D5006UK SEME-LAB | Alldatasheet
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Technical content
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 220W 125V ±20V 21A –65 to 150°C 200°C MECHANICAL DATA A B C E F G H J D 564 Q PON M K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS L O W C rss SIMPLE BIAS CIRCUITS HIGH GAIN – 13 dB MINIMUM DV PIN 1 SOURCE PIN 3 SOURCE PIN 5 GATE PIN 2 DRAIN PIN 4 SOURCE PIN 6 SOURCE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 9.09 0.13 0.358 0.005 B 19.3 0.13 0.760 0.005 C 45° 5° 45° 5° D 5.71 0.13 0.225 0.005 E 1.65R 0.13 0.065R 0.005 F 10.16 0.13 0.400 0.005 G 20.32 0.25 0.800 0.010 H 19.30 0.13 0.760 0.005 J 1.52R 0.13 0.060R 0.005 K 10.77 0.13 0.424 0.005 M 22.86 0.13 0.900 0.005 N 3.17 0.13 0.125 0.005 O 0.13 0.02 0.005 0.001 P 4.19 0.13 0.165 0.005 Q 6.35 REF 0.250 REF ROHS COMPLIANT
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 I D = 100mA VDS = 50V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 3.5A PO = 150W VDS = 50V I DQ = 0.7A f = 175MHz VDS = 50V V GS = –5V f = 1MHz VDS = 50V V GS = 0 f = 1MHz VDS = 50V V GS = 0 f = 1MHz V mA μA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBVDSS Breakdown Voltage Zero Gate VoltageI DSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* GPS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 125 5.6 20:1 420 175 10.5 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 0.8°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤ 2%