DS17287N-3

DS17285 DALLAS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 38

Technical content

FEATURES

Incorporates industry standard DS1287 PC clock plus enhanced features: /g167 Y2K compliant /g167 +3V or +5V operation /g167 SMI recovery stack /g167 64-bit silicon serial number /g167 Power-control circuitry supports system power-on from date/time alarm or key closure /g167 32kHz output on power-up /g167 Crystal select bit allows RTC to operate with 6pF or 12.5pF crystal /g167 114 bytes user NV RAM /g167 Auxiliary battery input /g167 2kB additional NV RAM /g167 RAM clear input /g167 Century register /g167 Date alarm register /g167 Compatible with existing BIOS for original DS1287 functions /g167 Available as chip (DS17285) or standalone module with embedded battery and crystal (DS17287) /g167 Timekeeping algorithm includes leap-year compensation valid up to 2100 /g167 Underwriters Laboratory (UL) recognized TYPICAL OPERATING CIRCUIT PIN ASSIGNMENT PWR 1 DS17287 24-Pin Encapsulated Package NC AD1 AD3 AD4 AD5 AD6 AD7 GND VCC SQW VBAUX RCLR NC IRQ KS RD NC WR ALE CS NC AD0 AD2 PWR 1 DS17285 24-Pin DIP DS17285S 24-Pin SO AD1 AD3 AD4 AD5 AD6 AD7 GND VCC SQW VBAUX RCLR VBAT IRQ KS RD GND WR ALE CS AD0 AD2 IRQ 1 28 KS VBAT 2 27 RD RCLR 3 26 GND VBAUX 4 25 WR SQW 5 24 ALE VCC 6 23 CS VCC 7 22 GND PWR 8 21 GND X1 9 20 AD7 X2 10 19 AD6 NC 11 18 NC ADO 12 17 AD5 AD1 13 16 AD4 AD2 14 15 AD3 DS17285E 28-Pin TSOP DS17285/DS17287 3V/5V Real-Time Clock www.maxim-ic.com

ORDERING INFORMATION

PART # DESCRIPTION DS17285XX-X RTC Chip DS17287X-X RTC Module; 24-pin DIP PIN DESCRIPTION X1 - Crystal Input X2 - Crystal Output RCLR - RAM Clear Input AD0–AD7 - Multiplexed Address/Data Bus PWR - Power-On Interrupt Output (Open Drain) KS - Kickstart Input CS - RTC Chip-Select Input ALE - RTC Address Strobe WR - RTC Write Data Strobe RD - RTC Read Data Strobe IRQ - Interrupt Request Output (Open Drain) SQW - Square-Wave Output VCC - +3V or +5V Main Supply GND - Ground VBAT - Battery + Supply VBAUX - Auxiliary Battery Supply NC - No Connect

DESCRIPTION

The DS17285/DS17287 are real-time cloc ks (RTCs) designed as successors to the industry standard DS1285, DS1385, DS1485, DS1585, and DS1685 PC real-time clocks. These devices provide the industry standard DS1285 clock function with either +3V or +5V operation. The DS17285 also incorporates a number of enhanced features including a silicon serial number, power-on/off control circuitry, 114 bytes of user NV SRAM plus 2kB of additional NV RAM, and 32.768kHz output for sustaining power management activities. 3 +3V operating rang 5 +5V operating range blank commercial temp range N industrial 3 +3V operating range 5 +5V operating range blank commercial temp range N industrial temp range blank 24-pin DIP E 28- pin TSOP S 24- pin SO

The DS17285/DS17287 power-control circuitry allows th e system to be powered on by an external stimulus such as a keyboard or by a time-and-date (wake-up) alarm. The PWR output pin is triggered by one or either of these events, and is used to turn on an external power supply. The PWR pin is under software control, so that when a task is complete, the system power can then be shut down. The DS17285 is a clock/calendar chip with the features described above . An external crystal and battery are the only components required to maintain time-of-day and memory status in the absence of power. The DS17287 incorporates the DS17285 chip, a 32.768kHz cr ystal, and a lithium battery in a complete, self-contained timekeeping module. The entire unit is fully tested at Dallas Semiconductor such that a minimum of 10 years of timekeeping and data retention in the absence of V CC is guaranteed. OPERATION The block diagram in Figure 1 shows the pin connec tions with the major internal functions of the DS17285/DS17287. The following paragraphs describe the function of each pin. SIGNAL DESCRIPTIONS GND, VCC – DC power is provided to the device on these pins. VCC is the +3V or +5V input. SQW – Square-Wave Output. The SQW pin provides a 32kHz square-wave output, t REC, after a power- up condition has been detected. This condition se ts the following bits, enabling the 32kHz output; DV1 = 1, and E32k = 1. A square wave is output on this pin if either SQWE = 1 or E32k = 1. If E32k = 1, then 32kHz is output regardless of the other contro l bits. If E32k = 0, then the output frequency is dependent on the control bits in register A. Th e SQW pin can output a signal from one of 13 taps provided by the 15 internal divider stages of the RT C. The frequency of the SQW pin can be changed by programming Register A, as shown in Table 2. The SQW signal can be turned on and off using the SQWE bit in register B or the E32k bit in extended register 4Bh. A 32kHz SQW signal is output when the enable 32kHz (E32k) bit in extended register 4Bh is a logic 1 and V CC is above V PF. A 32kHz square wave is also available when V CC is less than V PF if E32k = 1, ABE = 1, and voltage is applied to the VBAUX pin. AD0 to AD7 – Multiplexed Bidirectional Address/Data Bus. Multiplexed buses save pins because address information time and data information time share the same signal paths. The addresses are present during the first portion of the bus cycle and the same pins and signal paths are used for data in the second portion of the cycle. Address/data multiple xing does not slow the access time of the DS17285 since the bus change from address to data occurs during the internal RAM access time. Addresses must be valid prior to the latter portion of ALE, at which time the DS17285/DS 17287 latches the address. Valid write data must be present and held stable during the latter portion of the WR pulse. In a read cycle the DS17285/DS17287 outputs 8 bits of data during the latter portion of the RD pulse. The read cycle is terminated and the bus returns to a high impedance state as RD transitions high. The address/data bus also serves as a bidirectional data path for the external extended RAM. ALE – RTC Address Strobe Input; Active High. A pulse on the address strobe pin serves to demultiplex the bus. The falling edge of ALE causes the RTC address to be latched within the DS17285/DS17287. RD –RTC Read Input; Active Low. RD identifies the time period when the DS17285/DS17287 drives the bus with RTC read data. The RD signal is an enable signal for the output buffers of the clock.

