DT12030P

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GaN Power Transistors DT12030P GaN Power Transistors DT12030P Product Features Applications

• Up to 6GHz • WiMAX, LTE, WCDMA, GSM
• 30W Saturated Power @ 50V, 2.6GHz • Multi-Band, Multi-Mode
• 30W Saturated Power @ 50V, 2.6GHz • Multi-Band, Multi-Mode
• 75% Drain Efficiency @ Psat, 2.6GHz • Multi-Carrier
• 35% Drain Efficiency @ 38.5dBm, 2.6GHz • High Efficiency, Doherty Amplifier
• 35% Drain Efficiency @ 38.5dBm, 2.6GHz • High Efficiency, Doherty Amplifier DT12030PNS-CS01DT12030PNS-CS01 Typical Single-Carrier LTE Performance (VDS= +50V, TC=25℃, 50Ω)Typical Single-Carrier LTE Performance DS +50V, TC=25 , 50Ω) Frequency [MHz] Average Power*1Peak Power Frequency [MHz] Power [W] D ra in Efficiency [%] Power [W] G ain [dB] ACLR [dBc]D rain Efficiency [%] Note Note *1 Measured in the DT12030P test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF. Absolute Maximum RatingsAbsolute Maximum Ratings ConditionV alue UnitRating Symbol V V Drain to Source Voltage Gate to Source Voltage VDSS V 150 -10, +2 Tc=25℃ Tc=25℃V VDC Gate to Source Voltage Operating Voltage VGS VDD -10, +2 Tc=25℃ IGMAX Maximum Drain Current*1 I 3 A Tc=25℃ Tc=25℃ mA Maximum Forward Gate Current 7 PDISS Maximum Drain Current*1 IDMAX 3 A Tc=25℃ W Power Dissipation 18 Tc=85℃ TSTG T ℃ ℃ Storage Temperature Case Operating Temperature -40, +150 -65, +150 TC TJ 225 Case Operating Temperature Operating Junction Temperature*2 -40, +150 Note Soldering Temperature*3 TS 245 ℃ Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF.*2 Continuous use at maximum temperature will affect MTTF. *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal CharacteristicsThermal Characteristics Unit ConditionR ating Symbol V alue 7.60 *1 Note Thermal Resistance, Junction to Case RθJC ℃/W Tc=85℃ Note *1 Measured for the DT12030P at dissipation power of 18.4W. Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Electrical Characteristics (TC=25℃ unless otherwise noted)Electrical Characteristics (TC=25℃ unless otherwise noted) Characteristics Conditions S ymbol M in Typ M ax Unit VDS = 10V DC Characteristics*1 VDS = ID = V = Gate Threshold Voltage 10V VGS(TH) VDC 7.2mA -3.8 50V -3.0 -2. 3 VDS = ID = VDC 100mA Gate Quiescent Voltage 50V VGS(Q) -- -2.6 D VDS = V = 100mA Saturated Drain Current*2 6V IDS A -5.8 7.0VGS = VGS = Saturated Drain Current VDrain-Source Breakdown Voltage -8V VBR DS 150 --ID = VGS = -8V V 7.2mA Drain-Source Breakdown Voltage VBR 150 -- VGS = VDS = V = Gate Leakage Current -8V IGLKG -1.6 - - mA 120V VGS = VDS = mA 120V - Drain Leakage Current -8V ID LKG 2.9-VDS = V = 120V RF Characteristics (Fc=2595MHz unless otherwise noted) 50VVDS = IDQ = Saturated Output Power*3,6 50V PSAT 30 100mA - - W DQ VDS = I = 100mA 100mAPulsed Drain Efficiency*3 % 50V -η 70 75IDQ = POUT = 100mA PSAT Pulsed Pulsed Drain Efficiency*3 %-η 70 75 VDS = IDQ =Modulated Gain*4 50V GBR 18.0 - dB100mA 17.0IDQ = POUT = V = Modulated Gain*4 GBR 18.0 - dB100mA 38.5dBm 17.0 VDS = IDQ = 100mA -25.0LTE Linearity*4 50V ACLR -30.0 dBc-IDQ = POUT = V = 50V 100mA 38.5dBm -25.0LTE Linearity ACLR -30.0 dBc- VDS = IDQ = 100mA 30.0 35.0 - %Modulated Drain Efficiency*4 50V η POUT = VDS = 100mA 38.5dBm 30.0 35.0 - %Modulated Drain Efficiency η 50VVDS = IDQ = Output Mismatch Stress*3, 5 50V VSWR - - 10:1 ψ100mA POUT = Note PSAT Pulsed Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data.