D42C NJSEMI | Alldatasheet
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^>E.mi-C.ond\\jLc.toi , One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN POWER TRANSISTORS .COMPLEMENTARY TO THE D43C SERIES TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 D42C Series 30-80 VOLTS 3 AMP, 12.5 WATTS Features:
- High free-air power dissipation
- NPN complement to D43C PNP
- Low collector saturation voltage (0.5V typ. @ 3.0A lc)
- Excellent linearity
- Fast Switching CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MIUIMETf RS) TYPE TO-JM TERM. 1 EMITTER TERM. 2 COLLECTOR TEBM. 3 BASE TAB COLLECT:; maximum ratings (TA = 25°C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peakd) Bass Current — Continuous Total Power Dissipation @ TA = 25° C @TC = 25°C Operating and Storage Junction Temperature Range SYMBOL VCEO VCES VEBO ICM IB PD TJ,Tstg 04201,2, 3 2.1 12.5 -SSto+150 D42C4, 5, 6 2.1 12.5 -55 to +150 D42C7, 8, 9 2.1 12.5 -55 to +150 D42C10, 11, 12 2.1 12.5 -55 to +150 UNITS Volts Volts Volts A A Watts thermal characteristics' (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: V4" from Case for 5 Seconds RfiJA R«JC TL +260 +260 +260 +260 °c/w
- CAW NJ Semi-Concluctors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
electrical Characteristics (Tc = 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL WIN TYP MAX UNIT off characteristics*11 Collector-Emitter Sustaining Voltage D42C1.2, 3 (IC= 100mA) ' D42C4, 5, 6 D42C7, 8, 9 D42C10, 11,12 Collector Cutoff Current (VCE = Rated VCES) Emitter Cutoff Current (VEB = 5V) , VCEO(SUS) ICES IEBO 100 Volts gA M second breakdown | Second Breakdown with Base Forward Biased FBSOA SEEFIGURES3&4 on characteristics'11 DC Current Gain D42O1 ,4,7,10 (Ic = 200mA, VCE = 1V) D42C2, 5, 8, 1 1 D42C3, 6, 9, 12 (lc = 1A, VCE= 1V). D42C1.4, 7. 10 <IC = 2A,VCE=1V) gggJtU Collector-Emitter Saturation Voltage (IC = 1 A, IB = 50mA) D42C2, 5, 8, 1 1 D42C3, 6, 9, 12 Oc = 1A, IB = 100mA) D42C1.4, 7, 10 Base-Emitter Saturation Voltage (IC = 1A, IB = 100mA) hFE hFE vCE(sat) VcE(sat) VBE(sat) 100 220 120 0.5 0.5 0.5 1.3 Volts Volts Volts dynamic characteristics Collector Capacitance (VCB = 10V.f = 1MHz) Current-Gain — Bandwidth Product (I C = 20mA, VCE = 4V) CCBO tr 100 PF MHz switching characteristics Resistive Load Delay Time + Rise Time Storage Time Fall Time IC = 1A, IB1 = IB2 = 0.1A. VCG = 3°V. tp = 25 psec td + <r ts tf 100 500 nS (1) Pulse Test PW * 300ms Duty Cycle < 2%.