DMD1006 SEME-LAB | Alldatasheet

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Technical content

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 438W (219W -A Version) 70V ±20V 30A –65 to 150°C 200°C MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED

FEATURES

 SUITABLE FOR BROAD BAND APPLICATIONS  SIMPLE BIAS CIRCUITS  ULTRA-LOW THERMAL RESISTANCE  BeO FREE L O W C rss  HIGH GAIN - 15 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

 HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz METAL GATE RF SILICON FET TetraFET A B I D E 2p l s ) G F K J L H M 2p l s ) C PIN 1 SOURCE PIN 2 DRAIN PIN 3 GATE DIM Millimetres Tol. Inches Tol. A 19.43 0.13 0.765 0.005 B 9.78 0.13 0.385 0.005 C 9.40 0.10 0.370 0.004 D 45° 5° 45° 5° E 1.63R 0.13 0.064R 0.005 F 27.94 0.13 1.100 0.005 G 12.70 0.13 0.500 0.005 H 1.57 0.13 0.062 0.005 I 34.04 0.13 1.340 0.005 J 1.01 0.13 0.040 0.005 K 19.94 0.25 0.785 0.009 L 0.10 0.25 0.004 0.002 M 4.24 0.25 0.167 0.01 ROHS COMPLIANT

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 I D = 100mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 6A PO = 150W VDS = 28V I DQ = 1.2A f = 175MHz VDS = 0V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA μA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBVDSS Breakdown Voltage Zero Gate VoltageI DSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* GPS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 4.8 20:1 360 180 * Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤ 2% RTHj–case Thermal Resistance Junction – Case Max. 0.4°C / W 0.8 °C / W -A Version THERMAL DATA

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. 1.5K10uF 40-200pF 100K 10K 10nF 10nF1nF 100nF DMD1006 16-100pF 16-100pF 40-200pF 16-100pF 16-100pF 33pF +28V Gate-Bias Taper from 5 to 12.7mm width, 12.7mm long Taper from 12.7 to 5mm width, 12.7mm long

175 MHz Test Fixture

Substrate 1.6mm PTFE/glass, Er = 2.5 All microstrip lines W = 5mm T1 7.5mm T2 16mm T3 20mm L1 9 turns 20swg encamelled copper wire, 6mm i.d. L2 11 turns 19swg enamelled copper wire on Fair-Rite FT82 ferrite coreSemelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.