D5017UK SEME-LAB | Alldatasheet

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Technical content

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 220W 125V ±20V 18A –65 to 150°C 200°C MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED

FEATURES

 SIMPLIFIED AMPLIFIER DESIGN  SUITABLE FOR BROAD BAND APPLICATIONS L O W C rss  SIMPLE BIAS CIRCUITS  LOW NOISE  HIGH GAIN – 10 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

 HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz METAL GATE RF SILICON FET TetraFET A M F E D C B IH K J G DM PIN 1 SOURCE PIN 3 SOURCE PIN 2 DRAIN PIN 4 GATE DIM mm Tol. Inches Tol. A 24.76 0.13 0.975 0.005 B 18.42 0.13 0.725 0.005 C4 5 ° 5° 45° 5° D 6.35 0.13 0.25 0.005 F 5.71 0.13 0.225 0.005 H 6.60 REF 0.260 REF I 0.13 0.02 0.005 0.001 J 4.32 0.13 0.170 0.005 K 3.17 0.13 0.125 0.005 M 26.16 0.25 1.03 0.010

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 I D = 100mA VDS = 50V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 3A PO = 150W VDS = 50V I DQ = 0.6A f = 175MHz VDS = 50V V GS = –5V f = 1MHz VDS = 50V V GS = 0 f = 1MHz VDS = 50V V GS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance 125 4.8 20:1 360 150 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 0.8 °C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. !Freq S11 S21 S12 S22 !Mhz mag ang mag ang mag ang mag ang ! Vds=50V Idq=0.6A # MHZ S MA R 50 Typical S Parameters

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. 16-100pF L1 100nF 100K TT 7 x 7 mm contact pad D5017K T 35pF T T 33pF 10nF10pF 100nF 10uF 1.5K 10-50pF 7 x 7 mm contact pad 100pF T 16-100pF Gate-Bias 50V 100pF T 3.5-25pF 33pF D5017UK 175MHz Test Fixture Substrate 1.6mm PTFE/glass, Er = 2.5 All microstrip lines W= 5mm T1 7.5mm T2 12.5 mm T3 6mm L1 Hairpin loop 18 swg 10mm high, 6.5mm gap L2 Hairpin loop 5mm wide ribbon, 7mm high, 3.5 mm gap L3 9 turns 19swg enamelled copper wire, 6mm id. L4 12 turns 19swg enamelled copper wire on Fair-Rite FT82 ferrite core