T7024_09 ATMEL | Alldatasheet

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Features

  • Single 3-V Supply Voltage  High Power-added Efficient Power Amplifier (Pout Typically 23 dBm)  Ramp-controlled Output Power  Low-noise Preamplifier (NF Typically 2.1 dB)  Biasing for External PIN Diode T/R Switch  Current-saving Standby Mode  Few External Components  QFN20 Package with Extended Performance 1. Description The T7024 is a monolithic SiGe transmit/receive front-end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like Bluetooth ® and WDCT. Due to the ramp-control feature and a very low quiescent current, an external switch transistor for VS is not required. Figure 1-1. Block Diagram TX/RX/ Standby Control PA LNA TX RX PU V1_PA V3_PA_OUT RAMP LNA_OUT PA_IN V2_PA LNA_IN R_SWITCH SWITCH_OUT VS_LNARX_ON Bluetooth/ISM 2.4-GHz Front-end IC T7024 4533I–BLURF–01/09

4533I–BLURF–01/09 T7024 2. Pin Configuration Figure 2-1. Pinning QFN20 GND RAMP V3_PA_OUT V3_PA_OUT V3_PA_OUT 201716 19 18 6910 T7024 GND V1_PA PA_IN V2_PA V2_PA LNA_IN GND GND VS_LNA GND LNA_OUT RX_ON R_SWITCH SWITCH_OUT PU Table 2-1. Pin Description Pin Symbol Function

1 LNA_OUT Low-noise amplifier output

2 RX_ON RX active high

3 PU Power-up active high

4 R_SWITCH Resistor to GND sets the PIN diode current

5 SWITCH_OUT Switched current output for PIN diode

6 GND Ground

7 LNA_IN Low-noise amplifier input

8 GND Ground

9 VS_LNA Supply voltage input for low-noise amplifier

10 GND Ground

11 V3_PA_OUT Inductor to power supply and matching network for power amplifier output

12 V3_PA_OUT Inductor to power supply and matching network for power amplifier output

13 V3_PA_OUT Inductor to power supply and matching network for power amplifier output

14 GND Ground

15 RAMP Power ramping control input

16 V2_PA Inductor to power supply for power amplifier

17 V2_PA Inductor to power supply for power amplifier

18 GND Ground

19 V1_PA Supply voltage for power amplifier

20 PA_IN Power amplifier input

4533I–BLURF–01/09 T7024 Electrostatic sensitive device. Observe precautions for handling. 5. Handling Do not operate this part near strong electrostatic fields. This IC meets class 1 ESD test require- ment (HBM in accordance to EIA/JESD22-A114-A (October 97) and class A ESD test requirement (MM) in accordance to EIA/JESD22-A115A. 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage Pins VS_LNA, V1_PA, V2_PA, V3_PA_OUT V S 6V Junction temperature T j 150 °C Storage temperature T stg –40 to +125 °C RF input power LNA P inLNA 5d B m RF input power PA P inPA 10 dBm 4. Thermal Resistance Parameters Symbol Value Unit Junction ambient QFN20, slug soldered on PCB R thJA 27 K/W 6. Operating Range All voltages are referred to ground (pins GND and slug). Power supply points are VS_LNA, V1_PA, V2_PA, V3_PA_OUT. The table represents the sum of all supply currents depending on the TX/RX mode. Parameters Symbol Min. Typ. Max. Unit Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT V S 2.7 3.0 4.6 V Supply voltage, pin VS_LNA V S 2.7 3.0 5.5 V Supply current TX Supply current RX IS IS 165 mA mA Standby current, PU = 0 I S_standby 10 µA Ambient temperature T amb –25 +25 +85 °C

4533I–BLURF–01/09 T7024 7. Electrical Characteristics Test conditions (unless otherwise specified): VS = 3.0V, Tamb = 25°C Parameters Test Conditions Symbol Min. Typ. Max. Unit Power Amplifier(1) Supply voltage Pins V1_PA, V2_PA, V3_PA_OUT V S 2.7 3.0 4.6 V Supply current TX I S_TX 165 mA RX (PA off), VRAMP ≤ 0.1V I S_RX 10 µA Standby current Standby I S_standby 10 µA Frequency range TX f 2.4 2.5 GHz Gain-control range TX ΔGp 60 42 dB Power gain maximum TX, pin PA_IN to V3_PA_OUT Gp 28 30 33 dB Power gain minimum TX, pin PA_IN to V3_PA_OUT Gp –40 –17 dB Ramping voltage maximum TX, power gain (maximum) Pin RAMP V RAMP max 1.7 1.75 1.83 V Ramping voltage minimum TX, power gain (minimum) Pin RAMP VRAMP min 0.1 V Ramping current maximum TX, V RAMP = 1.75V, pin RAMP I RAMP max 0.5 mA Power-added efficiency TX PAE 35 40 % Saturated output power TX, input power = 0 dBm referred to pins V3_PA_OUT Psat 22 23 24 dBm Input matching(2) TX, pin PA_IN Load VSWR < 1.5:1 Output matching(2) TX, pins V3_PA_OUT Load VSWR < 1.5:1 Harmonics at Psat = 23 dBm TX, pins V3_PA_OUT 2 fo –30 dBc TX, pins V3_PA_OUT 3 fo –30 dBc T/R Switch Driver (Current Programming by External Resistor from R_SWITCH to GND) Switch-out current output Standby, pin SWITCH_OUT I S_O_standby 1µ A RX I S_O_RX 1µ A TX at 100Ω IS_O_100 1.7 mA TX at 1.2 kΩ IS_O_1k2 7m A TX at 33 kΩ IS_O_33k 17 mA TX at ∞ IS_O_R 19 mA Low-noise Amplifier(3) Supply voltage All, pin VS_LNA V S 2.7 3.0 5.5 V Supply current RX I S 89 m A Supply current (LNA and control logic) TX (control logic active) Pin VS_LNA IS 0.5 mA Notes: 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mismatch and duration: load VSWR = 10:1 (all phases) 10s, ZG = 50Ω. 2. With external matching network, load impedance 50 Ω. 3. Low-noise amplifier shall be unconditionally stable. 4. With external matching components. 5. LNA gain can be adjusted with RX_ON voltage according to Figure 9-10 on page 9. Please note, that for RX_ON below 1.4V the T/R switch driver switches to TX mode.

