DSS345-F HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 45V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode DSS345 : S345 H igh Diode Semiconductor Notes: pad areas SOD-1 23FL DSS345 Item Symbol Unit Test Conditions DSS345 V RRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance 3.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (T =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =3.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ I RRM2 Ta =100℃ Thermal Resistance(Typical) R θJ-A W Between junction and ambient 55 R θJ-L Between junction and terminal 17 0.55 0.5 Maximum RMS Voltage V RMS V 31.5 DSS345 Repetitive Peak Reverse Voltage
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5mm×5mm)Copper Pad Areas TL( 100 3.0 25 75 125 2.5 2.0 1.5 1.0 0.5 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) T A = 150 °C T A = 125 °C T A = 25 °C 100 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100
H igh Diode Semiconductor 1.0 0.15 2.8 0.15 1.8± 0.1 Cathode Band Top View 3.7 0.15 0.8 0.1 1.3± 0.1 0.12-0.20 Dimensions in millimeters 2.85 1.4 1.2 SOD-1 23FL SOD-1 23FL
Reel Taping Specifications For Surface Mount Devices-SOD123FL H igh Diode Semiconductor SOD123FL