*2 Scaled from PCM data. *3 Pulse width 100μsec, Duty Cycle 10%. *5 Measured in the DT12030P test board amplifier circuit. No damage at all phase angles. *6 Psat is defined as ΔPout/ΔPin<0.1, where ΔPin is increased input power, ΔPout is increased output power. Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical Pulsed Signal Performance (Tc=25℃, Measured in the DT12030P-2600MHz test board amplifier circuit)Typical Pulsed Signal Performance (Tc=25 , Measured in the DT12030P-2600MHz test board amplifier circuit) 10047 Peak Power, Drain Efficiency vs. Frequency 8024 Pulsed Power Gain, Drain Efficiency vs. Output Power Peak Power 100 Power Gain 70 80 45 Drain Efficiency [%] Peak Power [dBm] Drain Efficiency [%] Power Gain [dB] Power Gain 2500MHz Drain Efficiency 70 44 Drain Efficiency [%] Peak Power [dBm] 30 Drain Efficiency [%] Power Gain [dB] Power Gain 2500MHz Power Gain 2595MHz Power Gain 2690MHz Drain Efficiency 2500MHz Drain Efficiency 2595MHz Drain Efficiency [%] Peak Power [dBm] Drain Efficiency Drain Efficiency [%] Power Gain [dB] Drain Efficiency 2595MHz Drain Efficiency 2690MHz 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 Drain Efficiency 22 27 32 37 42 472350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 Frequency [MHz] 22 27 32 37 42 47 Output Power [dBm] VDS = 50V, IDQ = 100mA, Pulse Width = 100μsec, Duty Cycle = 10%VDS = 50V, IDQ = 100mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the DT12030P-2600MHz test board amplifier circuit) LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain, Drain Efficiency vs. Output Power PARC 0 LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency 60 22 Power Gain, Drain Efficiency vs. Output Power Drain Efficiency PARC PARC [dB] Drain Efficiency [%] Power Gain Power Gain 50 19 Power Gain -15 -10 ACLR [dBc], PARC [dB] Drain Efficiency [%] Power Gain Drain Efficiency ACLR-L ACLR-U PARC 30 Drain Efficiency [%] Power Gain [dB] Power Gain 2505MHz Power Gain 2595MHz Power Gain 2685MHz Drain Efficiency 2505MHzPower Gain -25 -20 ACLR [dBc], Power Gain [dB], Drain Efficiency [%] Drain Efficiency [%] Power Gain [dB] Drain Efficiency 2505MHz Drain Efficiency 2595MHz Drain Efficiency 2685MHz ACLR -35 -30 ACLR [dBc], Power Gain [dB], 10 7 -400 2400 2450 2500 2550 2600 2650 2700 2750 2800 Frequency [MHz] Drain Efficiency 0 4 22 27 32 37 42 Output Power [dBm]Frequency [MHz] Output Power [dBm] PARC, ACLR vs. Output Power 10 0 PARC, ACLR vs. Output Power PARC 0 -1 U [dBc] PARC 2505MHz -20 -10 ACLR-U [dBc] PARC[dB] PARC 2505MHz PARC 2595MHz PARC 2685MHz ACLR-L 2505MHz ACLR-L 2595MHz ACLR-L 2685MHz ACLR-U 2505MHz -30 -20 ACLR-L [dBc], ACLR PARC[dB] ACLR-U 2505MHz ACLR-U 2595MHz ACLR-U 2685MHz ACLR -40 -30 ACLR ACLR -50-6 22 27 32 37 42 Output Power [dBm] PAVG = 38.5dBm, VDS = 50V, IDQ = 100mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDFLTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical 2-tone Intermodulation Imbalance PerformanceTypical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the DT12030P-2600MHz test board amplifier circuit) Intermodulation vs. Tone Spacing -15 Intermodulation vs. Tone Spacing -25-25 Intermodulation [dBc] -35 Intermodulation [dBc] -45 Intermodulation [dBc] IM3-L IM5-L -55 1 10 100 IM5-L IM3-U IM5-U 1 10 100 Tone Spacing [MHz] 2-tone Power = 42.8dBm, VDS = 50V, IDQ = 100mA Typical Small Signal Performance (Tc=25℃, Measured in the DT12030P-2600MHz test board amplifier circuit) Small Signal Gain, Input Return Loss vs. Frequency μFactor vs. Frequency 10 25 Small Signal Gain, Input Return Loss vs. Frequency 6 6 μFactor vs. Frequency Small Signal Gain Small Signal Gain [dB] 5 5 IRL Return Loss [dB] Small Signal Gain [dB] ' Factor Factor IRL -15 -10 Return Loss [dB] Small Signal Gain [dB] 2 μ' Factor μFactor -20 -15 Small Signal Gain [dB] 1 1 -25-10 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 Frequency [MHz] 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency [MHz]Frequency [MHz] Frequency [MHz] PIN = 0dBm, V DS = 50V, IDQ = 100mA Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Test Board Component Layout(2600MHz)Test Board Component Layout(2600MHz) Part Description 100 ohm Chip Resistor Part Number MCR03EZPJ101 Manufacturer ROHMR1 51 ohm Chip Resistor M CR10EZHJ510 ROHMR2 100 ohm Chip Resistor MCR03EZPJ101 ROHM 201CHA100JSLE TEMEX C1 5.6pF High Q Capacitor 201CHA5R6CSLE T EMEX C2, C14, C15 10pF High Q Capacitor 201CHA100JSLE TEMEX 201CHA1R0BSLE TEMEXC4 1.0pF High Q Capacitor C3, C13 0.5pF High Q Capacitor 201CHA0R5BSLE T EMEX C2, C14, C15 10pF High Q Capacitor 201CHA1R0BSLE TEMEX C8 Polymer Capacitor TCJB476M010R0070 AVX C4 1.0pF High Q Capacitor C9 100nF Chip Capacitor GRM188R71H104KA01D MURATA C10 10nF Chip Capacitor GRM188R71H103KA01D MURATA C16 100pF High Q Capacitor 201CHA101JSLE TEMEX C10 10nF Chip Capacitor GRM188R71H103KA01D MURATA C11 10pF Chip Capacitor GRM1885C1H100JA01D MURATA C16 100pF High Q Capacitor 201CHA101JSLE TEMEX GRM32ER72A225KA35L MURATAC17, C18, C19 2.2uF MLCC CTH32R102S20A MARUWAEMI1 1000pF EMI Filter C24 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG ROGERS Corp. CTH32R102S20A MARUWA CON1 DC Connector LW0640-10 H ANLIM PCB εr=3.48 ± 0.05, 0.020” (0.508mm) RO4350B (70X110mm) EMI1 1000pF EMI Filter TR 30W GaN Transistor DT12030P RFHIC Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical Pulsed Signal Performance (Tc=25℃, Measured in the DT12030P-2100MHz test board amplifier circuit)Typical Pulsed Signal Performance (Tc=25 , Measured in the DT12030P-2100MHz test board amplifier circuit) 10047 Peak Power, Drain Efficiency vs. Frequency 8022 Pulsed Power Gain, Drain Efficiency vs. Output Power 100 Power Gain Peak Power 80 45 Drain Efficiency [%] Peak Power [dBm] Drain Efficiency [%] Power Gain [dB] Power Gain 2110MHz Power Gain 2155MHz 70 44 Drain Efficiency [%] Peak Power [dBm] 30 Drain Efficiency [%] Power Gain [dB] Power Gain 2155MHz Power Gain 2200MHz Drain Efficiency 2110MHz Drain Efficiency 2155MHz Drain Efficiency 2200MHz Drain Efficiency Drain Efficiency [%] Peak Power [dBm] Drain Efficiency 20 Drain Efficiency [%] Power Gain [dB] Drain Efficiency 2200MHz 2035 2065 2095 2125 2155 2185 2215 2245 2275 22 27 32 37 42 472035 2065 2095 2125 2155 2185 2215 2245 2275 Frequency [MHz] 22 27 32 37 42 47 Output Power [dBm] VDS = 50V, IDQ = 100mA, Pulse Width = 100μsec, Duty Cycle = 10%VDS = 50V, IDQ = 100mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the DT12030P-2100MHz test board amplifier circuit) LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain, Drain Efficiency vs. Output Power LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency 60 22 Power Gain, Drain Efficiency vs. Output Power Drain Efficiency PARC PARC [dB] Drain Efficiency [%] Power Gain 50 19 -15 -10 ACLR [dBc], PARC [dB] Drain Efficiency [%] 30 Drain Efficiency [%] Power Gain [dB] Power Gain 2115MHz Power Gain 2155MHz Power Gain 2195MHz Drain Efficiency 2115MHz Power Gain -25 -20 ACLR [dBc], Power Gain [dB], Drain Efficiency [%] Drain Efficiency [%] Power Gain [dB] Drain Efficiency 2115MHz Drain Efficiency 2155MHz Drain Efficiency 2195MHz ACLR -35 -30 ACLR [dBc], Power Gain [dB], Power Gain Drain Efficiency ACLR-L ACLR-U PARC Drain Efficiency 10 7 -400 2035 2065 2095 2125 2155 2185 2215 2245 2275 Frequency [MHz] PARC 0 4 22 27 32 37 42 Output Power [dBm]Frequency [MHz] Output Power [dBm] PARC, ACLR vs. Output Power -100 PARC, ACLR vs. Output Power PARC -15-1 U [dBc] PARC 2115MHz -25 -20 ACLR-U [dBc] PARC[dB] PARC 2115MHz PARC 2155MHz PARC 2195MHz ACLR-L 2115MHz ACLR-L 2155MHz ACLR-L 2195MHz ACLR -30 -25 ACLR-L [dBc], ACLR PARC[dB] ACLR-L 2195MHz ACLR-U 2115MHz ACLR-U 2155MHz ACLR-U 2195MHz -35 -30 ACLR -40-6 22 27 32 37 42 Output Power [dBm] PAVG = 38.5dBm, VDS = 50V, IDQ = 100mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDFLTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical 2-tone Intermodulation Imbalance PerformanceTypical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the DT12030P-2100MHz test board amplifier circuit) Intermodulation vs. Tone Spacing -10 Intermodulation vs. Tone Spacing -20-20 Intermodulation [dBc] -30 Intermodulation [dBc] -40 Intermodulation [dBc] IM3-L IM5-L -50 1.00 10.00 100.00 IM3-U IM5-U 1.00 10.00 100.00 Tone Spacing [MHz] 2-tone Power = 42.8dBm, VDS = 50V, IDQ = 100mA Typical Small Signal Performance (Tc=25℃, Measured in the DT12030P-2100MHz test board amplifier circuit) Small Signal Gain, Input Return Loss vs. Frequency μFactor vs. Frequency Small Signal Gain 20 25 Small Signal Gain, Input Return Loss vs. Frequency 6 6 μFactor vs. Frequency Small Signal Gain Small Signal Gain [dB] 5 5 Return Loss [dB] Small Signal Gain [dB] ' Factor Factor IRL Return Loss [dB] Small Signal Gain [dB] 2 μ' Factor μFactor -10 Small Signal Gain [dB] 1 1 -15-10 1800 1900 2000 2100 2200 2300 2400 2500 Frequency [MHz] 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency [MHz]Frequency [MHz] Frequency [MHz] PIN = 0dBm, V DS = 50V, IDQ = 