DCA200UA65 SANREX | Alldatasheet
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SOFT RECOVERY DIODE MODULE DCA200UA65 NBY ʵП NBY ʶ ʶ ʶ ʢTDSFXJOHEFQUINNʣ ■Maximum Ratings 最大定格 ʢUnless otherwise specified Tjʹ25ΓTjʹ25ˆʣ Symbol Item Ratings Unit ୯ҐDCA200UA65 V RRM Repetitive Peak Reverse V oltage ిѹ 650 V V R ʢDCʣ Reverse D.C. V oltage ిѹ 600 V Symbol ߸هItemɹ Conditions݅Ratings Unit ୯Ґ I FʢA Vʣ Output Curr ent ॱిྲྀ D.C. T cʹ85ˆ ྲྀɼέʔεԹ85ˆ 200 A I FSM Sur ge Forwar d Curr ent αʔδॱిྲྀ ½cycle, 60Hz, Peak value, non-r epetitive ½ɼ60Hzฦ͠ 1350 A I 2 t I 2 t V alue for one cycle of sur ge curr ent ʢ60Hzʣ ̍αΠΫϧαʔδΦϯిྲྀʹର͢Δ 7500 A 2 s Tj Junction T emperatur e ෦Թ ʵ40ʙʴ150 ˆ T stg Storage T emperatur e อଘԹ ʵ40ʙʴ125 ˆ V ISO Isolation V oltageʢR.M.S.ʣ A.C. 1 minute A.C.ؒ2500 V M o u n t i n g t o r q u e కτϧΫ Mounting M6 औʢM6ʣ Recommended V alue ਪ 2.5ʙ3.9 ʢ25ʙ40ʣ 4.7ʢ48ʣ N ɾm ʢkgf ɾᶲʣT erminal M6 ʢM6ʣ Recommended V alue ਪ 2.5ʙ3.9 ʢ25ʙ40ʣ 4.7ʢ48ʣ Mass T ypical V alue ද 200 g ■Electrical Characteristics 電気的特性 ʢUnless otherwise specified Tjʹ25ˆ / Γ T j ʹ2 5 ˆʣ Symbol Item Conditions Ratings Unit ୯ҐMin. T yp. Max. I RRM Repetitive Peak Reverse Curr ent ిྲྀ V R ʹV RRM , Tjʹ150ˆ 50 mA V FM Forwar d V oltage Dr op Լ I F ʹ200A, Inst. measur ement ଌఆ 1.40 1.70 V t rr Reverse r ecovery time I F ʹ200A, V R ʹ300V , -di/dtʹ400A/µs 210 360 ns i rr Reverse r ecovery peak curr ent ճ෮ϐʔΫిྲྀ 35 50 A t b/ t a Softness ιϑτωεੑ 1.0 VT ʢTOʣ Thr eshold V oltage ᮢిѹ Tjʹ150ˆ 0.98 V rt Slope Resistance ߅Tjʹ150ˆ 3.0 mЊ Rth ʢj -cʣ Thermal Resistance ʣ Junction to case, per ½ module ½ Ϟδϡʔϧ 0.19 ˆ/W Rth ʢc-fʣ Contact Thermal Resistance ʣ Case to Heat sink, per one module Thermal ConductivityʢSilicon gr easeʣ ʹ7ʷ10 -3ʦW/cm ɾˆʧ ɺϞδϡʔϧΓ γϦίϯάϦεͷಋʹ7ʷ10 -3ʦW/cmɾ ˆʧ 0.09 ˆ/W Unit ୯Ґɿmm UL; E76102 ʢMʣ DCA200UA65 ʪFeatures & Advantagesʫ ʪಛʫ wAchieve a balance between low loss (VF=1.4VʤT ypʥ ) and higher soft recove ry charactaristics due to a local lifetime control using ion irradiation technology . Therfore, prevent occurrence of noise based on high sur ge voltage generated during reverse recovery operation. ޚ ʢV F ʹ1 . 4 V ʤT y p ʥʣͱ ͍ιϑτੑΛཱ྆ɻ ʹൃੜ͢ΔαʔδిѹʹΑΔϊΠζ Λେ෯ʹ੍ɻ Λ 4 0ൺʣ ిྲྀ I R R M ʽ5 0 ̼Aࣦ ɹैདྷൺ1 / 2ൺɹT j = 1 5 0 ˆʣ ύοέʔδ wReducing lThermal Resistancez 40% due to adopting high heat radiation material and a new design internal configration. w Low loss based on low I RRM 㱡50mA,50% lower than our existing product. (Tj=150㱥) w High power isolated package. ʪApplicationsʫ ʪ༻్ʫ Plasma cutting machine, W elding machine, Power supplies, PV inverter (Booster chopper circuit) ஔɺ Πϯόʔλʢঢѹϒʔελʔ෦ʣ
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