DF1 SIPOWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
© siPower DF4 (20-100) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el, 1.0A Unit: mm @ Veen 200V~1000V os ourxas Glass passivated chip = Sr | x e High surge forward current capability 4 CT] | | E Supersmall size \\ ] \\;* 0se0. 4] qe a Vv W oy . Applications fs0ssoe e General purpose 1 phase Bridge f f\\ = rectifier applications fa fal roo. DF1 s| g 3
80 ON) < = ~
m Limiting Values (Absolute Maximum Rating) — tam fot unt | contins to Tw Pw [we [serigoronpoane fT | © | netsh finormoe | © fe] |e Junction Temperature [nepainePeskrewsevetage | Yew | V | | 2000] io Current Squared Time Pt ns 1ms<t<8.3ms Tj=25'C, 45 Rating of per diode Electrical Characteristics (T.=25°C Unless otherwise specified) tom Symbol Test Condition me | [rarownecon | tm" | 4 | vasa Pianesanmin aa coeanie |" ny |_Battenjucion and anion Onatunina sterate |_| Thermal Resistance CW http://www.sipower-inc.com
© siPower DF 1 (20-100) Power Semiconductor Technology Bridge Rectifier @ Characteristics(Typical)
00 SS o 24 fi | | | | | [I] J
2 ——— = EEEEEEE EHH = a ey Ae A ee to wf a = tL 4H er ae os A op ff 0 rs ey 2 | ee 04 | J Poot tT ma [<n | ont 117 ft ae 0 02 04 O6 08 10 12 0 02 04 06 08 1 Vem (V) Io (AD Forward Characteristics Plo Ci lo Curve a sre weve 14 2 > “ATT rT pet OOD 8 EE es é SO Figg Sa a, NH ‘ode | » CCE | ett | CORNEA 20 ae nonrepatse | os ENCE EEE Pa we ; 8 PEE ENSEE EEE 15 <4 os EINE Po PAT a 10 ee i CEEEELELENELELE ee 04 | CENCE BE SE gab appear INE
0 CE > one Bee EEE ES
1 2 5 10 20 50 100 0 40 80 420 160 Number of Cycles Ta CO) Surge Forward Current Capability lo-Ta Curve http://www.sipower-inc.com