WR – RTC Write Input; Active Low. The WR signal is an active low signal. The WR signal defines the time period during which data is written to the addressed register. CS – RTC Chip-Select Input; Active Low. The chip select signal must be asserted low during a bus cycle for DS17285/DS17287 to be accessed. CS must be kept in the active state during RD and WR timing. Bus cycles that take place with ALE asserted but without asserting CS latches addresses. However, no data transfer occurs. IRQ – Interrupt Request Output; Open Drain, Active Low. The IRQ pin is an active low output of the DS17285/DS17287 that can be tied to the interrupt input of a processor. The IRQ output remains low as long as the status bit causing the interrupt is present and the corresponding interrupt-enable bit is set. To clear the IRQ pin, the application software must clear all enabled flag bits contributing to IRQ ’s active state. When no interrupt conditions are present, the IRQ level is in the high-impedance state. Multiple interrupting devices can be connected to an IRQ bus. The IRQ pin is an open-drain output and requires an external pullup resistor. The voltage on the pullup supply should be no greater than VCC + 0.2V. PWR – Power-On Output; Open-Drain, Active Low. The PWR pin is intended for use as an on/off control for the system power. With V CC voltage removed from the DS17285/DS17287, PWR can be automatically activated from a kickstart input by the KS pin or from a wake-up interrupt. Once the system is powered on, the state of PWR can be controlled by bits in the Dallas registers. The PWR pin can be connected through a pullup resistor to a positive supply. For 5V operation, the voltage of the pullup supply should be no greater than 5.7V. For 3V operation, the voltage on the pullup supply should be no greater than 3.9V. KS – Kickstart Input; Active Low. When VCC is removed from the DS17285/DS17287, the system can be powered on in response to an active low transition on the KS pin, as might be generated from a key closure. VBAUX must be present and auxiliary-battery-enable bit (ABE) must be set to 1 if the kickstart function is used, and the KS pin must be pulled up to the VBAUX supply. While VCC is applied, the KS pin can be used as an interrupt input. RCLR – RAM Clear Input; Active Low. If enabled by software, taking RCLR low results in the clearing of the 114 bytes of user RAM. When enabled, RCLR can be activated whether or not V CC is present. RCLR has an internal pullup and should not be connected to an external pullup resistor. VBAUX – Auxiliary battery input required for kickstart and wake-up features. This input also supports clock/calendar and user RAM if VBAT is at lower voltage or is not present. A standard +3V lithium cell or other energy source can be used. For 3V operation, V BAUX must be held between +2.5V and +3.7V. For 5V operation, VBAUX must be held between +2.5V and +5.2V. If V BAUX is not going to be used it should be grounded and the auxiliary-battery-enable bit bank 1, register 4BH, should = 0. UL recognized to ensure against reverse charging current when used with a lithium battery. See “Conditions of Acceptability” at www.maxim-ic.com/TechSupport/QA/ntrl.htm.

Figure 1. BLOCK DIAGRAM

X1, X2 – Connections for a standard 32.768kHz quartz cr ystal. For greatest accuracy, the DS17285 must be used with a crystal that has a specified load capacitance of either 6pF or 12.5pF. The crystal select (CS) bit in extended-control register 4B is used to select operation with a 6pF or 12.5pF crystal. The crystal is attached directly to the X1 and X2 pins. There is no need for external capacitors or resistors. Note: X1 and X2 are very high-impedance nodes. It is recommended that they and the crystal be guard- ringed with ground and that high frequency signals be kept away from the crystal area. For more information about crystal selection and crystal layout considerations, refer to Application Note 58, “Crystal Considerations with Dallas Real-Time Clocks.” The DS17285 can also be driven by an external 32.768kHz oscillator. In this configuration, the X1 pin is conn ected to the external oscillator signal and the X2 pin is floated. V BAT – Battery input for any standard 3V lithium cell or other energy source. Battery voltage must be held between 2.5V and 3.7V for proper operation. UL recognized to ensure against reverse charging current when used in conjunction with a lithiu m battery. See “Conditions of Acceptability” at www.maxim-ic.com/TechSupport/AQ/ntrl.htm. POWER-DOWN/POWER-UP CONSIDERATIONS The RTC function continues to operate and all of the RAM, time, calendar, and alarm memory locations remain nonvolatile regardless of the level of the V CC input. When V CC is applied to the DS17285/DS17287 and reaches a level of greater than V PF (power-fail trip point), the device becomes accessible after t REC, provided that the oscillator is running and the oscillator countdown chain is not in reset (Register A). This time period allows the system to stabilize after power is applied. The DS17285/DS17287 is available in either a 3V or a 5V device. The 5V device is fully accessible and data can be written and read only when V CC is greater than 4.5V. When VCC is below 4.5V, read and writes are inhibite d. However, the timekeeping function continues unaffected by the lower input voltage. As V CC falls below the greater of V BAT and V BAUX, the RAM and timekeeper are switched over to a lithium battery connected either to the VBAT pin or VBAUX pin. The 3V device is fully accessible and data can be written or read only when V CC is greater than 2.7V. When V CC falls below V PF, access to the device is inhibited. If V PF is less than V BAT and V BAUX, the power supply is switched from VCC to the backup supply (the greater of VBAT and VBAUX) when VCC drops below VPF. If VPF is greater than V BAT and VBAUX, the power supply is switched from V CC to the backup supply when VCC drops below the larger of VBAT and VBAUX. When V CC falls below V PF, the chip is write-protected. With the possible exception of the KS , PWR , RCLR , and SQW pins, all inputs are ignored and all outputs are in a high-impedance state.

1) Registers C and D are read-only. 2) Bit 7 of Register A is read-only. 3) The high order bit of the second byte is read-only. Figure 2. DS17285 REAL-TIME CLOCK ADDRESS MAP The time and calendar information is obtained by reading the appropriate register bytes shown in Table 1. of the time, calendar, and alarm registers can be either binary or binary-coded decimal (BCD) format. bank 1 switching is explained later in this text). mode bit has been written to allow the real-time clock to update the time and calendar bytes.

date alarm as described in Wake-Up/Kickstart. The century counter is discussed later in this text. Table 1. TIME, CALENDAR, AND ALARM DATA MODES