100mA Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Test Board Component Layout(2100MHz)Test Board Component Layout(2100MHz) Manufacturer R1 100 ohm Chip Resistor MCR03EZPJ101 ROHM Part Description P art Number R1 100 ohm Chip Resistor MCR03EZPJ101 ROHM R2 10 ohm Chip Resistor M CR10EZHJ100 ROHM C1 2.7pF High Q Capacitor 201CHA2R7CSLE T EMEX C2, C13 10pF High Q Capacitor 201CHA100JSLE TEMEX C3 ~ C6 1.5pF Chip Capacitor 201CHA1R5BSLE T EMEX C7 Polymer Capacitor TCJB476M010R0070 AVX C2, C13 10pF High Q Capacitor 201CHA100JSLE TEMEX C7 Polymer Capacitor TCJB476M010R0070 AVX C8 100nF Chip Capacitor GRM188R71H104KA01D MURATA C9 1nF Chip Capacitor GRM188R71H102KA01D MURATA C10 10pF Chip Capacitor GRM1885C1H100JA01D MURATA C11 0.3pF High Q Capacitor 201CHA0R3BSLE T EMEX C12 22pF High Q Capacitor 201CHA220JSLE TEMEX C10 10pF Chip Capacitor GRM1885C1H100JA01D MURATA C12 22pF High Q Capacitor 201CHA220JSLE TEMEX C14 100pF High Q Capacitor 201CHA101JSLE TEMEX C15 ~ C21 2.2uF MLCC GRM32ER72A225KA35L MURATA C22 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG EMI1 1000pF EMI Filter CT H32R102S20A MARUWA CON1 DC Connector LW0640-10 HANLIM C22 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG CON1 DC Connector LW0640-10 HANLIM TR 30W GaN Transistor DT12030P RFHIC Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 8 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical Pulsed Signal Performance (Tc=25℃, Measured in the DT12030P-1800MHz test board amplifier circuit)Typical Pulsed Signal Performance (Tc=25 , Measured in the DT12030P-1800MHz test board amplifier circuit) 10046 Peak Power, Drain Efficiency vs. Frequency 8024 Pulsed Power Gain, Drain Efficiency vs. Output Power 100 Power Gain Peak Power 80 44 Drain Efficiency [%] Peak Power [dBm] Drain Efficiency [%] Power Gain [dB] Power Gain 1805MHz Power Gain 1842.5MHz Power Gain 1880MHz Drain Effiiciency 70 43 Drain Efficiency [%] Peak Power [dBm] 30 Drain Efficiency [%] Power Gain [dB] Power Gain 1880MHz Drain Efficiency 1805MHz Drain Efficiency 1842.5MHz Drain Efficiency 1880MHzEffiiciency Drain Efficiency [%] Peak Power [dBm] Drain Efficiency Drain Efficiency [%] Power Gain [dB] 1750 1780 1810 1840 1870 1900 1930 Drain Efficiency 22 27 32 37 42 471750 1780 1810 1840 1870 1900 1930 Frequency [MHz] 22 27 32 37 42 47 Output Power [dBm] VDS = 50V, IDQ = 100mA, Pulse Width = 100μsec, Duty Cycle = 10%VDS = 50V, IDQ = 100mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the DT12030P-1800MHz test board amplifier circuit) LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain, Drain Efficiency vs. Output Power PARC LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency 60 24 Power Gain, Drain Efficiency vs. Output Power Drain Effiiciency -10 PARC [dB] Drain Efficiency [%] Power Gain Power Gain 50 21 Power Gain -20 -15 ACLR [dBc], PARC [dB] Drain Efficiency [%] Power Gain Drain Effiiciency ACLR-L ACLR-U PARC 30 Drain Efficiency [%] Power Gain [dB] Power Gain 1810MHz Power Gain 1842.5MHz Power Gain 1875MHz Drain Efficiency 1810MHz Power Gain ACLR -30 -25 ACLR [dBc], Power Gain [dB], Drain Efficiency [%] Drain Efficiency [%] Power Gain [dB] Drain Efficiency 1810MHz Drain Efficiency 1842.5MHz Drain Efficiency 1875MHz ACLR -40 -35 ACLR [dBc], Power Gain [dB], Drain Efficiency 10 9 -450 1760 1780 1800 1820 1840 1860 1880 1900 1920 Frequency [MHz] 0 6 22 27 32 37 42 Output Power [dBm]Frequency [MHz] Output Power [dBm] PARC, ACLR vs. Output Power -100 PARC, ACLR vs. Output Power PARC -15-1 U [dBc] PARC 1810MHz -25 -20 ACLR-U [dBc] PARC[dB] PARC 1810MHz PARC 1842.5MHz PARC 1875MHz ACLR-L 1810MHz ACLR-L 1842.5MHz ACLR-L 1875MHz ACLR-U 1810MHz ACLR -30 -25 ACLR-L [dBc], ACLR PARC[dB] ACLR-U 1810MHz ACLR-U 1842.5MHz ACLR-U 1875MHz ACLR -35 -30 ACLR -40-6 22 27 32 37 42 Output Power [dBm] PAVG = 38.5dBm, VDS = 50V, IDQ = 100mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDFLTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 9 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical 2-tone Intermodulation Imbalance PerformanceTypical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the DT12030P-1800MHz test board amplifier circuit) Intermodulation vs. Tone Spacing -15 Intermodulation vs. Tone Spacing -25-25 Intermodulation [dBc] -35 Intermodulation [dBc] -45 Intermodulation [dBc] IM3-L IM5-L -55 1.00 10.00 100.00 IM3-U IM5-U 1.00 10.00 100.00 Tone Spacing [MHz] 2-tone Power = 42.8dBm, VDS = 50V, IDQ = 100mA Typical Small Signal Performance (Tc=25℃, Measured in the DT12030P-1800MHz test board amplifier circuit) Small Signal Gain, Input Return Loss vs. Frequency μFactor vs. Frequency Small Signal Gain 10 25 Small Signal Gain, Input Return Loss vs. Frequency 6 6 μFactor vs. Frequency Small Signal Gain Small Signal Gain [dB] 5 5 IRL Return Loss [dB] Small Signal Gain [dB] ' Factor Factor -15 -10 Return Loss [dB] Small Signal Gain [dB] 2 μ' Factor μFactor -20 -15 Small Signal Gain [dB] 1 1 -25-10 1500 1600 1700 1800 1900 2000 2100 2200 Frequency [MHz] 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency [MHz]Frequency [MHz] Frequency [MHz] PIN = 0dBm, V DS = 50V, IDQ = 100mA Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 10 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Test Board Component Layout(1800MHz)Test Board Component Layout(1800MHz) Part Description P art Number M anufacturer R1 100 ohm Chip Resistor MCR03EZPJ101 ROHM R2 51 ohm Chip Resistor M CR10EZHJ510 ROHM R1 100 ohm Chip Resistor MCR03EZPJ101 ROHM C1 3.9pF High Q Capacitor 201CHA3R9CSLE T EMEX C2, C11, C12 10pF High Q Capacitor 201CHA100JSLE TEMEX C3, C4 1.5pF Chip Capacitor 201CHA1R5BSLE AVX TEMEX C6 Polymer Capacitor TCJB476M010R0070 C2, C11, C12 10pF High Q Capacitor 201CHA100JSLE TEMEX AVX C7 100nF Chip Capacitor GRM188R71H104KA01D MURATA C6 Polymer Capacitor TCJB476M010R0070 C8 1nF Chip Capacitor GRM188R71H102KA01D MURATA 10pF Chip Capacitor GRM1885C1H100JA01D MURATAC9 C10 18pF High Q Capacitor 201CHA180JSLE TEMEX C13 10pF Chip Capacitor GRM1885C1H100JA01D MURATA 100pF High Q Capacitor 201CHA101JSLE TEMEX C13 C14 ~ C20 2.2uF MLCC GRM32ER72A225KA35L MURATA 100pF High Q Capacitor 201CHA101JSLE TEMEX MARUWA C21 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG