DB201S DSK | Alldatasheet
Document overview
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Technical content
1.2± 0.3 0.3 1± 0.1 6.3± 0.2 8.3± 0.3 8.3± 0.1 2.5± 0.15 5± 0.2 6.4± 0.1 7.9± 0.2 10± 0.6
FEATURES
Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product 94V-O MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. DB 203S DB 204S DB 205S DB 206S DB 207S UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Max imum av er age f orw ar d Output current @T A =25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Max imum ins tantaneous f or w ard v oltage at 2.0 A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Operating junction temperature range T J Storage temperature range T STG 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.0 A DB - S Plastic material has UL flammability classification Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams - 55 ---- + 150 - 55 ---- + 125 I R DB201S --- DB207S A 10.0 Lead solderable per MIL-STD-202 method 208 I F(AV) 2.0 SILICON BRIDGE RECTIFIERS Lead: silver plated copper, solderde plated A DB 201S DB 202S 50 100 1.1 1.0 I FSM Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.01 1.0 0 4 0 60 0.1 100 120 14080 T J =25 100 0.8 1.0 1.2 1.4 0.1 1.0 T J =125 Pulse Width =300 u S 0.60.4 .01 0.5 1.0 2.0 1.5 0 25 50 75 100 125 150 1 1 0 1 00 8.3ms Single Half Sine Wave T J =25 100 120 5 5 0 AMPERSE AVERAGE FORWARD OUTPUT CURRENT, AMPERSE CURRENT AMPERSE INSTANTANEOUS REVERSE CURRENT, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, DB201S --- DB207S AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60H Z FIG.2 -- MAXIMUM NON-REPETITIVE FORWARD SURGE FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE MICRO AMPERSE INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.diode.kr Diode Semiconductor Korea