The four control registers; A, B, C, and D reside in both bank 0 and bank 1. These registers are accessible at all times, even during the update cycle. REGISTER A MSB LSB BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 UIP DV2 DV1 DV0 RS3 RS2 RS1 RS0 UIP – Update-in-Progress. The UIP bit is a status flag that can be monitored. When the UIP bit is a 1, the update transfer occurs soon. When UIP is a 0, th e update transfer does not occur for at least 244µs. The time, calendar, and alarm information in RAM is fully available for access when the UIP bit is 0. The UIP bit is read-only. Writing the SET bit in Register B to a 1 inhibits any update transfer and clears the UIP status bit. DV2, DV1, DV0 – These bits are defined as follows: DV2 = Countdown Chain 1 – Resets countdown chain only if DV1 = 1 0 – Countdown chain enabled DV1 = Oscillator Enable 0 – Oscillator off 1 – Oscillator on, V CC power-up state DV0 = Bank Select 0 – Original bank 1 – Extended registers A pattern of 01x is the only combination of bits that turns the oscillator on and allows the RTC to keep time. A pattern of 11x enables the oscillator but holds the countdown chain in reset. The next update occurs at 500ms after a pattern of 01x is written to DV2, DV1, and DV0. RS3, RS2, RS1, RS0 – These four rate-selection bits select one of the 13 taps on the 15-stage divider or disable the divider output. The tap se lected can be used to generate an output square wave (SQW pin) and/or a periodic interrupt. The user can do one of the following: /g167 Enable the interrupt with the PIE bit; /g167 Enable the SQW output pin with the SQWE or E32k bits; /g167 Enable both at the same time and the same rate; or /g167 Enable neither. Table 2 lists the periodic interrupt rates and the square-wave frequencies that can be chosen with the RS bits.

BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 SET PIE AIE UIE SQWE DM 24/12 DSE SET – When the SET bit is a 0, the update transfer f unctions normally by advancing the counts once per second. When the SET bit is written to a 1, any update transfer is inhibited and the program can initialize the time and calendar bytes without an update occurring in the midst of initializing. Read cycles can be executed in a similar manner. SET is a read/write bit that is not modified by internal functions of the DS17285/DS17287. PIE – Periodic Interrupt Enable. The PIE bit is a read/write bit, which allows the periodic interrupt flag (PF) bit in Register C to drive the IRQ pin low. When the PIE bit is set to 1, periodic interrupts are generated by driving the IRQ pin low at a rate specified by the RS3–RS0 bits of Register A. A 0 in the PIE bit blocks the IRQ output from being driven by a periodic interrupt, but the PF bit is still set at the periodic rate. PIE is not modified by any internal DS17285/DS17287 functions. AIE – Alarm Interrupt Enable. The AIE bit is a read/write bit which, when set to a 1, permits the alarm flag (AF) bit in Register C to assert IRQ . An alarm interrupt occurs fo r each second that the three time bytes equal the three alarm bytes, including a “ don’t care” alarm code of binary 11XXXXXX. When the AIE bit is set to 0, the AF bit does not initiate the IRQ signal. The internal functions of the DS17285/DS17287 do not affect the AIE bit. UIE – Update-Ended Interrupt Enable. The UIE bit is a read/write bit that enables the update-end flag (UF) bit in Register C to assert IRQ . The SET bit going high clears the UIE bit. SQWE – Square-Wave Enable. When the SQWE bit is set to a 1 and E32k = 0, a square-wave signal at the frequency set by the rate-selection bits RS3 th rough RS0 is driven out on the SQW pin. When the SQWE bit is set to 0and E32k = 0, the SQW pin is held low. SQWE is a read/write bit. SQWE is set to a 1 when VCC is powered up. DM – Data Mode. The DM bit indicates whether time and calendar information is in binary or BCD format. The DM bit is set by the program to the appropriate format and can be read as required. This bit is not modified by internal functions. A 1 in DM signifies binary data while a 0 in DM specifies BCD data. 24/12 – 24/12-Control Bit. This bit establishes the format of the hours byte. A 1 indicates the 24-hour mode and a 0 indicates the 12-hour mode. This bit is read/write. DSE – Daylight Savings Enable. The DSE bit is a read/write bit that enables two special updates when DSE is set to 1. On the first Sunday in April, the time increments from 1:59:59 AM to 3:00:00 AM. On the last Sunday in October, when the time first reaches 1:59:59 AM, it changes to 1:00:00 AM. These special updates do not occur when the DSE bit is a 0. This bit is not affected by internal functions.

BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 IRQF PF AF UF 0 0 0 0 IRQF – Interrupt Request Flag. This bit is set to a 1 when one or more of the following are true: PF = PIE = 1 WF = WIE= 1 AF = AIE = 1 KF = KSE= 1 UF = UIE = 1 RF = RIE = 1 i.e., IRQF = (PF x PIE) + (AF x AIE) + (UF x UIE) + (WF x WIE) + (KF x KSE) + (RF x RIE) Any time the IRQF bit is a 1, the IRQ pin is driven low. Flag bits PF, AF, and UF are cleared after Register C is read by the program. PF – Periodic Interrupt Flag. This is a read-only bit that is set to a 1 when an edge is detected on the selected tap of the divider chain. Th e RS3 through RS0 bits establish the periodic rate. PF is set to a 1 independent of the state of the PIE bit. When both PF and PIE are 1s, the IRQ signal is active and sets the IRQF bit. The PF bit is cleared by a software read of Register C. AF – Alarm Interrupt Flag. A 1 in the AF bit indicates that the current time has matched the alarm time. If the AIE bit is also a 1, the IRQ pin goes low and a 1 appears in the IRQF bit. A read of Register C clears AF. UF – Update Ended Interrupt Flag. This bit is set after each update cycle. When the UIE bit is set to 1, the 1 in UF causes the IRQF bit to be a 1, which asserts the IRQ pin. UF is cleared by reading Register C. BIT 3 to BIT 0 – These are unused bits of the status Regist er C. These bits always read 0 and cannot be written. REGISTER D MSB LSB BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 V R T 0 000000 VRT – Valid RAM and Time. This bit is a read-only status bit. When VRT = 0, the RTC and RAM data are questionable and indicates that the lithium energy source has been exhausted and should be replaced. This bit indicates that status of the VBAT and VBAUX inputs. BIT 6 to BIT 0 – The remaining bits of Register D are not usable. They cannot be written and, when read, they always read 0.

