DSS32 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 20V-100V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SXX H igh Diode Semiconductor Notes: pad areas SOD-1 23SL XX:From 32 To 320 DSS32 THRU DSS320 Item Symbol Unit Test Conditions DSS3 V RRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance 3.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 70 Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (T =25℃ Unless otherwise specified） Item Symbol Unit Test Condition DSS3 Peak Forward Voltage V F V I F Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ 0.5 0.1 I RRM2 Ta =100℃ 10 5.0 Thermal Resistance(Typical) R θJ-A W Between junction and ambient 55 R θJ-L Between junction and terminal 17 20 30 40 50 60 80 100 150 200 2 3 4 5 6 8 10 15 20 2 3 4 5 6 8 10 15 20 Maximum RMS V RMS V Vo ltage 14 21 28 35 56 70 10542 Repetitive Peak Reverse Voltage 140
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5mm×5mm)Copper Pad Areas TL( 100 3.0 25 75 125 DSS32-DSS34 DSS35-DSS320 2.5 2.0 1.5 1.0 0.5 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 DSS32-DSS34 DSS35-DSS36 DSS38-DSS310 DSS315-DSS320 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) 0 20 40 60 80 100 0.001 Tj=25 Tj=75 100 1.0 0.1 0.01 DSS32-DSS36 DSS38-DSS320 Tj=125 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 VF(V)
H igh Diode Semiconductor 2.85 1.4 1.2 SOD-1 23SL SOD-1 23SL 0.95 0.15 2.75 0.15 1.8± 0.1 Cathode Band Top View 3.65 0.15 0.8 0.1 1.0± 0.1 0.12-0.20 Dimensions in millimeters
Reel Taping Specifications For Surface Mount Devices-SOD123SL H igh Diode Semiconductor SOD123SL