DMS935E1 PANASONIC | Alldatasheet
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Ver. BED This product complies with the RoHS Directive (EU 2002/95/EC). Publication date: December 2010 1 DMS935E1 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Basic Part Number DSC2G03 + CCD load device (Individual) Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Tr1 Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 50 mA CCD load device Limiting element voltage Vmax 40 V Limiting element current Imax 10 mA Overall Total power dissipation * PT 125 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm Electrical Characteristics Ta = 25°C±3°C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0 30 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V Base-emitter voltage VBE VCE = 10 V, IC = 2 mA 740 mV Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 100 250 Transition frequency fT VCE = 10 V, IC = 15 mA 1 300 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement CCD load device Parameter Symbol Conditions Min Typ Max Unit Pinchi off current IP VDS = 10 V, VG = 0 3.8 5.2 mA Output impedance ZO VDS = 10 V, VG = 0 0.05 mW Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Package Code SSMini6-F3-B Pin Name 1: Emitter 4: Source 2: Base 5: Drain 3: Gate 6: Collector Marking Symbol: X0 Internal Connection Tr FET (E) (B) (G) (S) (C) (D)
Ver. BED This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E1 PT Ta 0 20016040 12080 100 150 125 DMS935E1_PT-Ta Ambient temperature Ta (°C) Total power dissipation PT (mW) IC VCE hFE IC VCE(sat) IC 0 122 104 8 6 Collector current IC (mA) Collector-emitter voltage VCE (V) DMS935E1(Tr1)_IC-VCE Ta = 25°C IB = 950 µA 350 µA 450 µA550 µA 650 µA750 µA 850 µA 250 µA 150 µA 50 µA 10−1 500 300 400 200 100 1 1 0 1 02 Forward current transfer ratio hFE Collector current IC (mA) DMS935E1(Tr1)_hFE-IC 25°C −30°C Ta = 85°C VCE = 10 V 10−2 10−1 10−1 1 1 0 1 02 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) DMS935E1(Tr1)_VCEsat-IC 25°C −30°C Ta = 85°C IC / IB = 30 Common characteristics chart Characteristics charts of Tr IC VBE Cob VCB fT IC 00 1.20.80.4 DMS935E1(Tr1)_IC-VBE Base-emitter voltage VBE (V) Collector current IC (mA) 25°C −30°C Ta = 85°C VO = 10 V 3.0 2.5 2.0 1.5 1.0 0.5 10 100 DMS935E1(Tr1)_Cob-VCB Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) IE = 0 f = 1 MHz Ta = 25°C 10−1 2 000 1 500 1 000 500 1 1 0 1 02 DMS935E1(Tr1)_fT-IC Transition frequency fT (MHz) Collector current IC (mA) VCE = 10 V Ta = 25°C
Ver. BED This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E1 IP VDS 0 5 25 3010 2015 Pinchi off current IP (mA) Drain-source voltage VDS (V) DMS935E1(CCD)_IP-VDS Ta = 25°C Characteristics charts of CCD
Ver. BED This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E1 SSMini6-F3-B Unit: mm 1.60 ±0.05 0.20 +0.05 −0.02 6 5 4 1 2 3 1.60 ±0.05 1.20 ±0.05 1.00 ±0.05 (0.5) (0.5) (5°) 0.55 ±0.05 0 to 0.05 (0.27) 0.13 +0.05 −0.02 (5°) 0.20 ±0.05
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