DD200GB40 SANREX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com DD200GB DIODE MODULE Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800V is available for various input voltages.

  • Isolated mounting base
  • Two elements in a package for simple（single and three phase）bridge connections
  • Highly reliable glass passivated chips
  • High surge current capability （Applications） Various rectifiers, Battery chargers, DC motor drives ■Maximum Ratings （Tj＝25℃unless otherwise specified） Symbol Item Ratings DD200GB40 400 480 Unit VRRM VRSM Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage DD200GB80 800 960 V V Symbol Item Average Forward Current Conditions Ratings Unit A IF（AV） Single phase, half wave, 180℃conduction, Tc: 96℃ 200 IF（RMS） IFSM R.M.S. Forward Current Surge Forward Current Single phase, half wave, 180℃conduction, Tc: 96℃ 1／2 cycle, 50/60HZ, peak value, non-repetitive 310 A A I2t I2t Value for one cycle of surge current 125000 A2S Tj Operating Junction Temperature －40 to ＋150 Tstg Storage Temperature －40 to ＋125 VISO Isolation Breakdown Voltage（R.M.S.） Mounting Torque A.C. 1 minute 2500 V Mounting（M5） Terminal（M8） Mass Recommended Value 1.5-2.5（15-25） Recommended Value 8.8-10 （90-105） 2.7（28） 11（115） N･m （㎏f･B） g Typical Value 510 92±0.5 M8×14 80±0.3 42max 34max 60±0.5 48±0.3 4-φ6（M5）R8.0 5 2 Unit：㎜ ■Electrical Characteristics （Tj＝25℃unless otherwise specified） Symbol IRRM Item Repetitive Peak Reverse Current, max. Conditions at VRRM. Single phase, half wave, Tj＝150℃ Ratings 1.40 0.18 Unit mA VFM Forward Voltage Drop, max. Forward current 600A, Tj＝25℃, Inst measurement V Rth（j-c）Thermal Impedance, max. Junction to case （Per a half module） ℃/W UL;E76102（M） DD ３２１SanRex®

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com DD200GB Maximum Forward Characteristics Forward Voltage Drop VF（V）２２５２５０１． ０１． ５２． ０３． ０２． ５１０ ３１０ ２１０

１ Forward Current IF（A）Per one element

Tj＝25℃～150℃Average Forward Current vs. Power Dissipation Average Forward Current IF（A）５００４００３００２００１０００５００１００１５０２００２５０ ３００ ３５０Power Dissipation Pav（W）D.C. Three Phase Single Phase Per one element Average Forward Current vs. Allowable Case Temperature Average Forward Current IF（A）１５０１４０１３０１２０１１０１００９０８０７０６０５００ ５０１００１５０２００２５０３００３５０Allowable Case Temperature Tc（℃）Per one element Three Phase Single Phase D.C. Cycle Surge Forward Current Rating （Non-Repetitive）Time（Cycles）６０００５０００４０００３０００２０００１００００５２２５１０ ０１０ １１０ ２Surge Forward Current IF（A）60Hz Ｔｊ=２５℃ start 50Hz Per one element ２０． １０Transient Thermal Impedance Time t（sec）２２５５２５２５１０ -３１０ -２１０ -１１０ ０１０ １Transient Thermal Impedance θj-c（℃/W）Maximum Junction to Case Per one element Id（Aav.）１２００１０００６００４００２００８０００９０１００１２０１３０１４０１１０１５０Output Current B２；Two Pluse Bridge connection Ambient Temperature（℃）Output Current（A）００１００４００３００２００２５５０７５１００１２５１５０Total Power Dissipation（W）Allowable Case Temperature（℃）Rth（f-a） ：Thermal resistance between fin and ambient ：Thermal resistance between fin and ambient １７５０１５００１０００７５０５００２５０１２５００８０９０１００１１０１２０１３０１４０１５０Output Current B６；Six pulse Bridge connection Ambient Temperature（℃）Output Current（A）００５００２５０２５５０７５１００１２５１５０Total Power Dissipation（W）Allowable Case Temperature（℃）B6