DAP202 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） P Switching Diodes SOT-23 Plastic-Encapsulate Diodes
Applications
Suitable for High Packing Density Layout Symbol Parameter Value Unit VR DC Blocking Voltage 80 V IO Continuous Forward Current 100 mA IFM Peak Forward Current 300 mA IFSM 2 A PD Power Dissipation 200 mW RθJA Thermal Resistance from Junction to Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Non-repetitive Peak Forward Surge Current@t=8.3ms Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) I R=100μA 80 V Reverse current IR V R=70V 0.1 μA Forward voltage VF I F=100mA 1.2 V Total capacitance Ctot V R=6V,f=1MHz 3.5 pF Reverse recovery time trr I F= IR=5mA, VR=6V 4 ns
H igh Diode Semiconductor Typical Characteristics 0 25 50 75 100 125 150 100 150 200 250 300 0.1 100 02 0 40 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 0.3 Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)
H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23
Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor