DAP202 GWSEMI | Alldatasheet
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Technical content
F EATURES High Speed High Reliability Suitable for High Packing Density Layout
APPLICATIONS
High Speed Switching MARKING: P E LECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) P arameter Symbol Test conditions Min Typ Max Unit R everse voltage V(BR) I R=100μA 80 V R everse current IR V R=70V 0.1 μA F orward voltage VF I F=100mA 1.2 V T otal capacitance Ctot V R=6V,f=1MHz 3.5 pF R everse recovery time trr I F= IR=5mA, VR=6V 4 ns S OT-23 M AXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR D C Blocking Voltage 80 V IO Continuous Forward Current 100 mA IF M Peak Forward Current 300 mA IFSM 2 A PD P ower Dissipation 200 mW Rθ JA Thermal Resistance from Junction to Ambient 625 ℃/W ℃ TJ,Tstg Operation Junction and Storage Temperature Range - 55~+150 Non-repetitive Peak Forward Surge Current@t= 8.3ms P P Soli d dot = Green molding compound device,if none,the normal device. SWITCHING DIODE Plastic-Encapsulate Diodes DAP202
0.1 100 02 0 4 0 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 0.3 Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) DAP202
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP DAP202 Plastic surface mounted package; 3 leads SOT-23 PACKAGE OUTLINE