NV RAM–RTC The general-purpose NV RAM bytes are not dedi cated to any special function within the DS17285/DS17287. They can be used by the applica tion program as nonvolatile memory and are fully available during the update cycle. The user RAM is divided into two separate memory banks. When the bank 0 is selected, the 14 real-time clock registers and 114 bytes of user RAM are accessi ble. When bank 1 is selected, an additional 4kB of user RAM are accessible through the extended RAM address and data registers. INTERRUPT CONTROL The DS17285/DS17287 includes six separate, fully automatic sources of interrupt for a processor: 1) Alarm Interrupt 2) Periodic Interrupt 3) Update-Ended Interrupt 4) Wake-Up Interrupt 5) Kickstart Interrupt 6) RAM Clear Interrupt The conditions that generate each of these independen t interrupt conditions are described in greater detail elsewhere in this data sheet. This section describes the overall control of the interrupts. The application software can select which interrupts, if any, should be used. There are 6 bits including 3 bits in Register B and 3 bits in Extended Register 4B that enable the interrupts. The extended register locations are described later. Writing a logic 1 to an interrupt-enable bit permits that interrupt to be initiated when the event occurs. A logic 0 in the interrupt-enable bit prohibits the IRQ pin from being asserted from that interrupt condition. If an interrupt flag is already set when an interrupt is enabled, IRQ is immediately be set at an active level, even t hough the event initiating the interrupt condition may have occurred much earlier. As a result, there are cases where the software should clear these earlier generated interrupts before first enabling new interrupts. When an interrupt event occurs, the relating flag bit is set to a logic 1 in Register C or in Extended Register 4A. These flag bits are set regardless of th e setting of the corresponding enable bit located either in Register B or in Extended Register 4B. The flag bits can be used in a polling mode without enabling the corresponding enable bits. However, care should be taken when using the flag bits of Register C because they are automatically cleared to 0 immediately after they are read. Double latching is implemented on these bits so that bits that are set remain stable throughout the read cycle. All bits that were set are cleared when read and new interrupts that are pending during the read cycle are held until after the cycle is completed. 1 bit, 2 bits, or 3 bits can be set when reading Register C. Each us ed flag bit should be examined when read to ensure that no interrupts are lost. The flag bits in Extended Register 4A are not automatically cleared following a read. Instead, each flag bit can be cleared to 0 only by writing 0 to that bit. When using the flag bits with fully enabled interrupts, the IRQ line is driven low when an interrupt flag bit is set and its corresponding enable bit is also set. IRQ is held low as long as at least one of the six

possible interrupt sources has its flag and enable bits both set. The IRQF bit in Register C is a 1 whenever the IRQ pin is being driven low as a result of one of the six possible active sources. Therefore, determination that the DS17285/DS17287 initiated an interrupt is accomplished by reading Register C and finding IRQF = 1. IRQF remains set until all enabled interrupt flag bits are cleared to 0. OSCILLATOR CONTROL BITS When the DS17287 is shipped from the factory, the intern al oscillator is turned off. This feature prevents the lithium energy cell from being used until it is installed in a system. A pattern of 01X in bits 4 through 6 of Register A turns the oscillator on and enable the countdown chain. Not that this is different than the dS1287, which required a pattern of 010 in these bits. DV0 is now a “don’t care” because it is used for selection between register banks 0 and 1. A patte rn of 11X turns the oscillator on, but holds the countdown chain of the oscillator in re set. All other combinations of b its 4 through 6 keep the oscillator off. SQUARE-WAVE OUTPUT SELECTION The SQW pin can be programmed to output a vari ety of frequencies divided down from the 32.768kHz crystal tied to X1 and X2. The square-wave output is enabled and disabled through the SQWE bit in Register B or the E32k bit in extended register 4Bh. If the square wave is enabled (SQWE = 1 or E32k = 1), then the output frequency is determined by the settings of the E32k bit in Extended Register 4Bh and by the RS3–0 bits in Register A. If E32k = 1, then a 32.768kHz square wave is output on the SQW pin regardless of the settings of RS3–0 and SQWE. If E32k = 0, then the square-wave output frequency is determined by the RS3–0 bits. These bits control a 1-of-15 decoder that selects one of 13 taps that divide the 32.768kHz frequency. The RS3–0 bits establish the SQW output frequency as shown in Table 2. In addition, RS3–0 bits control the periodic interrupt selection as described below. If E32k = 1, and the auxiliary-battery-enable bit (ABE , bank 1; register 04BH) is enabled, and voltage is applied to V BAUX, then the 32kHz square-wave output signal is output on the SQW pin in the absence of VCC. This facility is provided to clock external power-management circuitry. If any of the above requirements are not met, no square-wave output sign al is generated on the SQW pin in the absence of VCC. PERIODIC INTERRUPT SELECTION The periodic interrupt causes the IRQ pin to go to an active state from once every 500ms to once every 122µs. This function is se parate from the alarm interrupt, whic h can be output from once per second to once per day. The periodic interrupt rate is selected using the same RS3–0 bits in Register A, which select the square-wave frequency (Table 2). Changing the bits affects both the square-wave frequency and the periodic-interrupt output. However, each function has a separate enable bit in Register B. The SQWE and E32k bits control the square-wave output. Similarly, the PIE bit in Register B enables the periodic interrupt. The periodic interrupt can be used with software counters to me asure inputs, create output intervals, or await the next needed software function.

Table 2. PERIODIC INTERRUPT RATE AND SQUARE-WAVE OUTPUT *RS3 to RS0 determine periodic interrupt rates as listed for E32k = 0.

The serialized RTC executes an update cycle once pe r second regardless of the SET bit in Register B. read valid time/calendar data to exceed 244µs. read during the update cycle. Figure 3. UPDATE-ENDED AND PERIODIC INTERRUPT RELATIONSHIP

The extended functions provided by the DS17285/DS 17287 that are new to the RAMified RTC family are accessed by a software-controlled bank-switching scheme, as illustrated in Figure 4. In bank 0, the clock/calendar registers and 50 bytes of user RAM are in the same locations as for the DS1287. As a result, existing routines implemented within BIOS, DOS, or application software packages can gain access to the DS17285/DS17287 clock registers with no changes. Also in bank 0, an extra 64 bytes of RAM are provided at addresses just above the original locations for a total of 114 directly addressable bytes of user RAM. When bank 1 is selected, the clock/calendar registers and the original 50 bytes of user RAM still appear as bank 0. However, the Dallas registers that provide control and status for the extended functions are accessed in place of the additional 64 bytes of user RAM. The major extended functions controlled by the Dallas registers are listed below: /g167 64-bit Silicon Serial Number /g167 Century Counter /g167 RTC Write Counter /g167 Date Alarm /g167 Auxiliary Battery Control/Status /g167 Wake-Up /g167 Kickstart /g167 RAM Clear Control/Status /g167 4kB Extended RAM Access The bank selection is controlled by the state of the DV0 bit in register A. To access bank 0 the DV0 bit should be written to a 0. To access bank 1, DV0 should be written to a 1. Register locations designated as reserved in the bank 1 map are reserved for future use by Dallas Semiconductor. Bits in these locations cannot be written and return a 0 if read. Silicon Serial Number A unique 64-bit lasered serial number is located in bank 1, registers 40h–47h. This serial number is divided into three parts. The first byte in register 40h contains a model number to identify the device type of the DS17285/DS17287. Registers 41h–46h contain a unique binary numbe r. Register 47h contains a CRC byte used to validate the data in registers 40h–46h. All 8 bytes of the serial number are read-only registers. The DS17285/DS17287 is manufactured such that no two devices contain an identical number in locations 41h–47h. Century Counter A register has been added in bank 1, location 48H, to k eep track of centuries. The value is read in either binary or BCD according to the setting of the DM bit. RTC Write Counter An 8-bit counter located in extended register ba nk 1, 5Eh, counts the number of times the RTC is written to. This counter is incremented on the rising edge of the WR signal every time that the CS signal qualifies it. This counter is a read-only register and rolls over after 256 RTC write pulses. This counter

can be used to determine if and how many RTC writes have occurred since the last time this register was read. Auxiliary Battery The V BAUX input is provided to supply power from an auxiliary battery for the DS17285/DS17287 kickstart, wake-up, and SQW output features in the absence of V CC. This power source must be available in order to use these auxiliary features when no VCC is applied to the device. The auxiliary-battery-enable (ABE; bank 1, register 04BH) bit in extended control register 4B is used to turn the auxiliary battery on and off for the above functions in the absence of VCC. When set to a 1, VBAUX battery power is enabled; when cleared to 0, VBAUX battery power is disabled to these functions. In the DS17285/DS17287, this auxiliary battery can be used as the primary backup power source for maintaining the clock/calendar, user RAM, and extended external RAM functions. This occurs if the V BAT pin is at a lower voltage than V BAUX. If the DS17285 is to be backed-up using a single battery with the auxiliary features enabled, then V BAUX should be used and V BAT should be grounded. If V BAUX is not to be used, it should be grounded and ABE should be cleared to 0. Wake-Up/Kickstart The DS17285/DS17287 incorporates a wa ke-up feature that powers on the system at a predetermined date and time through activation of the PWR output pin. In addition, the ki ckstart feature allows the system to be powered up in response to a low-going transition on the KS pin, without operating voltage applied to the V CC pin. As a result, system power can be a pplied upon such events as a key closure or modem-ring-detect signal. In order to use eith er the wake-up or the kickstart features, the DS17285/DS17287 must have an auxiliary battery connected to the V BAUX pin, the oscillator must be running, and the countdown chain must not be in reset (Register A DV2, DV1, DV0 = 01X). If DV2, DV1, and DV0 are not in this required state, the PWR pin is not driven low in response to a kickstart or wake-up condition, while in battery-backed mode. The wake-up feature is controlled through the wake- up-interrupt-enable bit in extended control register 4B (WIE, bank 1, 04BH). Setting WIE to 1 enables the wake-up feature, clearing WIE to 0 disables it. Similarly, the kickstart feature is controlled by the kickstart-interrupt-enable bit in extended control register 4B (KSE, bank 1, 04BH). A wake-up sequence occurs as follows: When wake- up is enabled through WIE = 1 while the system is powered down (no V CC voltage), the clock/calendar monitors the current date for a match condition with the date alarm register (bank 1, register 049H). W ith the date alarm register, the hours, minutes, and seconds alarm bytes in the clock/calendar register map (bank 0, registers 05H, 03H, and 01H) are also monitored. As a result, a wake-up occurs at the date and time specified by the date, hours, minutes, and seconds alarm register values. This additional alarm occurs regardless of the programming of the AIE bit (bank 0, register B, 0BH). When the match condition occurs, the PWR pin is automatically driven low. This output can be used to turn on the main system power supply that provides V CC voltage to the DS17285/DS17287 as well as the other ma jor components in the system. Also at this time, the wake-up flag (WF, bank 1, register 04AH) is set, indicating that a wake-up condition has occurred.

A kickstart sequence occurs when kickstarting is enabled through KSE = 1. While the system is powered down, the KS input pin is monitored for a low-going transition of minimum pulse width tKSPW. When such a transition is detected, the PWR line is pulled low, as it is for a wake-up condition. Also at this time, the kickstart Flag (KF, bank 1, register 04AH) is set, indicating that a kickstart condition has occurred. The timing associated with both the wake-up and kickstarting sequences is illustrated in the Wake-Up/Kickstart Timing Diagram in the Electrical Specifications section of this data sheet. The timing associated with these functions is divided into five intervals, labeled 1 to 5 on the diagram. The occurrence of either a kickstart or wake-up condition causes the PWR pin to be driven low, as described above. During interval 1, if the supply voltage on the DS17285/DS17287 V CC pin rises above the greater of V BAT or VPF before the power-on timeout period (t POTO) expires, then PWR remains at the active low level. If V CC does not rise above the greater of V BAT or VPF in this time, then the PWR output pin is turned off and returns to its high-impedance level. In this event, the IRQ pin also remains tri-stated. The interrupt flag bit (either WF or KF) associat ed with the attempted power-on sequence remains set until cleared by software during a subsequent system power-on. If VCC is applied within the timeout period, then the system power-on sequence continue as shown in intervals 2 to 5 in the timing diagram. During interval 2, PWR remains active and IRQ is driven to its active low level, indicating that either WF or KF was set in initiating the power-on. In the diagram KS is assumed to be pulled up to the V BAUX supply. Also at this time, the PAB bit is automatically cleared to 0 in response to a successful power-on. The PWR line remains active as long as the PAB remains cleared to At the beginning of interval 3, the system proce ssor has begun code execution and clears the interrupt condition of WF and/or KF by writing 0’s to both of these control bits. As long as no other interrupt within the DS17285/DS17287 is pending, the IRQ line is taken inactive once these bits are reset. Execution of the application software can proceed. During this time, both the wake-up and kickstart functions can be used to generate status and interrupts. WF is set in response to a date, hours, minutes, and seconds match condition. KF is set in response to a low-going transition on KS . If the associated interrupt-enable bit is set (WIE and/or KSE), then the IRQ line is driven active low in response to enabled event. In addition, the other possible interrupt sources within the DS17285/DS17287 can cause IRQ to be driven low. While system power is applied, the on-chip logic always attempts to drive the PWR pin active in response to the enabled kickstart or wake-up condition. This is true even if PWR was previously inactive as the result of power being applied by some means other than wake-up or kickstart. The system can be powered down under software control by setting the PAB bit to a logic 1. This causes the open-drain PWR pin to be placed in a high-impedance state, as shown at the beginning of interval 4 in the timing diagram. As VCC voltage decays, the IRQ output pin is placed in a high-impedance state when VCC goes below VPF. If the system is to be again powered on in response to a wake-up or kickstart, then the both the WF and KF flags should be cleared and WIE and/or KSE should be enabled prior to setting the PAB bit.

During interval 5, the system is fully powered down. Battery backup of the clock calendar and NV RAM is in effect and IRQ is tri-stated, and monitoring of wake-up and kickstart takes place. If PRS = 1, PWR stays active; otherwise, if PRS = 0 PWR is tri-stated. RAM Clear The DS17285/DS17287 provides a RAM clea r function for the 114 bytes of user RAM. When enabled, this function can be performed regardless of the condition of the VCC pin. The RAM clear function is enabled or disabled th rough the RAM clear-enable bit (RCE; bank 1, register 04BH). When this bit is set to a logic 1, the 114 bytes of user RAM is cleared (all bits set to 1) when an active low transition is sensed on the RCLR pin. This action has no affect on either the clock/calendar settings or upon the contents of the extended RAM. The RAM clear flag (RF, bank 1, register 04AH) is set when the RAM clear operation has been completed. If VCC is present at the time of the RAM clear and RIE = 1, the IRQ line is also be driven low upon completi on. The interrupt condition can be cleared by writing a 0 to the RF bit. The IRQ line then returns to its inactive high level provided there are no other pending interrupts. Once the RCLR pin is activated, all read/write accesses are locked out for a minimum recover time, specified as tREC in Electrical Characteristics. When RCE is cleared to 0, the RAM clear function is disabled. The state of the RCLR pin has no affect on the contents of the user RAM, and transitions on the RCLR pin have no affect on RF. 4k x 8 Extended RAM The DS17285/DS17287 provides 4k x 8 of on-chip SRAM that is controlled as nonvolatile storage sustained from a lithium battery. On power-up, the RAM is taken out of write-protect status by the internal power-OK signal (POK) generated from the write-protect circuitry. The on-chip 4k x 8 NV SRAM is accessed through the eight multiplexed address/data lines AD7 to AD0. Access to the SRAM is controlled by three on-chip latch re gisters. Two registers are used to hold the SRAM address, and the other register is used to hold read/write data. The SRAM address space is from 00h to 0FFFh. Access to the extended 4k x 8 RAM is controlled by th ree of the Dallas registers shown in Figure 4. The Dallas registers in bank 1 must first be selected by setting the DV0 bit in register A to a logic 1. The 12- bit address of the RAM location to be accessed must be loaded into the extended RAM address registers located at 50h and 51h. The least significant address byte should be written to location 50h, and the most significant 4-bits (right-justified) should be loaded in location 51h. Data in the addressed location can be read by performing a read operation from location 53h, or written to by performing a write operation to location 53h. Data in any a ddressed location can be read or writte n repeatedly without changing the address in location 50h and 51h. To read or write consecutive extended RAM locations, a burst mode feature can be enabled to increment the extended RAM address. To enable the burst mode feature, set the BME bit in the extended control register 4Ah, to a logic 1. With burst mode enabled, write the extended RAM starting address location to registers 50h and 51h. Then read or write the exte nded RAM data from/to re gister 53h. The extended RAM address locations are automatically incremented on the rising edge of RD or WR only when register 53h is being accessed. Refer to the Burst Mode Timing Waveform.

Figure 4. DS17285/DS17287 EXTENDED REGISTER BANK DEFINITION

47 CRC BYTE

48 CENTURY BYTE

49 DATE ALARM

50 EXTENDED RAM ADDR - LSB EXTENDED

64 BYTES - USER RAM 51 EXTENDED RAM ADDR - MSB RAM

52 RESERVED 2k X 8

53 EXTENDED RAM DATA PORT

54 RESERVED

55 RESERVED

56 RESERVED

57 RESERVED

58 RESERVED

59 RESERVED

50 BYTES - USER RAM

EXTENDED CONTROL REGISTERS Two extended control registers are provided to supply controls and st atus information for the extended features offered by the DS17285/DS17287. These are designated as extended control registers 4A and 4B and are located in register bank 1, locations 04AH and 04BH, respectively. The functions of the bits within these registers are described as follows. EXTENDED CONTROL REGISTER 4A MSB LSB BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 VRT2 INCR BME * PAB RF WF KF VRT2 – Valid RAM and Time 2. This status bit gives the condition of the auxiliary batter. It is set to a logic 1 condition when the external lithium battery is connected to the VBAUX. If this bit is read as a logivc 0, the external battery should be replaced. INCR – Increment in Progress Status. This bit is set to a 1 when an increment to the time/date registers is in progress and the alarm checks are being made. INCR is set to a 1 at 122µs before the update cycle starts and is cleared to 0 at the end of each update cycle. BME – Burst Mode Enable. The burst mode enable bit allows th e extended user RAM address registers to automatically increment for consecutive reads and writes. When BME is set to a logic 1, the automatic incrementing is enabled and when BME is set to a logic 0, the automatic incrementing is disabled. PAB – Power-Active Bar-Control. When this bit is 0, the PWR pin is in the active low state. When this bit is 1, the PWR pin is in the high-impedance state. This bit can be written to a logic 1 or 0 by the user. If either WF and WIE = 1 or KF and KSE = 1, the PAB bit is cleared to 0. RF – Ram Clear Flag. This bit is set to a logic 1 when a high-to-low transition occurs on the RCLR input if RCE = 1. The RF bit is cleared by writing it to a logic 0. This bit can also be written to a logic 1 to force an interrupt condition. WF – Wake-Up Alarm Flag. This bit is set to 1 when a wake-up alarm condition occurs or when the user writes it to a 1. WF is cleared by writing it to a 0. KF – Kickstart Flag. This bit is set to a 1 when a kickstart condition occurs or when the user writes it to a 1. This bit is cleared by writing it to a logic 0. *Reserved bits. These bits are reserved for future use by Dallas Semiconductor. They can be read and written, but have no affect on operation.

EXTENDED CONTROL REGISTER 4B MSB LSB BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 ABE E32k CS RCE PRS RIE WIE KSE ABE – Auxiliary Battery Enable. This bit when written to a logic 1 enables the V BAUX pin for extended functions. E32k – Enable 32.768kHz Output. This bit when written to a logic 1 enables the 32.768kHz oscillator frequency to be output on the SQW pin. E32k is set to a 1 when VCC is powered up. CS – Crystal Select. When CS is set to a 0, the oscillator is configured for operation with a crystal that has a 6pF specified load capacitance. When CS = 1, the oscillator is configured for a 12.5pF crystal. CS is disabled in the DS17287 module and should be set to CS = 0. RCE – RAM Clear Enable. When set to a 1, this bit enables a low level on RCLR to clear all 114 bytes of user RAM. When RCE = 0, RCLR and the RAM clear function are disabled. PRS – PAB Reset Select. When set to a 0, the PWR pin is set high-z when the DS17285 goes into power fail. When set to a 1, the PWR pin remains active upon entering power fail. RIE – RAM Clear Interrupt Enable. When RIE is set to a 1, the IRQ pin is driven low when a RAM clear function is completed. WIE – Wake-up Alarm Interrupt Enable. When VCC voltage is absent and WIE is set to a 1, the PWR pin is driven active low when a wake-up condition occurs, causing the WF bit to be set to 1. When V CC is then applied, the IRQ pin is also driven low. If WIE is set while system power is applied, both IRQ and PWR are driven low in response to WF being set to 1. When WIE is cleared to a 0, the WF bit has no affect on the PWR or IRQ pins. KSE – Kickstart Interrupt Enable. When VCC voltage is absent and KSE is set to a 1, the PWR pin is driven active low when a kickstart condition occurs ( KS pulsed low), causing the KF bit to be set to 1. When V CC is then applied, the IRQ pin is also driven low. If KSE is set to 1 while system power is applied, both IRQ and PWR are driven low in response to KF bein g set to 1. When KSE is cleared to a 0, the KF bit has no affect on the PWR or IRQ pins.

SYSTEM MAINTENANCE INTERRUPT (SMI) RECOVERY STACK An SMI recovery register stack is located in th e extended register bank, locations 4Eh and 4Fh. This register stack, shown below, can be used by the BI OS to recover from an SMI occurring during an RTC read or write. The RTC address is latched on the falling edge of the ALE signal. Each time an RTC address is latched, the register address stack is pushed. The stack is only four registers deep, holding the three previous RTC addresses in addition to the current RTC address being accessed. The following waveform illustrates how the BIOS could recover the RTC address when an SMI occurs. 1) The RTC address is latched. 2) An SMI is generated before an RTC read or write occurs. 3) RTC address 0Ah is latched and the address from 1 is pushed to the “RTC Address–1” stack location. This step is necessary to change the bank select bit, DV0 = 1. 4) RTC address 4Eh is latc hed and the address from 1 is pushe d to location 4Eh, “RTC Address–2” while 0Ah is pushed to the “RTC Address–1” loca tion. The data in this register, 4Eh, is the RTC address lost due to the SMI.

ABSOLUTE MAXIMUM RATINGS* Voltage Range on Any Pin Relative to Ground -0.3V to +7.0V Storage Temperature Range -40°C to +85°C Soldering Temperature Range +260 /g176C for 10 seconds (DIP) (Note 13) See IPC/JEDEC Standard J-STD-020A for Surface Mount Devices * This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time can affect reliability. OPERATING RANGE RANGE TEMP. RANGE (°C) V CC Commercial 0 to +70 3V /g17710% or 5V /g17710% Industrial -40 to +85 3V /g17710% or 5V /g17710% RECOMMENDED DC OPERATING CONDITIONS Over the operating range PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Power Supply Voltage 5V Operation VCC 4.5 5.0 5.5 V Power Supply Voltage 3V Operation VCC 2.7 3.0 3.7 V Input Logic 1 5V ±10% 3V ±10% VIH 2.2 2.0 VCC + 0.3 V Input Logic 0 V IL -0.3 0.6 V Battery Voltage V BAT 2.5 3.7 V Auxiliary Battery Voltage; VCC = 5.0V VBAUX 2.5 5.2 V Auxiliary Battery Voltage; VCC = 3.0V VBAUX 2.5 3.7 V

DC ELECTRICAL CHARACTERISTICS Over the operating range (5V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Average VCC Power Supply Current ICC1 25 50 mA 1, 2 CMOS Standby Current ( CS = VCC - 0.2V) ICC2 1 3 mA 1, 2 Input Leakage Current (Any Input) IIL -1 +1 /g109A Output Leakage Current I OL -1 +1 /g109A 5 Output Logic 1 Voltage (IOUT = -1.0mA) VOH 2.4 V Output Logic 0 Voltage (IOUT = -2.1mA) VOL 0.4 V Power-Fail Trip Point V PF 4.25 4.37 4.5 V 3 Battery-Switch Voltage V SW VBAT, VBAUX Battery Leakage OSC ON I BAT1 0.50 0.7 /g109A 11 Battery Leakage OSC OFF I BAT2 0.050 0.4 /g109A 11 I/O Leakage I LO -1 +1 /g109A 4 PWR Output at 0.4V IOLPWR 10.0 mA IRQ Output at 0.4V IOLIRQ 2.1 mA

DC ELECTRICAL CHARACTERISTICS Over the operating range (3V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Average VCC Power-Supply Current ICC1 15 30 mA 1, 2 CMOS Standby Current ( CS = VCC - 0.2V) ICC2 0.5 2 mA 1, 2 Input Leakage Current (Any Input) IIL -1 +1 /g109A Output Leakage Current I OL -1 +1 /g109A 5 Output Logic 1 Voltage at -0.6mA VOH 2.4 V Output Logic 0 Voltage at +1.2mA VOL 0.4 V Power-Fail Trip Point V PF 2.5 2.6 2.7 V 3 Battery Leakage OSC ON I BAT1 0.50 0.7 /g109A 11 Battery Leakage OSC OFF I BAT2 0.050 0.4 /g109A 11 I/O Leakage I LO -1 +1 /g109A 4 PWR Output at 0.4V IOLPWR 4m A IRQ Output at 0.4V IOLIRQ 0.8 mA CRYSTAL SPECIFICATIONS* PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Nominal Frequency F O 32.768 kHz Series Resistance ESR 45 k Ω Load Capacitance C L 6 or 12.5 pF *The crystal, traces, and crystal input pins should be isolated from RF generating signals. Refer to Application Note 58, “Crystal Considerations for Dallas Real-Time Clocks” for additional specification.

