DSS25D-0045-T258 SEME-LAB | Alldatasheet
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R THj–case Thermal Resistance Junction – Case TBA DSS25D-0045-T258 Prelim. 9/98Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. IFRMS RMS Forward Current (TJ = TVJM ) IFAV Average Forward Current IFSM Maximum Surge Forward Current tp = 10ms, 50Hz IAR Reptetive Avalande Current VA = 1.5 VRRM , f = 10KHz TSTG Storage Temperature TJ Junction Temperature PTOT Total Power Dissipation 35A 25A 550A 1.8A 150oC – 55 to +150oC TBA. MECHANICAL DATA Dimensions in mm 123 17.65 (0.695) 17.39 (0.685) 4.19 (0.165) 3.94 (0.155) Dia. 13.84 (0.545) 13.58 (0.535) 17.96 (0.707) 17.70 (0.697) 19.05 (0.750) 12.70 (0.500) 1.65 (0.065) 1.39 (0.055) Typ. 5.08 (0.200) BSC 3.56 (0.140) BSC 21.21 (0.835) 20.70 (0.815) 1.14 (0.707) 0.88 (0.035) 6.86 (0.270) 6.09 (0.240) DUAL SCHOTTKY BARRIER DIODE IN A HERMETIC TO258 PACKAGE FEATURE
- 25A, 45V Dual Common Cathode Configuration L o w VF Low switching Losses TO–258 METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (per diode)) DSS25D-0045-T258 Parameter Test Conditions Min. Typ. Max. Unit VF Forward Voltage IR Reverse Current IF = 25A T J = 125°C IF = 25A T J = 25°C IF = 50A T J = 125°C VR = 45V T J = 25°C VR = 45V T J = 125°C 0.65 0.75 0.80 0.5 V mA Pin 1– Anode 1 Pin 2 – Cathode Pin 3 – Anode 2 ELECTRICAL CHARACTERISTICS (Per Diode) K THERMAL DATA *Pulse Test: Pulse Duration = 300 /G6D s , Duty Cycle /GA3 2%