustaining Voltage D44TD3 (lc = 25mA, IB = 0) D44TD4 D44TD5 Col lector-Emitter Voltage D44TD3 (lc = 2.0mA, IB1 = \\B2 = -4A) D44TD4 (VBE = -5V, L = 200 nt\\) D44TD5 Collector Cutoff Current (VCEV = Rated Value, VBE(OFF) = -1-5V) (VCEV = Rated Value, VBE(OFF) = -1-5V. Tc = 100°C) Emitter Cutoff Current (VEB = 7V,IC = 0) vCEO(sus) VCEX ICEV IEBO 300 350 400 300 350 400 0.1 1.0 1.0 Volts Volts mA mA second breakdown Second Breakdown with Base Forward Biased Clamped Inductive SOA with Base Reversed Bias FBSOA RBSOA SEE FIGURE 13 SEE FIGURE 14 on characteristics*1) DC Current Gain (lc = 1A,VCE = 2V) (IC = 2A, VCE = 3V) Collector-Emitter Saturation Voltage (ic = 1A, IB = -2A) (IC = 2A, IB = .4A) (IC = 1A, IB = .2A,TC = 100°C) Base-Emitter Saturation Voltage (IC = 2A, IQ = .4A) (IC = 2A. lB = .4A.Tc = 100eC) hFE VcE(SAT) VBE(SAT) 0.6 1.0 1.0 1.2 1.2 Volts Volts dynamic characteristics Current Gain — Bandwidth Product (IC = -25A, VCE = 10V. ftest = 1.0 MHz) Output Capacitance (VCB " 10V, IE = 0, f = 0.1 MHz) fT COB MHz PF switching characteristics MAXIMUM Resistive Load (See Figure 17 for Test Circuit) Delay Time Rise Time Storage Time Fall Time VCc = 250V, IC=1.5A IBI = IBS = o.3A, lp = 25 Msec Inductive Load, Clamped (See Figure 17 for Test Circuit) Storage Time Fall Time Storage Time Fall Time VCLAMP = 250V, IC=1.5A, IBI = '82 = °-3A- 'p = 25/isec VBE(OFF) - -5V L = 200 nb TC td tr ts tf tsv tf 25° C .06 0.6 2.5 0.5 3.0 0.3 100°C .08 0.8 3.0 0.6 3.5 0.6 MS fjaec psec /jsec MS usec TYPICAL ts tf 2.1 0.18 2.6 0.23 ti&ec M«ec (1) Pulse Duration = 300/is, Duty Factor < 2%. Do not measure on a curve tracer.