DAN202 GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
Plastic-Encapsulate Diodes SWITCHING DIODE
FEATURES
High Speed High Reliability Suitable for High Packing Density Layout
APPLICATIONS
High Speed Switching MARKING: N MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 80 V IO Continuous Forward Current 100 mA IFM Peak Forward Current 300 mA ISM Surge Current 4 A PD Power Dissipation 250 mW RθJA Thermal Resistance from Junction to Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) I R=100μA 80 V Reverse current IR V R=70V 0.1 μA Forward voltage VF I F=100mA 1.2 V Total capacitance Ctot V R=6V,f=1MHz 3.5 pF Reverse recovery time trr I F= IR=5mA, VR=6V 4 ns SOT-23 DAN202
0.1 100 02 0 4 0 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.2 1.4 1.6 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) Typical Characteristics 0.3 Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) DAN202
Plastic surface mounted package; 3 leads SOT-23 DAN202