EMI1 1000pF EMI Filter CTH32R102S20A MARUWA CON1 DC Connector LW0640-10 H ANLIM EMI1 1000pF EMI Filter CTH32R102S20A TR 30W GaN Transistor DT12030P RFHIC Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 11 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical Pulsed Signal Performance (Tc=25℃, Measured in the DT12030P-3600MHz test board amplifier circuit)Typical Pulsed Signal Performance (Tc=25 , Measured in the DT12030P-3600MHz test board amplifier circuit) 10048 Peak Power, Drain Efficiency vs. Frequency 9018 Pulsed Power Gain, Drain Efficiency vs. Output Power Peak Power 100 80 46 Drain Efficiency [%] Peak Power [dBm] Power Gain 60 10 Drain Efficiency [%] Power Gain [dB] Power Gain 3400MHz Power Gain 3600MHz Power Gain 3800MHz Drain Efficiency 70 45 Drain Efficiency [%] Peak Power [dBm] 45 6 Drain Efficiency [%] Power Gain [dB] Power Gain 3800MHz Drain Efficiency 3400MHz Drain Efficiency 3600MHz Drain Efficiency 3800MHz Drain Efficiency [%] Peak Power [dBm] Drain Efficiency 15 Drain Efficiency [%] Power Gain [dB] 3200 3300 3400 3500 3600 3700 3800 3900 4000 Drain Efficiency 24 27 30 33 36 39 42 45 483200 3300 3400 3500 3600 3700 3800 3900 4000 Frequency [MHz] 24 27 30 33 36 39 42 45 48 Output Power [dBm] VDS = 50V, IDQ = 150mA, Pulse Width = 100μsec, Duty Cycle = 10%VDS = 50V, IDQ = 150mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the DT12030P-3600MHz test board amplifier circuit) LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency Power Gain, Drain Efficiency vs. Output Power PARC LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency 60 20 Power Gain, Drain Efficiency vs. Output Power -10 PARC [dB] Drain Efficiency [%] Power Gain 50 16 Drain Effciency -20 -15 ACLR [dBc], PARC [dB] Drain Efficiency [%] Power Gain Drain Effciency ACLR_L ACLR_U 30 Drain Efficiency [%] Power Gain [dB] Power Gain 3405MHz Power Gain 3600MHz Power Gain 3795MHz Drain Efficiency 3405MHzDrain Effciency ACLR -30 -25 ACLR [dBc], Power Gain [dB], Drain Efficiency [%] ACLR_U PARC Drain Efficiency [%] Power Gain [dB] Drain Efficiency 3405MHz Drain Efficiency 3600MHz Drain Efficiency 3795MHz Power Gain -40 -35 ACLR [dBc], Power Gain [dB], Drain Efficiency 10 0 Power Gain -455 3200 3300 3400 3500 3600 3700 3800 3900 4000 Frequency [MHz] 0 -4 22 27 32 37 42 Output Power [dBm]Frequency [MHz] Output Power [dBm] PARC, ACLR vs. Output Power -150 PARC, ACLR vs. Output Power PARC -20-1 U [dBc] PARC 3405MHz PARC 3600MHz -30 -25 ACLR-U [dBc] PARC[dB] PARC 3600MHz PARC 3795MHz ACLR-L 3405MHz ACLR-L 3600MHz ACLR-L 3795MHz ACLR-U 3405MHz ACLR -35 -30 ACLR-L [dBc], ACLR PARC[dB] ACLR-U 3405MHz ACLR-U 3600MHz ACLR-U 3795MHz ACLR -40 -35 ACLR -45-6 22 27 32 37 42 Output Power [dBm] PAVG = 38.5dBm, VDS = 50V, IDQ = 150mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDFLTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 12 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Typical Small Signal PerformanceTypical Small Signal Performance (Tc=25℃, Measured in the DT12030P-3600MHz test board amplifier circuit) Small Signal Gain, Input Return Loss vs. Frequency μFactor vs. Frequency 10 20 Small Signal Gain, Input Return Loss vs. Frequency 6 6 μFactor vs. Frequency Small Signal Gain 5 15 5 5 0 10 Return Loss [dB] Small Signal Gain [dB] 4 4 ' Factor Factor IRL -10 Return Loss [dB] Small Signal Gain [dB] 2 μ' Factor μFactor -15 -10 Small Signal Gain [dB] -20-10 2700 2900 3100 3300 3500 3700 3900 4100 4300 4500 0 0 0 1000 2000 3000 4000 5000 6000 7000 8000 Frequency [MHz] Frequency [MHz] PIN = 0dBm, V DS = 50V, IDQ = 150mA Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 13 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Test Board Component Layout(3600MHz)Test Board Component Layout(3600MHz) Part Description P art Number M anufacturer R1 12 ohm Chip Resistor MCR03EZP5J120 ROHMR1 12 ohm Chip Resistor MCR03EZP5J120 ROHM R2 10 ohm Chip Resistor M CR03EZPJ100 ROHM C1 1.0pF High Q Capacitor 201CHA1R0BSLE T EMEX C2 3.3pF High Q Capacitor 201CHA3R3CSLE TEMEX C3 0.5pF High Q Capacitor 201CHA0R5BSLE T EMEX C5 10nF Chip Capacitor GRM188R71H103KA91D TEMEX C2 3.3pF High Q Capacitor 201CHA3R3CSLE TEMEX C5 10nF Chip Capacitor GRM188R71H103KA91D TEMEX C6 100nF Chip Capacitor GRM188R71H104KA93D TEMEX C7 1uF High Q Capacitor GRM188R71H105KA12D AVX C8 Polymer Capacitor TCJB476M010R0070 AVX C9 3.9pF High Q Capacitor 501CHB3R9CSLE T EMEX C10 10pF High Q Capacitor 501CHB100JSLE TEMEX C8 Polymer Capacitor TCJB476M010R0070 AVX C10 10pF High Q Capacitor 501CHB100JSLE TEMEX C11 12pF High Q Capacitor 501CHB120JSLE TEMEX C13, C14 22uF MLCC RS80R2A226M MARUWA C12 100pF High Q Capacitor 501CHB101JSLE TEMEX C13, C14 22uF MLCC RS80R2A226M MARUWA C15 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG C16 2.2pF High Q Capacitor 201CHA2R2CSLE TEMEXC16 2.2pF High Q Capacitor 201CHA2R2CSLE TEMEX EMI1 1000pF EMI Filter CT H32R102S20A MARUWA CON1 DC Connector LW0640-10 H ANLIM CON2, CON3 RF Connector SMA 4Hole ANYCON2, CON3 RF Connector SMA 4Hole ANY TR 30W GaN Transistor DT120030P RFHICTR 30W GaN Transistor DT120030P RFHIC Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 14 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P INCH MILLIMETER Dim. Pin Description Pin No MAX MIN INCH MILLIMETER MIN TYP 4.90 5.03 MAX .188 Dim. TYP 4.78.193 .198 Function Gate Pin Description 3.90 4 .03 4.90 5.03 .149 . 154 . 158 3 .78 .188A1 4.78.193 .198Gate Drain 8.50 .315 .335.295 1.33 7.50 8.00 Source3 .003 . 005 . 007 0 .08 ⓐ- Lid 0.13 0 .18B3 2.18 0.75 0.88 1.93 ⓒ- Flange .025 .030 .034 0.63 .081ⓑ- Lead Frame .076 2.05.086B4 C1 (Chamfer) 0.75 0.88 ⓒ- Flange .025 .030 .034 0.63 C1 (Chamfer) 4.23 - 0.03.001 - - F4 - 4.20 - - L1 -- 4.20 0.30 - - - R1 (Radius) .004 .008 .012 0.10 L2 - - - Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 15 / 16 All specifications may change without notice Version 1.0

GaN Power Transistors DT12030P GaN Power Transistors DT12030P Revision HistoryRevision History VersionRelease Date Data Sheet StatusPart Number De scription March, 2018DT12030P 1.1 Initial release of datasheet Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com 16 / 16 All specifications may change without notice Version 1.0