DG213DJ

DG213 TEMIC | Alldatasheet

Document overview

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Technical content

V– V+ GND V L S4 S3 D 4 D 3 IN4 IN3 Top View DG213 Siliconix S-56461—Rev. C, 29-Dec-97 Quad Complementary CMOS Analog Switch Features Benefits Applications 22-V Supply V oltage Rating TTL and CMOS Compatible Logic Low On-Resistance—rDS(on): 45 Low Leakage—I D(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching—tON : 85 ns Low Charge Injection—Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Low Cost Industrial Instrumentation Test Equipment Communications Systems Computer Peripherals Portable Instruments Sample-and-Hold Circuits

Description

The versatile DG213 analog switch has two NC and two NO switches. It can be used in various configurations, including four single-pole single-throw (SPST), two single-pole double-throw (SPDT), one “T” switch, one DPDT, etc. This device is fabricated in a Siliconix’ proprietary high-voltage silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. This analog switch was designed for a wide variety of general purpose applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. These switches can handle up to 22 V , and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All switches feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. For additional information, please refer to Application Note AN208. Functional Block Diagram and Pin Configuration /C0097 /C0076 /C0083 /C0083 /C0083 /C0083

0 OFF ON

1 ON OFF

Logic “0” 0.8 V Logic “1” 2.4 V

Ordering Information

Temp Range Package Part Number 16-Pin Plastic DIP DG213DJ –40 to 85C 16-Pin Narrow SOIC DG213DY 16-Pin TSSOP DG213DQ Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70662. Applications information may also be obtained via FaxBack, request document #70606.

2 Siliconix

S-56461—Rev. C, 29-Dec-97 Absolute Maximum Ratings V oltages Referenced to V– or 30 mA, whichever occurs first Peak Current, S or D Power Dissipation (Package)b Notes: a. Signals on SX , DX , or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW//C0095C above 75/C0095C d. Derate 7.6 mW//C0095C above 75/C0095C Specifications Test Conditions Unless Otherwise Specified V1 5 V V 1 5 V D Suffix –40 to 85/C0095C Parameter Symbol V L = 5 V , VIN = 2.4 V , 0.8 Ve Temp a Min c Typ b Max c Unit Analog Switch Analog Signal Ranged VANALOG Full V– V+ V Drain-Source On-Resistance rDS(on) V D = 10 V , IS = 1 mA Room Full 45 60 /C0087 rDS(on) Match /C0068rDS(on) D , S Room 1 2 Source Off Leakage Current IS(off) V S = 14 V , VD = /C003514 V Room Full –0.5 0.01 0.5 Drain Off Leakage Current ID(off) V D = 14 V , VS = /C003514 V Room Full –0.5 0.01 0.5 5 nA Drain On Leakage Current ID(on) V S = VD = 14 V Room Full –0.5 –10 0.02 0.5 Digital Control Input V oltage High V INH Full 2.4 V Input V oltage Low V INL Full 0.8 V Input Current IINH or IINL V INH or VINL Full –1 1 /C0109A Input Capacitance C IN Room 5 pF Dynamic Characteristics Turn-On Time tON V S = 2 V SF i 2 Room 85 130 Turn-Off Time tOFF S See Figure 2 Room 55 100 ns Break-Before-Make Time Delay tD V S = 10 V , See Figure 3 Room 20 25 Charge Injection Q C L = 1000 pF, Vg= 0 V , Rg = 0 /C0087Room 1 pC Source-Off Capacitance C S(off) V S =0V f=1M H z Room 5 Drain-Off Capacitance C D(off) V S = 0 V, f = 1 MH z Room 5 pF Channel On Capacitance C D(on) V D = VS = 0 V , f = 1 MHz Room 16 Off Isolation OIRR C L = 15 pF, RL = 50 /C0087 V 1 V f 100 kH Room 90 dB Channel-to-Channel Crosstalk X TALK L p, L V S = 1 VRMS , f = 100 kHz Room 95 dB

S-56461—Rev. C, 29-Dec-97 Specifications Test Conditions Unless Otherwise Specified V1 5 V V 1 5 V D Suffix –40 to 85/C0095C Parameter Symbol V L = 5 V , VIN = 2.4 V , 0.8 Ve Temp a Min c Typ b Max c Unit Power Supply Positive Supply Current I+ V IN =0o r5V Room Full Negative Supply Current I– V IN = 0 or 5 V Room Full /C0109A Logic Supply Current IL Room Full Power Supply Range for Continuous Operation V OP Full 3 22 V Specifications for Unipolar Supply Test Conditions Unless Otherwise Specified V1 2 V V0 V D Suffix –40 to 85/C0095C Parameter Symbol V+ = 12 V , V– = 0 V V L = 5 V , VIN = 2.4 V , 0.8 Ve Temp a Min c Typ b Max c Unit Analog Switch Analog Signal Ranged VANALOG Full V– V+ V Drain-Source On-Resistance rDS(on) V D = 3 V , 8 V , IS = 1 mA Room Full 90 110 140 Dynamic Characteristics Turn-On Time tON V S = 8 V SF i 2 Room 125 200 Turn-Off Time tOFF S See Figure 2 Room 45 100 ns Break-Before-Make Time Delay tD DG213 Only, See Figure 3 Room 50 80 Charge Injection Q C L = 1 nF, Vgen= 6 V , Rgen = 0 Room 4 pC Power Supply Positive Supply Current I+ V IN =0o r5V Room Full Negative Supply Current I– V IN = 0 or 5 V Room Full /C0109A Logic Supply Current IL Room Full Power Supply Range for Continuous Operation V OP Full /C00413 /C0041 V Notes: a. Room = 25 /C0095C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY , not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. V IN = input voltage to perform proper function.

4 Siliconix

S-56461—Rev. C, 29-Dec-97 Typical Characteristics 100 150 200 250 300 02468 1 0 1 2 85/C0095C –20 –16 –12 –8 –4 0 4 8 12 16 20 100 110 –15 –10 –5 0 5 10 15 5 V rDS(on) vs. VD and Power Supply Voltages V D – Drain V oltage (V) 10 V 15 V 20 V rDS(on) vs. VD and Temperature V D – Drain V oltage (V) 125/C0095C 25/C0095C –55/C0095C V+ = 15 V V– = –15 V 100 rDS(on) – Drain-Source On-Resistance ( ) rDS(on) – Drain-Source On-Resistance ( ) rDS(on) vs. VD and Single Power Supply Voltages V D – Drain V oltage (V) 5 V 7 V 10 V 12 V –20 –15 –10 –5 0 5 10 15 20 –20 –40 Leakage Currents vs. Analog Voltage IS,ID – Current (pA) IS(off), ID(off) ID(on) –55 25 45 5–15 65 1 nA 100 pA 10 pA –35 1 pA 85 105 125 V+ = 15 V V– = –15 V V S, VD = 14 V IS(off), ID(off) IS,ID – Current Temperature (/C0095C) Leakage Current vs. Temperature rDS(on) – Drain-Source On-Resistance ( ) VANALOG – Analog V oltage (V) V+ = 22 V V– = –22 V TA = 25/C0095C –10 –30 –15 –10 –5 0 5 10 15 –10 –20 –30 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V Q – Charge (pC) Q S, QD – Charge Injection vs. Analog Voltage VANALOG – Analog V oltage (V) V– = 0 V V L = 5 V

6 Siliconix

Figure 3. Break-Before-Make

0 VOutput

Figure 4. Off Isolation Figure 5. Channel-to-Channel Crosstalk Figure 6. Charge Injection

S-56461—Rev. C, 29-Dec-97

Applications

Figure 7. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain