DT430 NJSEMI | Alldatasheet
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Technical content
<^>£.mi-L,onauctoi L/^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlington Power Transistor DT430
DESCRIPTION
: V(BR)CEO= SOOV(Min)
- High DC Current Gain : hFE= 2000(Min.)@ lc= 4A
- Low Collector Saturation Voltage : VCE(satr 3.0V(Max.)@ lc= 6A
APPLICATIONS
- Switching for dynamotor excitation
- General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T,=25T ) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 400 300 100 150 -55-150 UNIT V V V A A W i 2 3 oc \\S^ T BO — f J L PIN 1 BASE 2. COLLECTOR 3. EMITTER TO-3PN package h^ p ^. tuQif r~~^\\p H " H ; r DIM A R c D F F G H J K L N Q R S u Y C*- t mm MIH 19.90 15 50 4,70 0,90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 MAX 20.10 15 70 4.90 1,10 2.10 3.60 3,10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6,10 9.90 1 10.10 ^ fclj fc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlington Power Transistor DT430
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat)-1 VcE(sat)-2 ICBO IEBO hpE-1 hpE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc=10mA;lB=0 lc=1mA;lE=0 lE=50mA;lc=0 lc=1A; lB=10mA lc=6A; lB=50mA VCB= 400V; IE= 0 VEB= TV; lc= 0 |c= 4A; VCE= 4V lc= 5mA; VCE= 4V MIN 300 400 2000 300 TYP. MAX 1.5 3.0 100 100 UNIT V V V V V uA J^A