2SB698 SANYO | Alldatasheet

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Ordering number:EN 512F No.512F 2SB698/2SD734 Ss ANYO PNP/ NPN Epitaxial Planar Silicon Transistors . 1W AF Output, Electronic Governor, DC-DC Converter Applications () : 2SB698 for audio 1W output. Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage VcBo (-)25 Vv Collector toEmitter Voltage Vcro (-)20 Vv Emitter to Base Voltage VEBO (-)5 Vv Collector Current Ic (-)0.7 A Collector Current(Pulse) Icp (-)1.5 A Collector Dissipation Po 0.6 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to+150 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo —- Vog=(~) 20V, Ip=0 (-y.0 4A Emitter Cutoff Current TEBO Vep=(-) 4V,I¢=0 (-)L.0 4A DC Current Gain hpg1) Vog=(-)2V,Ic=(-)50mA 6 0* 560* hpg(2) Vop=(-)2V,Ic=(-)500mA 50 Gain-Bandwidth Product fr Voge (-) LOV, I¢=(-) 50maA 250 MHZ Output Capacitance Cob Vep=(-) L0V, f=1MHz ap BF C-E Saturation Voltage Vorsat) To=(-) 500mA, Ip=(~-) 50mA 636449 ¥ B-E Saturation Voltage VBE(sat) Ic=(-)500mA Ip=(50maA) (-/0.9 v C-B Saturation Voltage VBRICBO Ic=(-)L0# A, TR=0 (-125 v C-E Breakdown Voltage VBRICEO Ic=(~) 1mA, RpE=co (-)20 v E~B Breakdown Voltage VBRIEBO Ic=(-) 102A, I¢=0 (-)5 v *:2SB698/2SD734 are classified by 50mA hpp as follows: 280 6 560 Package Dimensions 2003A (unit: mm) 20 0.66 O45. tf ae) tu + O45 Lest 4.0 _| eal JEDEC: TO-92 B. Base EIAJ : SC-43 Cc. Collector SANYO: NP E. Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 10 JAPAN 4017KI/3075KI/1313KI/6162KI,TS No.512-1/3

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