DFH10T SANYO | Alldatasheet

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Features

. High-speed switching use + Plastic molded structure + Reverse recovery time trr=0.15us max(B,C,E,G) trr=0.3us max(J,L,N,R) . Peak reverse voltage Vpy=-100 to -1500V « Average rectified current Io=1.0A Peak Reverse Voltage Vem -100 -200 -400 -600 V Average Rectified Current Io Ta=25°C > > > 1.0 A Surge Forward Current Irgy 50Hz sine wave, > > > 60 A 1 cycle Junction Temperature Ti > > > 150 °C Storage Temperature Tstg > > -40 to +150 °C DFH10TJ DFH10TL DFH10TN DFH1OTR unit Peak Reverse Voltage Vem -800 -1000 ~1200 1500 Vv Average Rectified Current Io Ta=25°C - ad -~ 1.0 A Surge Forward Current Ipgy 50Hz sine wave, > > > 4o A 1 cycle Junction Temperature Tj ~ > > 125 Storage Temperature Tstg > > “40 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Forward Voltage Vp Ip=1.0A(B,C,E,G) 1.2 Vv Ip=1.0A(J,L,N,R) 1.5 Vv Reverse Current Ip Vp: At each V, -10 pA Reverse Recovery Time trr Tpe2mA,,Vpe-150¢B,C,E,6) 0.15 ys . Tp=2mA, Vas-15V(5,L,N,R) : 0.3 ps sop Ou.T ° 7 ] os iFe2ma) 2s -isy —b422; ama 600 Hl lee Reverse Recovery Time Test Circuit Unit (resistance: , capacitance: F) Package Dimensions 1175 (unit: mm) asf = ~ t A «| . fathode mark = S|. Cathode A. Anode SANYO Electric Co.,Ltd. Semiconductor Business Headquarters > . TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN JO67AT,TS No.2374-1/2

8 Dotted line: J,L,N,R-rank DFH}OTB,CrE off | [| [|

a ¥ "10 { 2" re e/a a 1 © | |Resistive, inductive load I | y Eto ~~ ey tT ye TT oe ee go RES ay lye TT Fy TaN NA poe ° iv XW ej | yy Z SS ett wy tt to so? RRS 0.1 = ~“ . oe ee eS ee 9° 20 ) 60 80 100 120 a) 60 0 04 O08 12 16 20 26 28 3.2 Ambient Temperature,Ta ~ °C Forward Voltage, Vp - V IFSM - 7 If - VE 60 zy 7 < SOHy - DFHIOTIZLANOR [YI | | 1 10 4 aN ry tT TT A FON ey TT (A

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E WN Nore, Eo | lA | TT | ° kel | ioe el ey A g —— ad § 2 | Pe ey E | in Sa | 3° Sn en ee ee i [ ] i7F | | 7 ft a ol sl +0 10 700 0 04 08 42 16 20 24 2.8 32 Number of Cycles at 50Hz,n Forward Voltage, Vp - V HE No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace ‘equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shalt © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses. associated with such use: ® Not impose any responsibility for Any fault or negligence which may be cited in any such claim or ligation on SANYO ELECTRIC CO, LTD, its affiiates, subsidiaries and distributors or any of their officers and employees jointly or severally. : WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No. 2374 - 2/2