D64VS3 NJSEMI | Alldatasheet

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<~>E.mL-L.onauctoi \\Pioau.cki, One. 20STI SPRIN U.S.A. ERN AVE. GFIELD, NEW JERSEY 07081 D64VS3,4,5 TELEP 300-400 VOLTS

15 AMP, 195 WATTS

The D64VS series of NPN power transistors is designed for use in power switching applications requiring high-voltage capability, fast switching speeds and low-saturation voltages. These devices are optimized to provide a unique combination of ultra-low switching losses and high safe-operating area [SOA), ideally suited for off-line switching power supplies, converter circuits and pulse width modulated regulators. Features:

  • Performance information tailored for switching
  • 100°C maximum limits specified for:
  • Switching times
  • Saturation voltages
  • Leakage currents » RBSOA (VcEX = 300 to 400V) at rated IG continuous. » Very fast turn-off, tf < 100 nsec (typ.) @ 15A — Inductive Load maximum ratings RATING Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peak'1' Base Current — Continuous Peak'1' Emitter Current — Continuous Peak'1' Total Power Dissipation @ Tc = 25° C @Tc = 100°C Derate above 25° C Operating and Storage Junction Temperature Range SYMBOL VCEO VCEX VCEV VEBO 'CM IB [BM IEM PD TJ, TSTG HONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0 845121 471 hMAX 1 i- 358(909) MAI DIA *\\ [ { 11 0043(109) n,^ I! 0038(097) I 1050!2<
  • MAX CASE TEMP f / '. i REFERENCE ' | \\^. 1 POINT T \\rfV~fr 20 5.001— ' x\\ EMITTER ' ) y® BASE -fS \\ 162(409 n,A _/ 2"0l-ES' 0440,, D 1 — 426(1082) M N 681. "I Q.»75I17.15I 0850(1851) V
  • •A 1 197(3040) jtt^rS-. /V J if" ' *v i 0 225(5 72|\\-COLLECT 0205(52') «S»SE> '8, DR 0420f'067) D64VS3 D64VS4 300 350 300 350 450 500 7 7 15 15 30 30 5 5 10 10 20 20 35 35 195 195 111 111 1.11 1.11 -65 to +200 -65 to +200 D64VS5 400 400 550 195 111 1.11 -65 to +200 UNITS Volts Volts Volts Volts A A A Watts W/°C thermal characteristics Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purpose: Ve" from Case for 5 Seconds R0JC TL 0.9 235 0.9 235 0.9 235 °C/W (1) Pulse condition, tn < 5msec. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

electrical Characteristics (Tc= 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL MIN MAX UNIT off characteristics Collector-Emitter Sustaining Voltage"' D64VS3 (lc= 100mA) D64VS4 D64VS5 Collector-Emitter Voltage D64VS3 (lc = 15A, IB1 = 2.5A, IB2 " 3.0A) D64VS4 (VBE(OFF) = -6V, L = 200 /ih) D64VS5 Collector Cutoff Current (VCEV = Rated Value, VBE(OFF) = -1-5V) (VCEV = Rated Value, VBEJOFF) = -1-5V, Tc = 100°C) Emitter Cutoff Current (VEB = 7V) VCEO(SUS) VCEX ICEV IEBO 300 350 400 300 350 400 0.1 1.0 1.0 Volts Volts mA mA second breakdown Second Breakdown with Base Forward Biased Clamped Inductive SOA with Base Reversed Bias FBSOA RBSOA SEE FIGURE 13 SEE FIGURE 14 on characteristics DC Current Gain (IC=10A,VCE = 2V) (IC=15A,VCE = 2V) Collector-Emitter Saturation Voltage (IC=10A, le=1.67A) (lc = 15A, IB * 2.5A) (lc = 15A, IB = 2.5A, TC = 100°C) Base-Emitter Saturation Voltage (IC=15A, IB = 2.5A) (lc = 15A, IB = 2.5A, TC = 100°C) hFE VCE(SAT) VBE(SAT) 0.7 1.0 1.5 1.5 1.5 Volts Volts dynamic characteristics Current Gain — Bandwidth Product (lc = 1.0A, VCE = 10V, ftest = 1-0 MHz) Output Capacitance (VCB = iov, iE = o, f = 0.1 MHZ) fr COB 150 360 MHz PF switching characteristics MAXIMUM Resistive Load (See Figure 17 for Test Circuit) Delay Time Rise Time Storage Time Fall Time VCC = 250V, IC = 15A IB1 = 2.5, \\B2 = 3.0A, tp = 50 psec Inductive Load, Clamped (See Figure 17 for Test Circuit) Storage Time Fall Time Storage Time Fall Time IC = 15A,VCLAMP = 250V IB1 = 2.5A, IB2 = 3.0A, VB£(OFF) = "6V L = 200 /in, tp = 25/isec TC td tr ts tf ts tf 25° C 0.1 0.5 2.5 0.4 3.0 0.3 100°C 0.2 0.7 3.0 0.7 3.5 0.6 MS Msec Msec Msec MS Msec TYPICAL ts tf 1.8 .085 2.5 .13 Msec Msec (1) Pulse Duration = 300/js, Duty Factor < 2%. Do not measure on a curve tracer.