DSS22-F HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 20V-100V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode DSS22-DSS210 : S22-S210 H igh Diode Semiconductor Notes: pad areas SOD-1 23FL DSS22 THRU DSS210 Item Symbol Unit Test Conditions DSS Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) 2.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition DSS Peak Forward Voltage V F V I F =2.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ I RRM2 Ta =100℃ 10 5.0 Thermal Resistance(Typical) R θJ-A W Between junction and ambient 75 R θJ-L Between junction and terminal 17 22 23 24 25 26 28 210 20 30 40 50 60 80 100 -55~+125 -55~+150 0.55 0.70 0.85 0.5 22 23 24 25 26 28 210 0.1 V 20 30 40 50 60 80 100 Maximum RMS Voltage
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 100 0.5 1.0 1.5 2.0 2.5 25 75 125 DSS22-DSS24 DSS25-DSS210 FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 DSS22-DSS24 DSS25-DSS26 DSS28-DSS210 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) 0 20 40 60 80 100 0.001 Tj=25 Tj=75 100 1.0 0.1 0.01 SS32A-SS36A SS38A-SS320A Tj=75
H igh Diode Semiconductor 1.0 0.15 2.8 0.15 1.8± 0.1 Cathode Band Top View 3.7 0.15 0.8 0.1 1.3± 0.1 0.12-0.20 Dimensions in millimeters 2.85 1.4 1.2 SOD-1 23FL SOD-1 23FL
Reel Taping Specifications For Surface Mount Devices-SOD123FL H igh Diode Semiconductor SOD123FL