D5012UK SEME-LAB | Alldatasheet

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Technical content

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. D5012UK Document Number 6711 Issue 1 PD Power Dissipation BVDSS Drain – Source Breakdo wn Voltage * BVGSS Gate – Source Breakdo wn Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 290W 125V ±20V –65 to 150°C 200°C MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL

FEATURES

  • SIMPLIFIED AMPLIFIER DESIGN
  • SUITABLE FOR BROAD BAND

APPLICATIONS

  • LOW Crss
  • SIMPLE BIAS CIRCUITS
  • LOW NOISE
  • HIGH GAIN – 10 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unlessotherwise stated)
  • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz METAL GATE RF SILICON FET TetraFET * Per Side A M KJ I H G (typ) F E D C B (4 pls) N 5 4 DH PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE 2 PIN 5 GATE 1 DIM mm Tol. Inches Tol. A 13.97 0.26 0.550 0.010 B 5.72 0.13 0.225 0.005 C 45° 5° 45° 5° D 9.78 0.13 0.385 0.005 E 1.65R 0.13 0.065R 0.005 F 23.75 0.13 0.935 0.005 G 1.52R 0.13 0.060R 0.005 H 30.48 0.13 1.200 0.005 I 19.17 0.26 0.755 0.010 J 0.13 0.02 0.005 0.001 K 2.54 0.13 0.100 0.005 M 1.52 0.13 0.060 0.005 N 5.08 0.50 0.200 0.020

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. D5012UK Document Number 6711 Issue 1 Parameter Test Conditions Min. Typ. Max. Unit 125 1 7 2.4 20:1 180 4.5 VGS = 0 ID = 100mA VDS = 50V VGS = 0 VGS = 20V VDS = 0 ID = 10mA VDS = VGS VDS = 10V ID = 1.5A PO = 100W VDS = 50V IDQ = 0.6A f = 500MHz VDS = 50V VGS = –5V f = 1MHz VDS = 50V VGS = 0 f = 1MHz VDS = 50V VGS = 0 f = 1MHz V mA µ A V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unlessotherwise stated) Drain–SourceBVDSS Breakdown Voltage Zero Gate VoltageI DSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* GPS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 0.6°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µ s , Duty Cycle ≤ 2% TOTAL DEVICE PER SIDE PER SIDE