DAN202

DAN202 HDSEMI | Alldatasheet

Document overview

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Technical content

Features

Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） N Switching Diodes SOT-23 Plastic-Encapsulate Diodes

Applications

Suitable for High Packing Density Layout Symbol Parameter Value Unit VR DC Blocking Voltage 80 V IO Continuous Forward Current 100 mA IFM Peak Forward Current 300 mA IFSM 2 A PD Power Dissipation 250 mW RθJA Thermal Resistance from Junction to Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Non-repetitive Peak Forward Surge Current@t=8.3ms Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) I R=100μA 80 V Reverse current IR V R=70V 0.1 μA Forward voltage VF I F=100mA 1.2 V Total capacitance Ctot V R=6V,f=1MHz 3.5 pF Reverse recovery time trr I F= IR=5mA, VR=6V 4 ns DAN202

H igh Diode Semiconductor Typical Characteristics 0 25 50 75 100 125 150 100 150 200 250 300 0.1 100 02 0 40 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.2 1.4 1.6 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 0.3 Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor