D612K

2SB632 SANYO | Alldatasheet

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+ High collector dissipation and wide ASO. ( ):2SB632, 632K Absolute Maximum Ratings at Ta = 25°C 2SB632,D612 2SB632K,D612K unit Collector-to-Base Voltage Voso (-)25 (—)35 v Collector-to-Emitter Voltage Vcro (-)25 (—)35 v Emitter-to-Base Voltage VEBO (-)5 Vv Collector Current Ig (-)2 A Collector Current (Pulse) Top (-)3 A Collector Dissipation Po -1 Ww Te=25°C 10 Ww Junction Temperature Tj 150 ue Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit C-B Breakdown Voltage Viprycso Ic=(—)10HAIg=0 Bé32,D612 (—)25 v B632K,D612K (—)35 v C-E Breakdown Voltage Vprycro Ic=(—)lmA,Rpp=° B632,D612 (—)25 Vv B632K, D612K (—)35 Vv E-B Breakdown Voltage VippyeBo Ip=(—)10uAJc=0 (-)5 Vv Collector Cutoff Current Icgo Vop=(—)20V Ip=0 (-)1 pA Emitter CutoffCurrent Ippo Ves=(—)4V,Ic=0 (-)1 pA DC Current Gain hyr(1) Vor=(—)2V,I¢=(—)500mA 60% 320% hpg(2) Vog=(—)2V, Ig=(—)1.5A 30 Gain-Bandwidth Product fy Vog=(—)10V,Io=(—)50mA 100 MHz Output Capacitance Cob Vop=(—)10V, f=1MHz (45)30 pF C-E Saturation Voltage Vor(eat) I¢=(—)1.5A,Ip=(—)0.15A (-0.4)(-0.9) V 03 08 B-E Saturation Voltage Vprat) Ic¢=(—)1.5A,Ip=(—)0.15A (-)1.1(-)1.5 VV Turn-ON Time ton See specified Test Circuit. (60)50 ns Fall Time te ” (80)100 ns Storage Time tetg ” 400 ns 3X : The 2SB632/2SD612 are classified by 500mA hryg as follows. Switching Time Test Circuit Package Dimensions 2009B (For PNP, the polarity is reversed.) 181» (unit : mm) 3.0 10 ~—sIe2 [TES er ve 2 ee pany ——— g]3 PW=20ps 1000 ua T (i —oi} a] 2 + lor" a TY gt ; ww | ur It «| lho: 4 30% Sg . Vog=12V -2v +12v 1: Emitter Ig=10lp1 = —101g2=500mA JEDEC: TO-126 2: Collector 3: Base SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2338/7076, 8-2176 No.341-1/8

2SB632, 632K/2SD612, 612K Ic - Vi Ic - Vy Te=25°C | ITe= 25°C -2h4 —30mA. 2 20mA—— 1 -20 > — p20 — 15mA: fe hee ° Gallecter-to-Emitier Voltage.Vor —V ° Collecter-to-Emitter Voltage Vor v S Ic - Vee Ic - Vee yal VoR= =2V 14|Vor=2V % 0.2 - 04 -0.6 -08 1.0 A? 9 02 04 06 08 10 1.2 Base-to-Emitter Voltage, Vag — V Base-to-Emitter Voltage, Vpg — V fr - Ic fr - Ic 3 5 3 gale=nvl (iT TUT TT) . oe, COC To = GRE EET TT ' a) —_— e a sO ATOLL PCTS eee Ry NS] EE & Mel iT TN) 6é€.Li PACCI) @R : ia 4 EI eT ge et ° sit TTT TT

23 Sp 239 Sing 23 Sty 23 1 235 p 295 mw 23 5 wp 23

Collector Current,lc — mA Collector Current,Ig — mA hee - Ic bre - Ic ° [aSBeRE see : feee=ay IT EAT T TT ? fee CEH ES CU f, CODD Po aot TOT INiT) ¢ NT score tree Ny oS EN $e SE é 3 Cee 8 s/t SaGeee OCCCHCA at ® GE COT Tree eet EH 0 Bian LE 2) 23 540 23 5.09 23 5-00 23 Sono 1235 9 235 wm 235 om 23 Sumo Collector Current,[, — mA Collector Current,Ip — mA ET No.341-2/8

28B632, 632K/2SD612, 612K eS eee . Cob - Vea Cob - Vi PS TLELL Lo *Tespei2 + 2 Fe Ton 1 e100 ee en ee a7 : pt ONT 3 ee ee HPS HH Si TINT ¢: a 33 < 3 Peers pT HET) ope S71 23 5 Ty 2 9 5 Lp a7 4 5 719 3 7 100 Collector-to-Base Voltage, Vc_ — V Collector-to-Base Voltage,Voa — V Vee(sat) Ie . Vee(sat) ~ le 7 a * psoas TTT TTP It ~. SEED Preity Pepe ee HE TAT A cance i da E RAMS ro) A VT ee ni COA gS Coe as sft TO és Cee ps eee zauamntin | aipoasicaiteene BE terpoey i Be? $4 Bdem tl tt TT I 8 on SEE PT : PH EP : Py coe POO ee tore - HE HH -1 23 5-9 235-100 23 5-100 23 S000 1235 9 235 235 p23 5 co Collector Current,Ip — mA Collector Current,I¢ — mA a ASO _ e Pe = Te Pee tH oaH TON ee = x With silicone grease NS \\ SEPP gL _

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Ta=25°C, Single pul gs WN oS 5749 2 9 S57 2sam5 0 Re OD © BO 0 20 mw Collecter-to-Emitter Voltage,Vog — V Case Temperature,Te —°C Po - Ta pat tt ty ew INE TT COONS Te Bo eon, alli TN {tl BOC PN 8 oz N PT TING ol IN [) 2 40 6 [oy 10 200 «KO 160, Ambient Temperature, Ta ~ °C No.341-3/8

2SB632, 632K/2SD612, 612K ee Sample Application Circuit 1: 8W pure complementary amplifier using the 25B632K/2SD612K . [Specifications] Power supply : 100V AC supply transformer with no signal =28.8V, Maximum output = (THD =5%) = 25V, f= 1kHz, Ry =8Q, Rg=6002 typ uint . Quiescent Current Icco Output stage 14.0 mA (Collector Current) Ip Drive stage 42.0 mA Io First stage 14 mA Voltage Gain VG Without NFB 15 dB VG With NFB 40 qB Output Power Po THD =5% 8.7 Ww Total Harmonic Distortion THD Po=1W 0.05 % Input Resistance yj Po=1W 60 kQ Output Resistance To Po=1W 0.2 Q . +Voco (pay at quiescent mode co 0.01 25.0V at maximum output (THD =5%) (Power transformer) ° ——0 RE 6.8k S Bratt 5 SIE 4c ise oe co | 3 ‘cov 5.6k cs at Pr pn, R13 sll voor 25 Eg 08 og grou 35v Data on power transformer input Ct > “4 9 CH 0.01 DC output voltage oe @) 8 os sip ane ourPur {ous Do —— 2a.5v " Sek 4 a6 0.64 DC —— 25.0V % eg Om) Faden (- Ye (FP) x | ey ) () ©) 3%, =p \\ts/TR3 Ts | 42% $6.047 Ji3 Re 2 | av 1g Bk 2nd TRI: 2SC536(DEF) — TR2: 2SC536(DEF) TR4: 25D612K(DEF) ‘TR3: 25D438(DEF) Pi fin .P2 fin TRS : 2SB632K(DEF) 1,02: DS448 03.04: DS135, Note : TR3: With Pl fin or P2fin > TR4, TR5: D, E rank version R12=5600 Frank version R12=4700 ) ‘Must be patred in the same rank,

3 Po - Vi 0 THD - Po

2) [Woo=288v = a OS ee * 3) ncamerpowerswpply-| e {ft tT ee 2 Sleiescent se Bor HL} A so tT & 2|R=82 ee } fT | 18 8 bp to toi LEE TT aT Socrates ¢ aS COE Zee < 33 t gle g | A 2 A | g 2 ee ee ee eee Oe) So LTT A [ vec=28-ev [on 7a SPT HATO T ransformer power supply}. j Ee pee , dr, Quiescent Ey LTE rooms _ LLY || Ry=62 2- [TTT i TTT | ok ery 235 7 73S or? 3 7490 238 7 49 Input Voltage,V, — mV Output Power,Py — W : No.341-4/8

2SB632, 632K/2SD612, 612K . RE BREN OTK

0 THD = fy og Po - f

FT TT rere ewer sup AULT ATT] a aL TTT auiescent z ALS asa . it [ (| 140 THD=5% ~ gr | LCF 3 o7 a J HRS oa PA Orch, 2 / Bott Paeresm m7 2 TTT thi a,HNUT Tw per 2 ‘Transformer power supply ots a Baal | Quiescent FCC eet ee o Ri=8a wo 23 5 1 23 5 % 23 5 tox 23 5 100k 022 5m 225 m 23 5 my 23 Sto, Frequency,f — Hz Frequency,f — Hz f response f response SOL Te LT ee Dian LOT ELE I 0 L i 2 {AInGLNSLAN as a1V-aNatn LOTT TT oe g-2LY| ‘Transformer power supply B ~6 td ransformer power supply| ofA TT Quicscent * LPT | Quiescent LTT] TLL Tt mezs000 UT LTT rg=eoo0 “4 '—0dB = 40dB/1kHz -10 0dB=75dB/1kHz LLL CTT petiwnees ULE ELE iwi Sp PTS wo FSS PSS oe TS 5 wx eo ZFS yo 235 ue 23 5 we 23 5 0% Frequency,f — Hz Frequency,f — Hz ; i- f 7 to - f Voc = 28.1 w Pa a Ry =8Q oo EEE coe L soe d PA | POULIN og AAS i M7 gcHteSES ca ; COTA ee cceeie 3 =28.8V Be aol ELLE) 2S CEN 10 | Quiescent SOTO COTE |Rr=80 PE ASE sow TTT PtP rd a Cit ty TT 02735 0 235% 235 1K 22 510k w 235 wm ?T5 HR 255 EK 23 Soy Frequency f — Hz Frequency,f ~ Hz THD ~ VG Po - Po | iilinteaitigaa [Voltage gain rT. ? (Per transistor at output elage) t 3 4702. 30dB Lt 1 = wo Hi 820: 35dB Bo Youn | dnup BL LET ¢ | oma | dai é Hts iat Boy | 47k0 50dB Leah sol ; er Eo sao | sen agers | Z, ast gt hegeomntrasert Lost | [NNT ee nn Aa 2, | 1 J Guisscent soppy 2 f=1kHz et | [| Pe Po=1W [ | [1 [transformer power supply 001 30 FE wo S Ee Es C) rrr ae) S719 2 3 SF 7 p 2F 3 Voltage Gain, VG — dB _ Output Power,Po — W No.341-5/8

2SB632, 632K/2SD612, 612K SsSeSeeeSSeSeSSSSSSSSSSSSSs Ip, Icco_- Vee Vu, Icco, Ip = Ta ® —* (For Test Gircat,see below. ‘TT 7 70 Ror Teat Circuit.sce below. rll % 60 1. vt 4 EERE a1 7 20 50 sadn A | s Pt é i J z 12 Bx Heat sink |” — SS —— Z| OOO 15 re > "111580 x2mm°Al fin YN Pa 3 3 Vo¢=88.1V yo Rag ict ° Upis%» KT | <8 ailine :258v no 5 oo E—t Dot-dsh line : 33.1V (Up 15%). 456 46 7B BHM HT RD KM » ” oO wo n o 0 6 Supply Voltage, Voc — V Ambient Temperature, Ta — °C Test Circuit Sample Application Circuit 2 : 25D612-Used Supply Voltage Regulation and 4W Input Transformer Coupling Amp for Car Use. ‘Temperature Test Ciruit, [Specifications] Vgg=13.2V, Ry =4Q, Rg=600Q, f=1kHz fsa one typ uint {) Quiescent Current {Icco Outputstage 12.0 mA tn sy (Collector Current) [Ip Drive stage 90 mA +4 our Voltage Gain VG WithoutNFB 66 4B = ia ° VG With NFB 49 4B +HliPy ote) Output Power Po THD=10% 47 W an OM AF TotalHarmonic THD Po=0.5W 08 % = | Distortion Inputimpedance rj Po=0.5W 60 kQ OVec=13.2V R3 1k cit R7 270 - +) cs

2204 TL 470%

‘T6v Rt 18k tt (cys ‘16 C3 330p Ss Xs Data on transformer (T1) e au Pri Secondary F015 ‘imary 10e OY re BS: g tNpuT oO + ry) CK ire 3H PL tg OUT C2 i> S cc 2 RS RS = 710 age 150 ©) th - TRG f ‘om |e | Ss ie R6 6.3V © RZ resistance ee | ae | TRI: 250536 2SCIITS (EF D1.D2:DS442 (Must be paired in the same rank). Unit (Resistance : 0, Capacitance : F) No.341-6/8

2SB632, 632K/2SD612, 612K —_.W THD = Po f response “eee los Rp=40 WL

2 Wieeeceeeeee 4 | 0dB=49dB/1kHz

& TI tthe rT Po =0.1W (constant) || LZ #,. 11 IT HHH ae nau atti TP guy 2 ttt ttt ATT S Waeiai ea litt yy Tyr & 2 \\ LORCA “ech CREST \\ HAR SUT) S379, 8 3 10 57% ae TSS 0255 wh 235 ay 235 ney Output Power,Po — W Frequency,f — Hz ° Po - Vec 0 Po = Po = 7 =10 ann = (Per transistor at output stage) | |_| _| , ej | 7 TT i : :| — | = Pop a) eee i PTT EL ete TN pete aL ster PCPCCCC Neeser PEEP ERR ae 20 " wz 3 % cy 16 7 son 23 5 7 40 273 BT 49 Power Voltage, Vcc — V Output Power,Po — W — Icco,Ip_- Ta o Ieco = Vee vai E ™lecrewed to chassis, EH | i a_! | | | L| fl (Stereo mode) oy f fT | | QE ®|For Test Circuit,see below. | ne 8 28] a ea) | ves BCC oo RSS ba 2 rn ae eee heey, bee =TL] Poot _ $8 pf 1. Woomtey | tp i a a Pte ee] |. oe — os ae 8 he Sa ai 67 Ambient Temperature, Ta — °C Supply Voltage,Vog — V Test Circuit ‘Temperature Characteristics Test Ciruit | : “ Ip er a . No.341-7/8

2SB632, 632K/2SD612, 612K OS No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause: injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any . and all claims and litigation and all damages, cost and expenses associated with such uge: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Bi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- . eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, : This catalog provides information as of September, 1995, Specifications and information herein aro subject to change without notice, No.341-8/8