DD100GB40 SANREX | Alldatasheet
Document overview
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Technical content
DD(KD)100GB40/80 DIODE MODULE Symbol Item Ratings DD100GB40 400 480 Unit VRRM VRSM Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage DD100GB80 800 960 V V Unit a Symbol Item Average Forward Current Conditions Ratings Unit AIF AV Single phase, half wave, 180 conduction, Tc 115 100 IF (RMS) R.M.S. Forward Current Single phase, half wave, 180 conduction, Tc 115 155 A IFSM Surge Forward Current 1 2 cycle, 50/60HZ, peak value, non-repetitive 1800/2000 A I2t I2t Value for one cycle of surge current 16500 A2S Tj Junction Temperature 40 150 Tstg Storage Temperature 40 125 VISO Isolation Breakdown Voltage R.M.S. Mounting Torque A.C.1minute 2500 V Mounting M6 Terminal M5 Mass Recommended Value 2.5 3.9 25 40 Recommended Value 1.5 2.5 15 25 4.7 48) 2.7 28) N m f B g170
Electrical Characteristics
Repetitive Peak Reverse Current, max. Conditions at VDRM, single phase, half wave. Tj 150 Ratings 1.25 0.30 Unit mA VFM Forward Voltage Drop, max. Foward current 320A Tj 25 Inst. measurement V Rth j-c Thermal Impedance, max. Junction to case /W Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V is avaiable for various input voltage. Isolated mounting base Two elements in a package for simple (single and three phase) bridge connections Highly reliable glass passivated chips High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives UL;E76102 M Maximum Ratings Tj 25
DD(KD)100GB40/80