MMBD914 SHUNYE | Alldatasheet

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Technical content

Green molding compound device,if none,the normal device.

FEATURES

MARKING: Maximum R atings @Ta =25 Parameter Symbol Limit Unit Non- Rep etitive Peak Reverse Voltage V RM 100 V Peak Re p etitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 100 V Ave r age Rectified Output Current I O 300 mA Forw ard Surge Current I FSM A Powe r Dissipation P D 3 5 0 m W T h e rmal Resi st an ce Ju n c tio n to Ambient R θJA 357 Operation Junction and St orage Temperature Range T j STG 55~ 150 Electrical Characteristics@T a Parameter Sy mbol Min Typ Max Unit Conditions Reve rs e Breakdown Voltage V (BR) 100 V I R =100 μ A V 715 mV I F mA V 855 mV I F =10mA V 1000 mV I F =50mA For w a rd V o lt age V 125 mV I F 150mA I uA V R =75V Re v e rs e Cu rr e n t I nA V R =20V Diode Capacitance C D pF V R =0,f=1MHz Reve rs e Recovery Time t rr ns I F R =10mA, I rr =0.1* I R Non-Rep etitive Peak t m s MMBD914 SWITCHING DIODE www.shunyegroup.com.cn V2.22

0.0 0.4 0.8 1.2 1.6 0.1 100 100 1000 1.0 1.1 1.2 1.3 1.4 Po w er Derating Curve POWER DISSIPAT ION P D (mW) AMBIENT TEMPERATURE Ta ( ) 300 0.3 T a T a FORWARD CURRENT I F (mA) FORW ARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLT AGE V R (V) Fo r ward Characteristics Reverse Characteristics Ta=25 f=1MHz C ap aci tance Characteristics REVERSE VO LT AGE V R (V) CAPACITANCE BET WEEN TERMINALS C T (pF) MMBD914 www.shunyegroup.com.cn V2.22

/g54/g50/g55 /g16/g21/g22/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 Min Ma x Mi n Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e 1.800 2.000 0.071 0.079 L 0.300 0.500 0.012 0.020 θ

0.550 REF

0.022 REF

0.950 TYP

0.037 TYP

T -23 Suggested Pad Lay out MMBD914 www.shunyegroup.com.cn V2.22

www.shunyegroup.com.cn V2.22