DMB200B12 NIEC | Alldatasheet
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IGBT MODULE MODULE MODULE MODULE Dual 200A 1200VDual 200A 1200VDual 200A 1200VDual 200A 1200V PDMB200B12PDMB200B12PDMB200B12PDMB200B12 C I R C U I T O U T L I N E D R A W I N G MAXMUM RATINGS (Tc=25°C) Item Symbol PDMB200B12 Unit Collector-Emitter Voltage V CES 1200 V Gate - Emitter Voltage V GES +/ - 20 V DC I C 200 Collector Current 1 ms I CP 400 A Collector Power Dissipation P C 960 W Junction Temperature Range T j -40 to +150 °C Storage Temperature Range T stg -40 to +125 °C Isolation Voltage Terminal to Base AC, 1 min.) V ISO 2500 V Module Base to Heatsink 3 Mounting Torque Bus Bar to Main Terminals FTOR 2 N•m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter Cut-Off Current I CES V CE=1200V,VGE=0V - - 4.0 mA Gate-Emitter Leakage Current I GES V GE=+/- 20V,VCE=0V - - 1.0 µA Collector-Emitter Saturation Voltage V CE(sat) I C=200A,VGE=15V - 1.9 2.4 V Gate-Emitter Threshold Voltage V GE(th) V CE=5V,IC=200mA 4.0 - 8.0 V Input Capacitance Cies V CE=10V,VGE=0V,f=1MHz - 16600 - pF Rise Time t r - 0.25 0.45 Turn-on Time t on - 0.40 0.70 Fall Time t f - 0.25 0.35 Switching Time Turn-off Time t off VCC= 600V RL= 3 ohm RG= 2 ohm µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Unit DC I F 200 Forward Current 1 ms I FM 400 A Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak Forward Voltage V F I F=200A,VGE=0V - 1.9 2.4 V Reverse Recovery Time t rr IF=200A,VGE=-10V,di/dt=400A/µs - 0.2 0.3 µs THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT - - 0.125 Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.24 °C/W 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 500g
Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ 10V 12V 15V VGE=20V 048 1 2 1 6 2 00 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 200A IC=100A 400A 048 1 2 1 6 2 00 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=100A 200A 400A TC=125 ℃ 0 300 600 900 1200 1500 100 200 300 400 500 600 700 800 Total Gate Charge Qg (nC) Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) VCE=600V 400V 200V RL=3Ω TC=25℃ 0.1 0.2 0.5 1 2 5 10 20 50 100 200100 200 500 1000 2000 5000 10000 20000 50000 100000 Collector to Emitter Voltage V CE (V) Capacitance C (pF) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Cies Coes Cres VGE=0V f=1MHZ TC=25 ℃ 0 50 100 150 2000 0.2 0.4 0.6 0.8 1.2 1.4 Collector Current I C (A) Switching Time t (μs) Fig.6- Collector Current vs. Switching Time (Typical) tOFF tf tr tON VCC=600V RG= 2.0 Ω VGE=±15V TC=25 ℃
Forward Voltage V F (V) Forward Current I F (A) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25 ℃ TC=125 ℃ 0 400 800 1200 16000.1 0.2 0.5 100 200 500 1000 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.10- Reverse Bias Safe Operating Area (Typical) RG=2Ω VGE=±15V TC≦125 ℃ 1 2 5 10 20 50 100 2000.05 0.1 0.2 0.5 Series Gate Impedance R G (Ω) Switching Time t (μs) Fig.7- Series Gate Impedance vs. Switching Time (Typical) VCC=600V IC=200A VGE=±15V TC=25 ℃ tf tr ton toff 0 200 400 600 800 1000 12005 100 200 500 1000 -di/dt (A/μs) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr IF=200A TC=25℃ 10-5 10-4 10-3 10-2 10-1 11 0 1 5x10 -4 1x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 Time t (s) Transient Thermal Impedance Rth (J-C) (℃/W) Fig.11- Transient Thermal Impedance TC=25℃