DSS24L HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 40V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode DSS24L : S24L H igh Diode Semiconductor Notes: pad areas SOD-1 23FL DSS24L Low Vf Item Symbol Unit Conditions DSS2 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, 2.0 I FSM A 70 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG Resistance load, TL= 60Hz Half-sine wave,1 cycle, Ta=25℃ Surge(Non-repetitive)Forward Current -55~+150 ℃ 100 Maximum RMS Voltage V RMS V 28 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V Peak Reverse Current I RRM1 mA V RM RRM Ta=25℃ I RRM2 Ta=125℃ 20 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient R θJ-L Between junction and lead 0.45 =2A Ta=25℃ I F 0.1 DSS24L
H igh Diode Semiconductor IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5mm×5mm)Copper Pad Areas TL( 100 25 75 125 2.0 1.0 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) T A = 150 °C T A = 100 °C T A = 25 °C 100 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.20
H igh Diode Semiconductor 1.0 0.15 2.8 0.15 1.8± 0.1 Cathode Band Top View 3.7 0.15 0.8 0.1 1.3± 0.1 0.12-0.20 Dimensions in millimeters 2.85 1.4 1.2 SOD-1 23FL SOD-1 23FL
Reel Taping Specifications For Surface Mount Devices-SOD123FL H igh Diode Semiconductor SOD123FL