DS21354 DALLAS | Alldatasheet

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DS21354, Rev B2 Dallas Semiconductor

4401 South Beltwood Parkway

Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com ph: 972-371-3726 fax: 972-371-6016 mbl: 214-435-6610

Conclusion: DS21354, Rev B2 The following qualification successfully meets the quality and reliability standards required of all Dallas Semiconductor products and processes: Device Description: A description of this device can be found in the product data sheet. You can find the product data sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm. Reliability Derating: The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that are temperature accelerated. AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts AfT = Acceleration factor due to Temperature tu = Time at use temperature (e.g. 55°C) ts = Time at stress temperature (e.g. 125°C) k = Boltzmann’s Constant (8.617 x 10-5 eV/°K) Tu = Temperature at Use (°K) Ts = Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All deratings will be done from the stress ambient temperature to the use ambient temperature. An exponential model will be used to determine the acceleration factor for failure mechanisms, which are voltage accelerated. AfV = exp(B*(Vs - Vu)) AfV = Acceleration factor due to Voltage Vs = Stress Voltage (e.g. 7.0 volts) Vu = Maximum Operating Voltage (e.g. 5.5 volts) The Constant, B, related to the failure mechanism is derived from either internal studies or industry accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are unknown. All deratings will be done from the stress voltage to the maximum operating voltage. Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the 60% or 90% confidence level (Cf). In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing product will continue to meet Maxim's quality and reliability standards. The current status of the reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html. The failure rate, Fr, is related to the acceleration during life test by: Fr = X/(ts * AfV * AfT * N * 2) X = Chi-Sq statistical upper limit N = Life test sample size

The calculated failure rate for this device/process is: The parameters used to calculate this failure rate are as follows: Cf: 60% Ea: 0.7 B: 0 Tu: 25 Vu: 5.5°C Volts The reliability data follows. A the start of this data is the device information. The next section is the detailed reliability data for each stress. The reliability data section includes the latest data available and may contain some generic data. Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate is related to MTTF by: MTTF = 1/Fr NOTE: MTTF is frequently used interchangeably with MTBF. FITS: 12.6MTTF (YRS): 9048FAILURE RATE: Device Information: Process: 8"-D6H-2P2M,HPVt,TCN1 ALOCOS:GOI Number of Transistors: 172615 Passivation: Passivation w/OxyNitride-Nov. 4% PSG Die Size: 293 x 311 Interconnect: Aluminum / 1% Silicon / 0.5% Copper Gate Oxide Thickness: 150 Å ELECTRICAL CHARACTERIZATION DESCRIPTION READPOINTCONDITION QUANTITY FAILSDATE CODE 1EOS/ESD S5.1 HBM 500 VOLTS 3 0ESD SENSITIVITY PUL'S0336 1EOS/ESD S5.1 HBM 1000 VOLTS 3 0ESD SENSITIVITY PUL'S0336 1EOS/ESD S5.1 HBM 2000 VOLTS 3 0ESD SENSITIVITY PUL'S0336 1EOS/ESD S5.1 HBM 4000 VOLTS 3 0ESD SENSITIVITY PUL'S0336 1EOS/ESD S5.1 HBM 8000 VOLTS 3 3ESD SENSITIVITY PUL'S0336 JESD78, I-TEST 125C 6 0LATCH-UP 0336 JESD78, Vsupply TEST 125C 6 0LATCH-UP 0336 3Total: OPERATING LIFE DESCRIPTION READPOINTCONDITION QUANTITY FAILSDATE CODE 1000125C, 5.25 VOLTS 77 0HIGH TEMP OP LIFE HRS0336 0Total: TEMPERATURE CYCLE DESCRIPTION READPOINTCONDITION QUANTITY FAILSDATE CODE 1000-55C TO 125C 77 0TEMP CYCLE CYS0336 0Total: TEMPERATURE HUMIDITY BIAS DESCRIPTION READPOINTCONDITION QUANTITY FAILSDATE CODE 96130C, 85%R.H.,3.5V 77 0HAST HRS0336

0Total: UNBIASED MOISTURE RESISTANCE DESCRIPTION READPOINTCONDITION QUANTITY FAILSDATE CODE 200130C, 85% R.H. 77 0HAST, NO BIAS HRS0336 0Total: FITS: 12.6MTTF (YRS): 9048FAILURE RATE: