DB3-DO-35 HDSEMI | Alldatasheet
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Technical content
Features
Small Signal Fast Switching Diodes DB3
- VBO 28V-36V Symbols Parameters Value Units PC Power Disspation on printed Circuit(L=10mm) TA=50℃ 150 mW ITRM Repetitive Peak on-state Current tp=10us f=100Hz TSTG/TJ Storage and Operating Junction Temperature -40 to+125 ℃ Symbols Parameters Test Condition Value Units VBO Break Voltage(Note 2) C=22Nf(Note2) See diagram1 V I+VBOI- I-VBOI Breakover Voltage Symmetry C=22Nf(Note2) See diagram1 I±△VI Dynamic Breakover Voltage(Note1) △I=(IBO to IF=10Ma) See diagram1 VO Output Voltage (Note1) See diagram2 Min 5 V IBO Breakover Current (Note1) C=22Nf(Note2) Max 100 uA Tr Rise Time(Note1) See diagram3 Typ 1.5 uS IB Leakage Current(Note1) VB=0.5 VBO max See diagram1 Max 10 uA 2.0 A Min 28 Typ 32 Max 36 Max V Min 5 V Electrical Characteristics (Ta=25℃ Unless otherwise specified）
H igh Diode Semiconductor
H igh Diode Semiconductor DO-35 Unit: in inches (millimeters) 1.02(26.0) MIN .165(4.20) MAX .022(0.55) MAX .079(2.00) MAX 1.02(26.0) MIN
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers