D4KB05 HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o 4.0A
- VRRM 50V-1000V
- High surge current capability
Applications
Polarity: Color band denotes cathode D4K BXX H igh Diode Semiconductor D3K Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications D3 K D3 K D4K B05 THRU D4K B100 Item Symbol Unit Conditions D4K B 05 10 20 40 60 80 100 Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Rectified Output Current I O A 60Hz sine wave, R-load With heatsink Tc=138℃ 4.0 Surge(Non- repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T j =25℃ 135 Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 75 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150 Dielectric Strength V dis KV Terminals to case，AC 1 minute 2 Mounting Torque Tor kg· cm Recommend torque：5kg·cm
Electrical Characteristics
a =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =2.0A, Pulse measurement, Rating of per diode 1.0 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode Thermal Resistance R θ J-A ℃/W Between junction and ambient, Without heatsink R θ J-C Between junction and case, With heatsink 1.5
H igh Diode Semiconductor The cruve graph is for reference only, can't be the basis for judgment NUMBER OF CYCLETS AT 60Hz PEAK FORWARD SURGE CURRENT, AMPERES FIG.2-MAXIMUM NON-REPETITIVE SURGE CURRENT 100 160 180 120 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) FIG.3-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,VOLTS CAPACITANCE,(pF) 10.0 100 1.0 1.0 100 T J =25°C,f=1MH Z 100.0 10.0 1.0 0.1 0.01 02 0 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) INSTANTANEOUS REVERSE CURRENT ,(uA) FIG.5-TYPICAL REVERSE CHARACTERISTICS SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD FIG.1-DERATING CURVE OUTPUT RECTIFIED CURRENT CASE TEMPERATURE, °C AVERAGE FORWARD CURRENT AMPERES 120 140 0.0 1.0 6.0 100 200 3.0 4.0 2.0 5.0 150 INSTANTANEOUS FORWARD CURRENT, AMPERES 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1.0 10.0 20.0 0.2 T C =25°C FIG.4-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD VOLTAGE. VOLTS T C =125°C Pulse Width = 300μs 1% Duty Cycle T J =150°C T J =125°C T J =25°C
H igh Diode Semiconductor D3 K Dimensions in inches and (milimeters) ~~ - 4321 4321 .531(13.5) .555(14.1) .461(11.7) .484(12.3) .437(11.1) .413(10.5) .055(1.4) .047(1.2) .484(12.3) .461(11.7) .276(7.0) .252(6.4) .059(1.5) .043(1.1) .049(1.25) .041(1.05) .034(0.86) .026(0.66) .162 .138 (3.51) (4.11)(4.11) (3.51) .138 .162 (4.11) (3.51) .138 .162 .057(1.45) .110(2.8) .094(2.4) .130(3.3) .114(2.9) .055(1.4) .039(1.0) .024 (0.6) .094(2.4) .071(1.8) .024(0.6) .016(0.4) .134 .122 (3.1) (3.4)