CESD5V0D5 SHUNYE | Alldatasheet

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Technical content

Features

Ultra small package:SOD-523 Protects one data or power line Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage 2-Pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV IEC61000-4- Lightning A ( μ ROHS Compliant Mechanical Characteristics Package: SOD-523 Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below

Description

n un i-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The DC 1D5 complies with the IEC 61000-4-2(ESD) with ±30kV air and ±30kV contact discharge. It is assembled into an ultra- small SOD-523 lead-free package. The small size and high ESD surge protection make DC D5 an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications. Dimensions and Pin Configuration Marking Information Circuit and Pin Schematic Marking Part Number Packaging Reel Size CESD5V0D5/ DC 1D5 D 3000/Tape & Reel 7 inch

Ordering Information

D 5.0V ESD Protection Diode CESD5V0D5 /DC0501D5 www.shunyegroup.com.cn V2.22

Absolute Maximum Ratings (T A =25°C unless otherwise specified) Electrical Characteristics (T A =25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Current (8/20µs) Ipp A ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) V ESD ±30 ±30 kV Operating Temperature Range T J −55 to +125 Storage Temperature Range Tstg −55 to +150 Parameter Symbol Min Typ Max Unit Test Condition Reverse Working Voltage V RWM V Pin to p in 2 Breakdown Voltage V BR 8.5 V I T = 1mA, Pin 1 to Pin 2 Reverse Leakage Current I R 0.2 μ A V RWM = 5V, Pin 1 to Pin 2 Forward Voltage V F 1.0 1.2 V I F 10mA, p in 2 to p in Clamping Voltage V C V I PP (8 x 20µs pulse), Pin to pin2 Junction Capacitance C J pF VR = 0V, f = 1MHz CESD5V0D5 /DC0501D5 www.shunyegroup.com.cn V2.22

Typical Performance Characteristics (T A =25 unless otherwise Specified) Junction Capacitance vs. Reverse Voltage Clamping Voltage vs. Peak Pulse Current P ower Derating Curve

8 X 20

μ s Pulse Waveform ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 Note Data is taken with a 10x attenuator CESD5V0D5 /DC0501D5 www.shunyegroup.com.cn V2.22

A 0.51 0.77 0.020 0.031 0.50 0.70 0.020 0.028 b 0.25 0.35 0.0 0.014 c 0.08 0.15 0.003 0.006 D 0.75 0.85 0.030 0.033 E 1.10 1.30 0.043 0.051 1.50 1.70 0.059 0.067 0.20REF 0.008REF L 0.01 0.07 0.001 0.003 Θ REF REF CESD5V0D5 /DC0501D5 www.shunyegroup.com.cn V2.22