DMG20402 PANASONIC | Alldatasheet
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Ver. BEDPublication date: February 2013 1 DMG20402 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B7 Basic Part Number DSC2002 + DSA2002 (Individual) Packaging DMG204020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Tr1 Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A Tr2 Collector-base voltage (Emitter open) VCBO –60 V Collector-emitter voltage (Base open) VCEO –50 V Emitter-base voltage (Collector open) VEBO –5 V Collector current IC –500 mA Peak collector current ICP –1 A Overall Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Unit: mm 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) Panasonic Mini6-G4-B JEITA SC-74 Code SOT-457 Tr1 Tr2 (E1) (B1) (C2) (E2) (C1) (B2)
Ver. BED DMG20402 Electrical Characteristics Ta = 25°C±3°C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Forward current transfer ratio *1 hFE1 VCE = 10 V, IC = 150 mA 120 340 hFE2 VCE = 10 V, IC = 500 mA 40 Collector-emitter saturation voltage *1 VCE(sat) IC = 300 mA, IB = 30 mA 0.1 0.6 V Transition frequency fT VCE = 10 V, IC = 50 mA 160 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 4.8 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –60 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Emitter-base voltage (Collector open) VEBO IE = –10 µA, IC = 0 –5 V Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 µA Forward current transfer ratio *1 hFE1 VCE = –10 V, IC = –150 mA 120 340 hFE1 VCE = –10 V, IC = –500 mA 40 Collector-emitter saturation voltage *1 VCE(sat) IC = –300 mA, IB = –30 mA – 0.2 – 0.6 V Base-emitter saturation voltage *1 VBE(sat) IC = –300 mA, IB = –30 mA – 0.9 –1.5 V Transition frequency fT VCE = –10 V, IC = –50 mA 130 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = –10 V, IE = 0, f = 1 MHz 7.3 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement
Ver. BED DMG20402 IC VCE hFE IC VCE(sat) IC 0 122 104 8 6 600 500 400 300 200 100 DMG20402(Tr1)_IC-VCE Collector current IC (mA) Collector-emitter voltage VCE (V) Ta = 25°C IB = 3.0 mA 0.3 mA 0.6 mA 0.9 mA 1.2 mA 1.5 mA 1.8 mA 2.1 mA 2.4 mA 2.7 mA 300 250 200 150 100 10 100 1 000 DMG20402(Tr1)_hFE-IC Forward current transfer ratio hFE Collector current IC (mA) −30°C Ta = 85°C VCE = 10 V 25°C 0.01 0.1 10 100 1 000 DMG20402(Tr1)_VCEsat-IC Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −30°C Ta = 85°C IC / IB = 10 25°C IC VBE Cob VCB fT IC 0 1.20.4 0.8 500 100 200 300 400 DMG20402(Tr1)_IC-VBE Collector current IC (mA) Base-emitter voltage VBE (V) −30°C 25°C Ta = 85°C VCE = 10 V 10 100 DMG20402(Tr1)_Cob-VCB Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) IE = 0 f = 1 MHz Ta = 25°C 0.1 250 200 150 100 1 1 0 100 DMG20402(Tr1)_fT-IC Transition frequency fT (MHz) Collector current IC (mA) VCE = 10 V Ta = 25°C Characteristics charts of Tr1 PT Ta 0 20016040 12080 200 100 400 300 DMG20402_PT-Ta Total power dissipation PT (mW) Ambient temperature Ta (°C) Common characteristics chart
Ver. BED DMG20402 IC VBE Cob VCB fT IC 0 −1.2− 0.4 − 0.8 −600 −500 −400 −300 −200 −100 DMG20402(Tr2)_IC-VBE Collector current IC (mA) Base-emitter voltage VBE (V) −30°C 25°C Ta = 85°C VCE = −10 V −10 −100 DMG20402(Tr2)_Cob-VCB Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) IE = 0 f = 1 MHz Ta = 25°C − 0.1 200 160 120 −1 −10 −100 DMG20402(Tr2)_fT-IC Transition frequency fT (MHz) Collector current IC (mA) VCE = −10 V Ta = 25°C IC VCE hFE IC VCE(sat) IC −100 −80 −60 −40 −20 DMG20402(Tr2)_IC-VCE Collector current IC (mA) Collector-emitter voltage VCE (V) Ta = 25°C IB = −500 µA −400 µA −300 µA −200 µA −100 µA 300 250 200 150 100 −10 −100 −1 000 DMG20402(Tr2)_hFE-IC Forward current transfer ratio hFE Collector current IC (mA) −30°C Ta = 85°C VCE = −10 V 25°C − 0.01 − 0.1 −10 −10 −100 −1 000 DMG20402(Tr2)_VCEsat-IC Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −30°C Ta = 85°C IC / IB = 10 25°C Characteristics charts of Tr2
Ver. BED DMG20402 Mini6-G4-B Unit: mm Land Pattern (Reference) (Unit: mm)
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