2SB560 SANYO | Alldatasheet

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Ordering number: EN 326H No.326H 2SB560/2SD438 foe PNP/NPN Epitaxial Planar Silicon Transistors = | Low-Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier use. ( ):2SB560 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Yoro (=)100 v Collector to Emitter Voltage Vero (=)80 Vv Emitter to Base Voltage VEBo (-)5 v Collector Current Ig (-)0.7 A Collector Current(Pulse) Iop (-)1.0 08 Collector Dissipation Po 900. oW Junction Temperature vj 150 °% Storage Temperature Tstg “55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ipaq Vope(-)20V,1,=0 (-)1.0 4A Emitter Cutoff Current Ip, Vepe(~)4V,Ig=0 (-)1.0 2A DC Current Gain nee) Veg=(-)5V,Ig=(-)50mA 60# 560* hpp(2) Vog=(-)5V,Ig=(-)0.54 30 Gain-Bandwidth Product fy Vog=(-)10V, I¢=(-)50mA 100 Miz Output Capacitance Cop Vog=(-) 10V, f= 1MBz (15) pF 10 pF —— C-B Breakdown Voltage Y(BR)CBO Tg=10eA (-)100 Vv - C-E Breakdown Voltage V¢pr)ceo Z¢=1MA,Rpp=0o (-)80 v — E-B Breakdown Voltage — V( pr) Epo Ig2(-)10zA,1p=0 (-)5 v = C-E Saturation Voltage Vog(sat) 16=(~)500mA, p= (~)50mA (-0.3)(-0.8) Vv 0.2 0.6 V B-E Saturation Voltage Vag(sat) Ic=(-)500mA,Ig=(~)50mA = (-)0,85(-)1.2 V * The 2SB560/2SD438 are classified by 50mA hp, as follows.

60 D 1201100 E 200 [160 F 320 [200 @ 560

(unit:mm) 30 os i ss) aa @ iz as “ ‘i Pete ELAS: SC-51) B: Base SANYO:HP €: Collector E: Enitter Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters QOKYO OFFICE Tokyo Bidg_1-10.1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN Mm 7997076 0015719 958 MM 5110M0/3267A1/3085MY,TS No.326-1/3 | 256

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Sop = YB 00 Sob ~ Vee eT TUTTE TU) s HEE + * oe i a 2 tt eeu Ht $) [mel TTT TT ef yesesco TTT 33 5 ae = i & fe ti ty rn $7 nee a frescoes PRK 20 | RC ES) et ary TT tie Ty Tr ti [Pili ji Collector to Base Voltage, Vop -Vv Collector to Base Voltage, Vo -Vv ASO ASO gomte] [PT TTT TF [es] woe] [| TT] | | 8] ESSA MRR PRESSE pe Se 2 SB > a 2. aX i MTN ESTE RAT NGS a wtf iT at NG bo RN & 7 ee) Lot oc eT ae a gs iii TTT NT gsitP Try NT s pip Noa 3 a SNe eS) 10 10 ° -100 10 » 100 Collector to Emitter Voltage, Vop -v Collector to Emitter Voltage, Vog -Vv oc, Po - Ta ee ssl REET Feds ta 1 INE fot NTT a eT BTN s°CC PCr TN oO EJ “a CJ 80 wm mw “ww Ambient Temperature,Ta - °C . | mm 25997076 0005721 50h mm 258

= CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS & @ All of Sanyo lead formed small signal transistor case outlines are illustrated below. a @ All dimensions are in mm, and dimensions which are not followed by min, or max. are represented by — typical values. x @No marking is indicated. = _|Case Outline 20034/2003B (unit : mm) Case Outline 2019A/2019B (unit : mm) : 20 0.46 20 ou : ry] 0.45 i 45 i = we ° vs 2 = ie] - 045 | c Cet, lao 5.0. 14.0 —a 4.0: a . JEDEC :TO-92 1: Source JEDEC :TO-82 1: Emitter BIAS :SC-43. 2: Gate * . BIAS :SC-43 2: Collector : [Deal a SANYO (NE a pole SANYO :NP 3: Drain © | Case Outline 2004A (unit: mm) Case Outline 2033 (unit : mm) : 20 0.44 22 xs r| 0.45 | Pop | ry Ty Et: (2 PS 8 as = (78? “LEE EE 1H =" a7 dh ee Ut ‘i s . ht, _| leo 1:Bmitter °* : JEDEC :70.92 1:Base 2: Collector ‘ BIAJ — :SC-43 2: Emitter 3: Base SANYO : NP 3: Collector SANYO: SPA Case Outline 2005 (unit: mm) Case Outline 2034/2034A (unit : mm) 2.0 046 0 ba ae 2 Lee : it 045 C | on 4 30 16.0 4.0: s Oe = - 1:Souree ‘ JEDEC : 0-92 1:Drain 2:Gate BIAS :80-43 a Source 3: Drain : SANYO : NP : SANYO: SPA : Case Outline 2006A (unit: mm) Case Outline 2040 (unit : mm) cy : 30 5 . ry “i r a 15.0 | ry TF q re SST: [PR oes 3 3 Qh =a |" 5 ica 4 1h eee? Ly Os 3 loss 4.0: nel 1:Drain *

5 EIAJ__ : SC-51 1; Emitter 2: Source

SANYO : MP 2: Collector 3:Gate 3: Base SANYO: SPA 16 mm 7997076 0015489 525 mm

Case Outline 2061 (unit: mm) ae 2.0, 0.46 = 0.45 oeo 048 uo hese 14.0 _ wal oa JEDEC :'T0-92 1: Emitter as EIAJ — :SC-43 2: Base eh SANYO : NP 3: Collector ie Case Outline 2064 (unit: mm) 4 p23. nae ay the ce Case Outline 2084A (unit: mm), ae Pee aS Healer Ey 23d joins shwvo:eur bee mm 7997076 0015490 240 mm 17 E: