DRA8 SANYO | Alldatasheet

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Features

  • Glass passivation for high reliability - Peak OFF-state (reverse) voltage : — 100 to — 600V - Average ON-state current : 8A + TO-220 package - Weight : 2g Repetitive Peak OFF-State Voltage Vprm 100 200 400 600 V Non-Repetitive Peak Vrsm -150 -300 -500 -700 V Reverse Voltage Repetitive Peak Reverse Voltage VrrM -100 -200 -400 -600 V Average ON-State Current Iqav) Te=83°C, > > > 8 A single-phase half-wave RMS ON-State Current Inems) > > > 126 A Surge ON-State Current Ips Sine half-wave > > > 120 A 1cycle, 50Hz Amperes Squared-Seconds Sir?-dt > > > 70 A2S Peak Gate Power Dissipation Pom > > > 5 OW Average Gate Power Dissipation Pay) ad > > 05 W Peak Gate Forward Current Ipgm > > > 2 A Peak Gate Forward Voltage Vrom > > > 10 Vv Peak Gate Reverse Voltage Vrem > > > 5 OV Junction Temperature Tj > > > 125 °C Storage Temperature Tstg > > —40to +125 °C Electrical Characteristics at Ta= 25°C min typ max unit Repetitive Peak OFF-State Current IprM Tj=125°C, Vp=Vprm 2 mA Repetitive Peak Reverse Current Inrm Tj=125°C,Vp= Vrru 2 mA ON-State Voltage Vr Tp=25A 1.6 v Critical Rate of Rise of dv/dt. Te=125°C, Vp =2/3VpRM 30 Vius OFF-State Voltage Holding Current lu R_=1002 60 mA Gate Trigger Current Igr Vp=6V,Ry =102 40 mA Gate Trigger Voltage Vor Vp=6V,Ry=102 1.5 v Gate Nontrigger Voltage Veo Ta=125°C,Vp=2/3Vprm 0.2 Vv Thermal] Resistance Rth(j-c) 3 °C/W Package Dimensions 1104 (unit: mm ) 18.3 ate 1 4 Afolc 3 A

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  • A, Anode Cc. Cathode SANYO Electric Co.,Ltd: Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 2289TA/5295K1,TS No.820-1/3

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DRAS& RAB : Te!- TlAV) Te = Tr(av) ao “ eet HHA || OMY, 10 ed—| LA. weet MGMG) . 2 | ISS ow | SSS a a” YS SS 3 LL DATSSRS TT BL OL SSSN Tog. Nt SSN ee a ee ee a g He ie eeeeeinl LT EET TE}? ETT TF °s 2 ry 6 e 10 °F 2 4 6 8 10 Ww * Average ON-State Current,lgjay) — A Average ON-State Currentlyjqy, — A IeT - Te VET - Te » = 2.0 VR= SPREE] Ea eg = OE PONCEEPT TT COC pOOSRREEEE pBRSCECHS Os OO SCOPE ocooce Por oI Tit tT Tt yy | i. | tf! ] | I 4 re) 0 0 wo 1D 160 pry ° 40 Ly 120 1 Case Temperature,Te — °C Case Temperature,Tc — °C i In - Te zy Rth(j-c) - t ee Bie a a CH PCE Payee 1 +. si PP PPP § UA PREECECCA HHA ae = FLEET ER) & Al eee} fy BEES POE 2 tt A ee 40 Oo. 40 80 120 E 3 2 10! Ww? »! Case 'Temperature,Te ~ °C. & Time,t -—s No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiiates, subsidiaries and distributors or any of . their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, I No.820-3/3