DSW-DHG

DSW-DHG-I1 DOMINANT | Alldatasheet

Document overview

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Technical content

04/10/2017 V1.01 Features: > High brightness surface mount LED. > Designed for sideway illumination. > 120° viewing angle. > Small package outline. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to IR reflow soldering. > Environmental friendly; RoHS compliance. > Compliance to automotive standard; AEC-Q101. > Superior corrosion resistant. DomiLED Synonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness. DATA SHEET: Right Angle DomiLED InGaN White : DSW-DHG-I1 © 2005 DomiLED is a trademark of DOMINANT Opto Technologies. All rights reserved. Product specifications are subject to change without notice. Applications: > Automotive: interior applications, eg: switches, telematics, climate control system, dashboard, etc. > Consumer Appliances: LCD illumination as in PDAs, LCD TV. > Industry: white goods (eg: Oven, microwave, etc.). DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.02 DSW-DHG-S2T-F1H5-I1 DSW-DHG-S2T-I1L5-I1 DSW-DHG-S2T-M1P5-I1 White White White 120 120 120 224.0 224.0 224.0 Part Ordering Number Color Viewing Angle˚ Luminous Intensity @ 10mA IV (mcd) Appx. 1.1 Min. Typ. Max. 355.0 355.0 355.0 450.0 450.0 450.0 Optical Characteristics at Tj=25˚C Typ. (V) Vf @ If = 10mA Appx. 3.1 Max. (V) Vr @ Ir = 10uA Min. (V)Part Number DSW-DHG 3.0 3.2 5.0 Min. (V) 2.7 Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005) Reverse voltage; Ir (max) = 10uA ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature Power dissipation (at room temperature) Thermal resistance - Real Thermal Resistance Junction / ambient, R th JA real Junction / solder point, R th JS real - Electrical Thermal Resistance Junction / ambient, R th JA el Junction / solder point, R th JS el (Mounting on FR4 PCB, pad size >= 5 mm 2 per pad) 100 2000 125 -40 … +110 -40 … +110 100 550 330 385 230 mA mA V V mW K/W K/W K/W K/W InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.03 Vr @ Ir = 10uA Color Grouping Appx. 2.1 Color Bin Structure Bin 0.2498 0.2053 0.2402 0.2108 0.2269 0.2185 0.2136 0.2262 0.2003 0.2339 0.2597 0.2204 0.2509 0.2264 0.2388 0.2348 0.2267 0.2432 0.2146 0.2516 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy 0.2589 0.2000 0.2498 0.2053 0.2388 0.2348 0.2267 0.2432 0.2146 0.2516 0.2682 0.2146 0.2597 0.2204 0.2509 0.2264 0.2416 0.2623 0.2312 0.2719 0.2682 0.2146 0.2597 0.2204 0.2509 0.2264 0.2388 0.2348 0.2267 0.2432 0.2775 0.2292 0.2700 0.2361 0.2624 0.2431 0.2520 0.2527 0.2416 0.2623 0.2597 0.2204 0.2509 0.2264 0.2402 0.2108 0.2269 0.2185 0.2136 0.2262 0.2700 0.2361 0.2624 0.2431 0.2520 0.2527 0.2388 0.2348 0.2267 0.2432 1 2 3 4 InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM 0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 L K J H N M P F I G

04/10/2017 V1.04 Bin 0.2700 0.2361 0.2624 0.2431 0.2520 0.2527 0.2416 0.2623 0.2312 0.2719 0.2797 0.2509 0.2733 0.2590 0.2646 0.2700 0.2559 0.2810 0.2472 0.2920 0.2898 0.2664 0.2848 0.2757 0.2780 0.2883 0.2712 0.3009 0.2644 0.3135 0.3007 0.2830 0.2971 0.2935 0.2922 0.3077 0.2873 0.3219 0.2824 0.3361 0.3113 0.2992 0.3090 0.3108 0.3060 0.3266 0.3030 0.3424 0.3000 0.3582 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy 0.2775 0.2292 0.2700 0.2361 0.2624 0.2431 0.2559 0.2810 0.2472 0.2920 0.2861 0.2427 0.2797 0.2509 0.2733 0.2590 0.2712 0.3009 0.2644 0.3135 0.2950 0.2568 0.2898 0.2664 0.2848 0.2757 0.2873 0.3219 0.2824 0.3361 0.3045 0.2717 0.3007 0.2830 0.2971 0.2935 0.3030 0.3424 0.3000 0.3582 0.3138 0.2862 0.3113 0.2992 0.3090 0.3108 0.3183 0.3621 0.3170 0.3791 0.2861 0.2427 0.2797 0.2509 0.2733 0.2590 0.2646 0.2700 0.2559 0.2810 0.2950 0.2568 0.2898 0.2664 0.2848 0.2757 0.2780 0.2883 0.2712 0.3009 0.3045 0.2717 0.3007 0.2830 0.2971 0.2935 0.2922 0.3077 0.2873 0.3219 0.3138 0.2862 0.3113 0.2992 0.3090 0.3108 0.3060 0.3266 0.3030 0.3424 0.3231 0.3008 0.3219 0.3154 0.3209 0.3281 0.3196 0.3451 0.3183 0.3621 0.2797 0.2509 0.2733 0.2590 0.2646 0.2700 0.2520 0.2527 0.2416 0.2623 0.2898 0.2664 0.2848 0.2757 0.2780 0.2883 0.2646 0.2700 0.2559 0.2810 0.3007 0.2830 0.2971 0.2935 0.2922 0.3077 0.2780 0.2883 0.2712 0.3009 0.3113 0.2992 0.3090 0.3108 0.3060 0.3266 0.2922 0.3077 0.2873 0.3219 0.3219 0.3154 0.3209 0.3281 0.3196 0.3451 0.3060 0.3266 0.3030 0.3424 1 2 3 4 InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.05 InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance. Current pulsing should be used for dimming purposes. Bin 0.3219 0.3154 0.3209 0.3281 0.3196 0.3451 0.3183 0.3621 0.3170 0.3791 0.3335 0.3172 0.3339 0.3336 0.3341 0.3472 0.3349 0.3830 0.3353 0.4006 0.3447 0.3347 0.3465 0.3530 0.3479 0.3673 0.3517 0.4053 0.3536 0.4243 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy 0.3231 0.3008 0.3219 0.3154 0.3209 0.3281 0.3349 0.3830 0.3353 0.4006 0.3339 0.3336 0.3341 0.3472 0.3345 0.3654 0.3517 0.4053 0.3536 0.4243 0.3465 0.3530 0.3479 0.3673 0.3498 0.3863 0.3687 0.4276 0.3719 0.4473 0.3335 0.3172 0.3339 0.3336 0.3341 0.3472 0.3345 0.3654 0.3349 0.3830 0.3465 0.3530 0.3479 0.3673 0.3498 0.3863 0.3498 0.3863 0.3517 0.4053 0.3599 0.3735 0.3623 0.3882 0.3655 0.4079 0.3655 0.4079 0.3687 0.4276 0.3339 0.3336 0.3341 0.3472 0.3345 0.3654 0.3196 0.3451 0.3183 0.3621 0.3447 0.3347 0.3465 0.3530 0.3479 0.3673 0.3345 0.3654 0.3349 0.3830 0.3567 0.3535 0.3599 0.3735 0.3623 0.3882 0.3498 0.3863 0.3517 0.4053 1 2 3 4 InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

Brightness Group Luminous Intensity Appx. 1.1 IV (mcd) Luminous Intensity Group at Tj=25˚C 04/10/2017 V1.06 Group Wavelength distribution (nm)Forward Voltage (V) Appx. 3.1 Vf Binning (Optional) Vf Bin @ 10mA Please consult sales and marketing for special part number to incorporate Vf binning. VM6 VM7 InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.07 Forward Voltage VF (V) Forward Current I F (mA) Forward Current I F (mA) Temperature T(°C) Forward Current IF (mA) Wavelength λ (nm) Duty Ratio, % Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) ∆Cx, ∆Cy Maximum Current Vs Temperature IF=f(T) Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM Relative Luminous Intensity Vs Forward Current IV/IV(10mA) = f(IF); Tj = 25°C Relative Luminous Intensity I rel Forward Current IF (mA) 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 Forward Current IF (mA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 350 400 450 500 550 600 650 700 750 800 850 Wavelength λ (nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) 0 20 40 60 80 100 120 Ts Ta Ta = Ambient Temperature Ts = Solder Point Temperature -0.050 -0.040 -0.030 -0.020 -0.010 0.000 0.010 0.020 0.030 0.040 0.050 0 5 10 15 20 25 30 ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Forward Current IF (mA) Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 0.1 1 10 100 Relative Luminous Intensity Vs Forward Current IV/IV(10mA) = f(IF); Tj = 25°C Relative Luminous Intensity Irel Relative Luminous Intensity Irel Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 10mA ∆Cx ∆Cy Forward Current IF (mA) Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 Forward Current IF (mA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 350 400 450 500 550 600 650 700 750 800 850 Wavelength λ (nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) 0 20 40 60 80 100 120 Ts Ta Ta = Ambient Temperature Ts = Solder Point Temperature -0.050 -0.040 -0.030 -0.020 -0.010 0.000 0.010 0.020 0.030 0.040 0.050 0 5 10 15 20 25 30 ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Forward Current IF (mA) Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 0.1 1 10 100 Relative Luminous Intensity Vs Forward Current IV/IV(10mA) = f(IF); Tj = 25°C Relative Luminous Intensity Irel Relative Luminous Intensity Irel Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 10mA ∆Cx ∆Cy Forward Current IF (mA) Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 Forward Current IF (mA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 350 400 450 500 550 600 650 700 750 800 850 Wavelength λ (nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) 0 20 40 60 80 100 120 Ts Ta Ta = Ambient Temperature Ts = Solder Point Temperature -0.050 -0.040 -0.030 -0.020 -0.010 0.000 0.010 0.020 0.030 0.040 0.050 0 5 10 15 20 25 30 ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Forward Current IF (mA) Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 0.1 1 10 100 Relative Luminous Intensity Vs Forward Current IV/IV(10mA) = f(IF); Tj = 25°C Relative Luminous Intensity Irel Relative Luminous Intensity Irel Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 10mA ∆Cx ∆Cy Forward Current IF (mA) Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 Forward Current IF (mA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 350 400 450 500 550 600 650 700 750 800 850 Wavelength λ (nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) 0 20 40 60 80 100 120 Ts Ta Ta = Ambient Temperature Ts = Solder Point Temperature -0.050 -0.040 -0.030 -0.020 -0.010 0.000 0.010 0.020 0.030 0.040 0.050 0 5 10 15 20 25 30 ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Forward Current IF (mA) Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 0.1 1 10 100 Relative Luminous Intensity Vs Forward Current IV/IV(10mA) = f(IF); Tj = 25°C Relative Luminous Intensity Irel Relative Luminous Intensity Irel Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 10mA ∆Cx ∆Cy Forward Current IF (mA) Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 10mA 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 Forward Current IF (mA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 350 400 450 500 550 600 650 700 750 800 850 Wavelength λ (nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) 0 20 40 60 80 100 120 Ts Ta Ta = Ambient Temperature Ts = Solder Point Temperature -0.050 -0.040 -0.030 -0.020 -0.010 0.000 0.010 0.020 0.030 0.040 0.050 0 5 10 15 20 25 30 ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Forward Current IF (mA) Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 0.1 1 10 100 Relative Luminous Intensity Vs Forward Current IV/IV(10mA) = f(IF); Tj = 25°C Relative Luminous Intensity Irel Relative Luminous Intensity Irel Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 10mA ∆Cx ∆Cy Forward Current IF (mA) Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 Forward Current IF (mA) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 350 400 450 500 550 600 650 700 750 800 850 Wavelength λ (nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) 0 20 40 60 80 100 120 Ts Ta Ta = Ambient Temperature Ts = Solder Point Temperature -0.050 -0.040 -0.030 -0.020 -0.010 0.000 0.010 0.020 0.030 0.040 0.050 0 5 10 15 20 25 30 ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Forward Current IF (mA) Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 0.1 1 10 100 Relative Luminous Intensity Vs Forward Current IV/IV(10mA) = f(IF); Tj = 25°C Relative Luminous Intensity Irel Relative Luminous Intensity Irel Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 10mA ∆Cx ∆Cy Forward Current IF (mA) Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) Allowable Forward Current I F( mA ) Relative Luminous Intensity I rel

04/10/2017 V1.08 Radiation Pattern Junction Temperature Tj(°C) Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF =10mA Junction Temperature Tj(°C) InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 0 20 40 60 80 100 120 Relative Wavelength λrel (nm) Relative Wavelength Shift Vs Forward Current λdom = f(IF); Tj = 25°C Forward Current IF (mA) -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -50 -30 -10 10 30 50 70 90 110 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF = 10mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -30 -10 10 30 50 70 90 110 130 150 -0.100 -0.080 -0.060 -0.040 -0.020 0.000 0.020 0.040 0.060 0.080 0.100 -50 -30 -10 10 30 50 70 90 110 Relative Wavelength ∆λdom(nm) Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 10mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 10mA Relative Luminous Intensity Irel ∆Cx ∆Cy Items to check: 1. Rated Current in each graph title 2. Relative value=1 @ rated current 3. Typ Vf @ rated current 4. Relative value=1 @ 25C degree 5. Max value in each graph 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 0 20 40 60 80 100 120 Relative Wavelength λrel (nm) Relative Wavelength Shift Vs Forward Current λdom = f(IF); Tj = 25°C Forward Current IF (mA) -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -50 -30 -10 10 30 50 70 90 110 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF = 10mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -30 -10 10 30 50 70 90 110 130 150 -0.100 -0.080 -0.060 -0.040 -0.020 0.000 0.020 0.040 0.060 0.080 0.100 -50 -30 -10 10 30 50 70 90 110 Relative Wavelength ∆λdom(nm) Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 10mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 10mA Relative Luminous Intensity Irel ∆Cx ∆Cy Items to check: 1. Rated Current in each graph title 2. Relative value=1 @ rated current 3. Typ Vf @ rated current 4. Relative value=1 @ 25C degree 5. Max value in each graph 08/12/2016 V7.09 InGaN Warm White: DDF-LJG DOMINANT Opto Technologies Innovating Illumination TM Radiation Pattern Junction Temperature Tj(°C) Relative Forward Voltage ∆V F (V) Junction Temperature Tj(°C) Relative Luminous Intensity I rel Relative Luminous Intensity Vs Junction Temperature IV/IV(25°C) = f(Tj); IF = 20mA Junction Temperature Tj(°C) ∆Cx , ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA 0.270° 90° 80° 60° 50° 40° 30° 20° 0.6 0.4 1.0 0.8 10° 0° -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -50 -30 -10 10 30 50 70 90 110 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 130 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF -V F(25°C) = f(Tj); IF = 20mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 20mA Relative Luminous Intensity Irel -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -50 -30 -10 10 30 50 70 90 110 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 130 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF -V F(25°C) = f(Tj); IF = 20mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 20mA Relative Luminous Intensity Irel Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF =20mA -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 -50 -30 -10 10 30 50 70 90 110 130 ∆Cx ∆Cy -0.030 -0.025 -0.020 -0.015 -0.010 -0.005 0.000 0.005 0.010 0.015 0.020 0.025 0.030 -50 -30 -10 10 30 50 70 90 110 130 Relative Wavelength ∆λdom(nm) Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) ∆Cx , ∆Cy Relative Forward Voltage ∆V F (V) Junction Temperature Tj(°C) Relative Luminous Intensity I rel 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 0 20 40 60 80 100 120 Relative Wavelength λrel (nm) Relative Wavelength Shift Vs Forward Current λdom = f(IF); Tj = 25°C Forward Current IF (mA) -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -50 -30 -10 10 30 50 70 90 110 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF = 10mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -30 -10 10 30 50 70 90 110 130 150 -0.100 -0.080 -0.060 -0.040 -0.020 0.000 0.020 0.040 0.060 0.080 0.100 -50 -30 -10 10 30 50 70 90 110 Relative Wavelength ∆λdom(nm) Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 10mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 10mA Relative Luminous Intensity Irel ∆Cx ∆Cy Items to check: 1. Rated Current in each graph title 2. Relative value=1 @ rated current 3. Typ Vf @ rated current 4. Relative value=1 @ 25C degree 5. Max value in each graph Relative Luminous Intensity Vs Junction Temperature IV/IV(25°C) = f(Tj); IF = 10mA Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 10mA

04/10/2017 V1.09 Right Angle DomiLED • InGaN White : DSW-DHG-I1 Package Outlines Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Au Plating High Temperature Resistant Plastic, PPA Silicone Au Plating InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM Note : Primary thermal path is through Cathode lead of LED package. General tolerance +/- 0.1mm.

04/10/2017 V1.010 Recommended Solder Pad InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.011 Taping and orientation

• Reels come in quantity of 2500 units.
• Reel diameter is 180 mm. InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.012 Packaging Specification InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM 08/03/2013 V5.09 Packaging Specification InGaN : DDx-DRxDOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.013 Packaging Specification Average 1pc Right Angle DomiLED 1 completed bag (2500pcs) 0.034 190 ± 10Weight (gram) Cardboard Box Dimensions (mm) Empty Box Weight (kg) Super Small Small Medium Large For Right Angle DomiLED Reel / BoxCardboard Box Size Weight (gram) 0.010 240 ± 10 DOMINANT TM Moisture sensitivity level Moisture absorbent material + Moisture indicator The reel, moisture absorbent material and moisture indicator are sealed inside the moisture proof foil bag Reel Barcode label Label (L) Lot No : lotno (P) Part No : partno (C) Cust No : partno (G) Grouping : group (Q) Quantity : quantity (D) D/C : date code (S) S/N : serial no DOMINANT Opto Technologies ML TEMP 2 260˚C RoHS Compliant Made in Malaysia 325 x 225 x 190 325 x 225 x 280 570 x 440 x 230 570 x 440 x 460 0.38 0.54 1.46 1.92 7 reels MAX 11 reels MAX 48 reels MAX 96 reels MAX InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.014 Time (sec) 0 50 100 150 200 300 250 225 200 175 150 125 100 275Temperature (˚C) Classification Reflow Profile (JEDEC J-STD-020C) Ramp-up 3˚C/sec max. 255-260˚C 10-30s 60-150s Ramp- down 6˚C/sec max. Preheat 60-180s 480s max 217˚C Recommended Pb-free Soldering Profile InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

04/10/2017 V1.015 Appendix 1) Brightness: 1.1 Luminous intensity is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3). 1.2 Luminous flux is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3). 1.3 Radiant intensity is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3). 1.4 Radiant flux is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3). 2) Color: 2.1 Chromaticity coordinate groups are measured with an internal reproducibility of ± 0.005 and an expanded uncertainty of ± 0.01 (accordingly to GUM with a coverage factor of k=3). 2.2 DOMINANT wavelength is measured with an internal reproducibility of ± 0.5nm and an expanded uncertainty of ± 1nm (accordingly to GUM with a coverage factor of k=3). 3) Voltage: 3.1 Forward Voltage, Vf is measured with an internal reproducibility of ± 0.05V and an expanded uncertainty of ± 0.1V (accordingly to GUM with a coverage factor of k=3). 4) Corrosion Robustness: 4.1 Test conditions: 40 °C / 90 % rh / 15 ppm H2S / 336 h. = Stricter than IEC 60068-2-43 (H2S) [25 °C / 75% rh / 10 ppm H2S / 21 days]. InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

Revision History

All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT Opto Technologies does not assume any liability arising out of the application or use of any product described herein. DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function or design. DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems without the express written approval from the Managing Director of DOMINANT Opto Technologies . Page Subjects Initial Release Date of Modification

04 Oct 2017

04/10/2017 V1.016 InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM

DOMINANT Opto Technologies is a dynamic company that is amongst the world’s leading automotive LED manu- facturers. With an extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing and development capabilities have become a trusted and reliable brand across the globe. More in- formation about DOMINANT Opto Technologies, a ISO/TS 16949 and ISO 14001 certified company, can be found under http://www.dominant-semi.com. Please contact us for more information: DOMINANT Opto Technologies Sdn. Bhd Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia. Tel: +606 283 3566 Fax: +606 283 0566 E-mail: sales@dominant-semi.com InGaN White : DSW-DHG-I1 DOMINANT Opto Technologies Innovating Illumination TM