RTC AC TIMING CHARACTERISTICS Over the operating range (3V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Cycle Time t CYC 360 DC ns Pulse-Width, RD / WR Low PWRWL 200 ns Pulse-Width, RD / WR High PWRWH 150 ns Input Rise and Fall t R, tF 30 ns Chip-Select Setup Time Before WR or RD tCS 20 ns Chip-Select Hold Time t CH 0n s Read Data Hold Time t DHR 10 90 ns Write Data Hold Time t DHW 0n s Muxed Address Valid Time to ALE Fall tASL 40 ns Muxed Address Hold Time to ALE Fall tAHL 10 ns RD or WR High Setup to ALE Rise tASD 30 ns Pulse-Width ALE High PW ASH 40 ns ALE Low Setup to RD or WR Fall tASED 30 ns Output Data-Delay Time from RD tDDR 20 200 ns 6 Data Setup Time t DSW 70 ns IRQ Release from RD tIRD 2 /g109s AC TEST CONDITIONS Output Load: 50pF Input Pulse Levels: 0V to 3.0V Timing Measurement Reference Levels Input: 1.5V Output: 1.5V Input Pulse Rise and Fall Times: 5ns

RTC AC TIMING CHARACTERISTICS Over the operating range (5V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Cycle Time t CYC 240 DC ns Pulse-Width, RD / WR Low PWRWL 120 ns Pulse-Width, RD / WR High PWRWH 80 ns Input Rise and Fall Time t R, tF 30 ns Chip-Select Setup Time before WR or RD tCS 20 ns Chip-Select Hold Time t CH 0n s Read Data Hold Time t DHR 10 50 ns Write Data Hold Time t DHW 0n s Muxed Address Valid Time to ALE Fall tASL 20 ns Muxed Address Hold Time to ALE fall tAHL 10 ns RD or WR High Setup to ALE Rise tASD 25 ns Pulse-Width ALE High PW ASH 40 ns ALE Low Setup to RD or WR Fall tASED 30 ns Output Data-Delay Time from RD tDDR 20 120 ns 6 Data Setup Time t DSW 30 ns IRQ Release from RD tIRD 2 /g109s AC TEST CONDITIONS Output Load: 50pF Input Pulse Levels: 0V to 3.0V Timing Measurement Reference Levels Input: 1.5V Output: 1.5V Input Pulse Rise and Fall Times: 5ns

BUS TIMING FOR READ CYCLE TO RTC AND RTC REGISTERS BUS TIMING FOR WRITE CYCLE TO RTC AND RTC REGISTERS

POWER-UP/POWER-DOWN TIMING, 5V (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CS High to Power-Fail tPF 0n s Recovery at Power-Up t REC 150 ms VCC Slew Rate Power-Down tF 4.0 /g163VCC /g1634.5V 300 /g109s VCC Slew Rate Power-Down tFB 3.0 /g163VCC /g1634.0V 10 /g109s VCC Slew Rate Power-Up tR 4.5 /g179VCC /g1794.0V 0 /g109s Expected Data Retention t DR 10 years 9, 10 POWER-UP/POWER-DOWN TIMING, 3V (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CS High to Power-Fail tPF 0n s Recovery at Power-Up t REC 150 ms VCC Slew Rate Power-Down tF 2.5 /g163VCC /g1633.0V 300 /g109s VCC Slew Rate Power-Up tR 3.0 /g179VCC /g1792.5V 0 /g109s Expected Data Retention t DR 10 years 9, 10 Warning: Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery back-up mode. CAPACITANCE (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance C IN 12 pF Output Capacitance C OUT 12 pF WAKE-UP/KICKSTART TIMING (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Kickstart-Input Pulse-Width t KSPW 2 /g109s Wake-up/Kickstart Power-On Timeout tPOTO 2s 7

POWER-UP CONDITION, 3V POWER-DOWN CONDITION, 3V

POWER-UP CONDITION, 5V POWER-DOWN CONDITION, 5V

Note: Time intervals shown above are referenced in Wake-Up/Kickstart section. *This condition can occur with the 3V device.

BURST MODE TIMING WAVEFORM NOTES: 1) Typical values are at +25°C and nominal supplies. 2) Outputs are open. 3) Write-protection trip point occurs during power-fail prior to switchover from VCC to VBAT. 4) Applies to the AD0 to AD7 pins, and the SQW pin when each is in a high-impedance state. 5) The IRQ and PWR pins are open-drain. 6) Measured with a load of 50pF + 1 TTL gate. 7) Wake-up kickstart timeout generate d only when the oscillator is enabled and the countdown chain is not reset. 8) VSW is determined by the larger of VBAT and VBAUX. 9) The DS17287 keeps time to an accuracy of ±1 minut e per month during data retention time for the period of tDR. 10) tDR is the amount of time that the internal battery can power the internal oscillator and internal registers of the DS17287. 11) IBAT1 and I BAT2 are measured at V BAT = 3.5V, with a 32.768kHz crystal attached to X1 and X2 (DS17285). 12) RTC modules can be successfully processed through conventional wave-soldering techniques as long as temperature exposure to the lithium energy sour ce contained within does not exceed +85°C. Post- solder cleaning with water-washing techniques is a cceptable, provided that ultrasonic vibration is not used.

1.245 31.62 1.270 32.25 B IN MM 0.530 13.46 0.550 13.97 C IN MM 0.140 3.56 0.160 4.06 D IN MM 0.600 15.24 0.625 15.88 E IN MM 0.015 0.380 0.050 1.27 F IN MM 0.120 3.05 0.145 3.68 G IN MM 0.090 2.29 0.110 2.79 H IN MM 0.625 15.88 0.675 17.15 J IN MM 0.008 0.20 0.012 0.30 K IN MM 0.015 0.38 0.022 0.56

The chamfer on the body is optional. If it is not present, a terminal 1 identifier must be positioned so that one-half or more of its area is contained in the hatched zone. PKG 24-PIN DIM MIN MAX A IN MM 0.094 2.38 0.105 2.68 A1 IN MM 0.004 0.102 0.012 0.30 A2 IN MM 0.089 2.26 0.095 2.41 b IN MM 0.013 0.33 0.020 0.51 C IN MM 0.009 0.229 0.013 0.33 D IN MM 0.598 15.19 0.612 15.54 e IN MM

0.050 BSC

1.27 BSC

0.290 7.37 0.300 7.62 H IN MM 0.398 10.11 0.416 10.57 L IN MM 0.016 0.40 0.040 1.02 Θ 0° 8°

A —1 . 2 0 A1 0.05 — A2 0.91 1.02 b 0.18 0.27 c 0.15 0.20 D 13.20 13.60 D1 11.70 11.90 E 7.90 8.10 e 0.55 BSC L 0.30 0.70 L1 0.80 BSC 56-G5003-000

Note: Pins 2, 3, 16, and 20 are missing by design. PKG 24-PIN DIM MIN MAX A IN MM 1.320 33.53 1.335 33.91 B IN MM 0.720 18.29 0.740 18.80 C IN MM 0.345 8.76 0.370 9.40 D IN MM 0.100 2.54 0.130 3.30 E IN MM 0.015 0.38 0.030 0.76 F IN MM 0.100 2.79 0.140 3.56 G IN MM 0.090 2.29 0.110 2.79 H IN MM 0.590 14.99 0.630 16.00 J IN MM 0.008 0.20 0.012 0.30 K IN MM 0.015 0.38 0.021 0.53