D41K NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D41K Series -30 - (-50) VOLTS -2 AMP, 10 WATTS TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VERY HIGH GAIN PNP POWER DARLINGTON TRANSISTORS COMPLEMENTARY TO THE D40K SERIES Applications:
- Driver
- Regulator
- Touch Switch
- l.C. Driver
- Capacitor Multiplier
- Audio Output
- Relay Substitute
- Oscillator
- Servo-Amplifier CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 036M<1Q TVPt TO-202 TERM 1 EMITTER TERM 2 BASE TES*. 3 COUECTOR TAB COILECTOP maximum ratings O~A = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peak*1' Base Current — Continuous Total Power Dissipation @ TA = 25° C @TC = 25°C Operating and Storage Junction Temperature Range SYMBOL VCEO VCES VEBO 'CM IB F'D TJ. TSTG D41K1.3 -30 -13 -30 -1.67 -10 -55to+150 D41K2.4 -50 -13 -50 -1.67 -10 -55 to +150 UNITS Volts Volts Volts A A A Watts thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: Vfc" from Case for 5 Seconds RWA RflJC TL 12.5 260 12.5 260 °C/W °c/w (1) Pulse Test: Pulse Width = 300ms. Duty Cycle < 2%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
electrical Characteristics (Tc = 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL MIN TYP MAX UNIT off characteristics*1' Collector-Emitter Voltage D41K1.3 lc=10mA) D41K2.4 Collector Cut-off Current (VCE = Rated VCES) Emitter Cutoff Current (VEB = -13V) VCEO ICES IEBO -30 -50 -.5 -0.1 Volts MA /«A on characteristics DC Current Gain (ic = -200mA, VCE = -5V) (IC = -1 .5A, VCE = -5V) D41 K1 ,2 (|C = -1A, VCE = -5V) D41K3.4 Collector-Emitter Saturation Voltage (IC = -1.5A, IB = -3mA) D41K1.2 (lc = -1 -OA, 1 B = -2mA) D41 K3,4 Base-Emitter Saturation Voltage (IC = -1 .5A, IB = -3mA) D41 K1 ,2 (lc = -1A,lB = -2mA) D41K3.4 hFE hFE VcE(sat) VBE(sat) 10K 1.5 1.5 2.5 2.5 Volts V Volts dynamic characteristics Collector Capacitance (VCE = -10V, f=1MHz) Current-Gain — Bandwidth Product (lc = -20mA, VCE = -5V) CCBO h 100 pF MHz (1) Pulse Test: PW < 300ms Duty Cycle < 2%. Q4IK It COLLCCTOH CUftftCNT IAMC3I FIG. 1 TYPICAL hFE vs. IC FIG. 2 TYPICAL CcBO vs. VOLTAGE -• -O -10 -40 -<0 Ve, COLLCCTON-I«»C VOLTAflC - VOLTS