4533I–BLURF–01/09 T7024 Standby current Standby, pin VS_LNA I S_standby 11 0 µ A Frequency range RX f 2.4 2.5 GHz Power gain (5) RX, pin LNA_IN to LNA_OUT Gp 15 16 19 dB Noise figure RX NF 2.1 2.3 dB Gain compression RX, referred to pin LNA_OUT O1dB –9 –7 –6 dBm rd-order input interception point RX IIP3 –16 –14 –13 dBm Input matching(4) RX, pin LNA_IN VSWRin 2:1 Output matching(4) RX, pin LNA_OUT VSWRout 2:1 Logic Input Levels (RX_ON, PU)(5) High input level = ‘1’ pins RX_ON and PU V iH 2.4 V S, LNA V Low input level = ‘0’ V iL 00 . 5 V High input current = ‘1’ V iH = 2.4V I iH 40 60 µA Low input current = ‘0’ I iL 0.2 µA 7. Electrical Characteristics (Continued) Test conditions (unless otherwise specified): VS = 3.0V, Tamb = 25°C Parameters Test Conditions Symbol Min. Typ. Max. Unit Notes: 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mismatch and duration: load VSWR = 10:1 (all phases) 10s, ZG = 50Ω. 2. With external matching network, load impedance 50 Ω. 3. Low-noise amplifier shall be unconditionally stable. 4. With external matching components. 5. LNA gain can be adjusted with RX_ON voltage according to Figure 9-10 on page 9. Please note, that for RX_ON below 1.4V the T/R switch driver switches to TX mode. 8. Control Logic PA and LNA/Antenna Switch Driver PU RX_ON Ramp (1) PA LNA Antenna Switch Driver Operation Mode 0 0 0 off off off standby 0 0 1 on off off (2) 010 o f f o n o f f ( 3 ) 0 1 1 on on off (4) 1 0 0 off off on (4) 1 0 1 on off on TX 110 o f f o n o f f R X 1 1 1 on on off (5) Notes: 1. “0” = V RAMP ≤ 0.1V, “1” = VRAMP typically 1.75V, 1.3V < VRAMP < 1.83V controls gain and output power, compare Figure 9-5 on page 7 2. Only for special operation, e.g. only PA operation, no LNA/switch driver operation 3. Only for special operation, e.g. no switch driver operation 4. Only for special operation 5. Only for special operation, e.g. separate TX/RX antennas, TX and RX operation at the same time

4533I–BLURF–01/09 T7024 Figure 10-9. Typical Application T7024 PA_INLNA_OUT R1 is selected with DIL-switch blocking capacitors depending on application Pin diode repl aced by LED on application board Var V1_PA V2_PA harm. termination PU PX_ON PA_OUTV3_PAVS_LNASwitch_OUT LNA_IN PA_RAMP 10769 8 161920 1718 T7024 3.3 pF 18 nH 1 pF2.2 pF 2.2 pF 1.8 pF 0.8 pF

4533I–BLURF–01/09 T7024 12. Package Information 11. Ordering Information Extended Type Number Package Remarks MOQ T7024-PGPM QFN20 Taped and reeled Pb free, halogen free 1500 pcs. T7024-PGQM QFN20 Taped and reeled Pb free, halogen free 6000 pcs. Demoboard-T7024-PGM QFN20 Evaluation board QFN 1 610 2016 3.1 2.6 0.65 nom. specifications according to DIN technical drawings Issue: 1; 19.12.02 Drawing-No.: 6.543-5094.01-4 Package: QFN 20 - 5 x 5 Exposed pad 3.1 x 3.1 Dimensions in mm Not indicated tolerances ± 0.05 0.28 0.6 0.9±0.1 0.05-0.05

4533I–BLURF–01/09 T7024 13. Recommended PCB Land Pattern Figure 13-1. Recommended PCB Land Pattern 14. Revision History Table 13-1. Recommended PCB Land Pattern Signs Sign Description Size A Distance of vias 1.6 mm B Size of slug pattern 3.1 mm C Distance slug to pins 0.33 mm D Diameter of vias 1 mm E Width of pin pattern 0.3 mm F Distance of pin pattern 0.33 mm A C E F D B Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4533I-BLURF-01/09 • PSSO20 package variant deleted 4533H-BLURF-07/07

  • Put datasheet in a new template
  • Page 1: Block diagram changed
  • Page 13: Figure 10-8 changed

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