DFD30T SANYO | Alldatasheet
Document overview
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Technical content
Features
- High-speed switching use + Reverse recovery time trr=0.15ys max (B,C,E,G) trr=0.3ps max (J,L) - Peak reverse voltage Vpm=~—100 to —1000V - Average rectified current 19=3.0A Peak Reverse Voltage Vru —100 —200 —400 -600 V Average Rectified Current Ip Ta=25°C > > > 3.0 A Surge Forward Current Ipgm 50Hz sine wave, ad > > 140 A leycle Junction Temperature Tj > > > 150 °C Storage Temperature Tstg > > —40to +150 °C DFD30TJ DFD30TL unit Peak Reverse Voltage Vrm —800 —1000 v Average Rectified Current Ip Ta=25°C > 3.0 A Surge Forward Current Ipsm 50Hzsine wave, > 80 A leycle Junction Temperature Tj > 125 °C Storage Temperature Tstg > ~—40to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Forward Voltage VF Ip=3.0A (B,C,E,G) 1.2 v Ip=3.0A (J,L) 15 Vv Reverse Current Ip Vr: At each Vay -20 pA Reverse Recovery Time trr Ip=2mA,Vp= —15V (B,C,E,G) 0.15 us Ip=2mA,VR= —15V WL) 0.3 ps Reverse Recovery Time Test Circuit 50p D.U.T ° Fr ~~ 1Fczma} 0.1116; Ue. L ama Package Dimensions -15v~“J22ys 600 | i" cae 15V rp (unit:mm) 1177 o— +t irr, 21.0 1 8-0 27-0 Unit (resistance: ©, capacitance: F) | ¢ +I A alc. cathode ‘cathode mark A. Anode SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5138TA,TS No.2405-1/2
32, Io - Ta If - VF oN to, |] Dotted line J,L rank to | | {| V7 DFDSOTB,C/E+G Tp eT a A oo 1 eal INGA A | z NOke TT ft EA & *4 Capacitive XW Ney Ld Ar ee ee Sid SN | ACT oO tg +. SP 51.0 En PSN eg mea —— fa tT TSS oF EY PtH 1 rt ? ly : Fos NE | ft a h IN a ° 20 40 60 80 100 120 40 160 0 64 08 1-2 160620 26 2:8 3-2 Ambient Temperature,Ta — °C Forward Voltage,Vp — V I - - 240, FSM - n 2 If - VF < 200 a A B sel <j] TT TA 3 230 rg EJ i E Ls Coe, gory er £ oo) SET a eq] ive PT z I |_| 5 F La 2a i poe Pee LO : WO 2 | Bor a Lorn se | ee dl er A ro 2 3 5 7 49 2 3 5 Tio 2 0 04 08 12 16 20 26 26 32 Number of Cycles at 50Hz,n Forward Voltage,Vp — V MI No products described or contained herein are intended for use in surgical implants, life-support systems, . aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the tike, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. IW Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2405-2/2