DSS215 HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 150V-200V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SXX H igh Diode Semiconductor Notes: pad areas SOD-1 23SL XX:From 215 To 220 DSS215 THRU DSS220 Item Symbol Unit Test Conditions DSS Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) 2.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 40 Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition DSS Peak Forward Voltage V F V I F =2.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ I RRM2 Ta =100℃ Thermal Resistance(Typical) R θJ-A W Between junction and ambient 75 R θJ-L Between junction and terminal 17 215 220 150 200 0.95 0.35 215 220 5.0 V 105 140 Maximum RMS V RMS Voltage -55 ~ +150
H igh Diode Semiconductor IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.20 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 100 0.5 1.0 1.5 2.0 2.5 25 75 125 FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
H igh Diode Semiconductor 2.85 1.4 1.2 SOD-1 23SL SOD-1 23SL 0.95 0.15 2.75 0.15 1.8± 0.1 Cathode Band Top View 3.65 0.15 0.8 0.1 1.0± 0.1 0.12-0.20 Dimensions in millimeters
Reel Taping Specifications For Surface Mount Devices-SOD123SL H igh Diode Semiconductor SOD123SL