DME150 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 DME 150
150 Watts, 50 Volts, Pulsed
The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and ouput prematch for broadband capabilit. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AY, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 290 Wattso2 Maximum Voltage and Current BVces Collector to Base Voltage 55 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 15 Amps Maximum Temperatures Storage Temperature - 65 to + 150 C o Operating Junction Temperature + 150 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg η c VSWR Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz 150 7.8 8.3 20:1 Watts Watts dB BVebo BVces Cob h FE θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown Capacitance Collector to Base DC - Current Gain Thermal Resistance Ie = 15 mA Ic = 25 mA Vcb = 50 Volts Ic = 250 mA, Vce = 5 V 4.0 0.6 Volts Volts pF C/W o Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Initial Issue June 1, 1994