D41E NJSEMI | Alldatasheet
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, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D41E Series -30 --80 VOLTS -2 AMP, 8 WATTS TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP POWER TRANSISTORS COMPLEMENTARY TO THE D40E SERIES Features:
- High free-air power dissipation
- PNP complement to D40E NPN
- Low collector saturation voltage (0.5V typ. @ 1.0A lc)
- Excellent linearity
- Fast Switching CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) TYPE TO-202 TERM 1 EMITTER TERM 2 BASE TEPM 3 COLLECTOR TAB COLLECTOR maximum ratings (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peakd) Base Current — Continuous Total Power Dissipation @ TA = 25°C @Tc = 25°C Operating and Storage Junction Temperature Range SYMBOL VCEO VCES VEBO lc 'CM IB PD TJ,Tstg D41E1 -30 -45 1.33 -55 to +150 041 E5 -60 -70 1.33 -55 to +150 D41E7 -80 -90 1.33 -55 to +150 UNITS Volts Volts Volts A A Watts thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/e" from Case for 5 Seconds RgJA Rftjc TL 15.6 +260 15.6 +260 15.6 +260 °C/W °C/W (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
electrical Characteristics (TC = 25° C) (unless otherwise specified) I CHARACTERISTIC | SYMBOL " MIN TYP MAX UNIT off characteristics*1' Collector-Emitter Sustaining Voltage D41E1 (lc = 10mA) D41E5 D41E7 Collector Cutoff Current (VCE = Rated VCES) Emitter Cutoff Current (VEB = 5V) VCEO(SUS) ICES IEBO -30 -60 -80 -0.1 -0.1 Volts /*A second breakdown | Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 1 on characteristics DC Current Gain (lc = -100mA, VCE = -2V) (IC = -1A,VCE = -2V) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (lc= 1.0mA, IB = 0.1A) hFE hFE VcE(sat) VBE(sat) 1.0 -1.3 Volts Volts dynamic characteristics Collector Capacitance (VCB --10V, f = 1M|HZ) Current-Gain Bandwidth Product (IC = -100mA, VCE = -10V) CCBO fr 175 PF MHz switching characteristics Resistive Load Delay Time + Rise Time Storage Time Fall Time \\ - -1A, IBI = IBZ = -0.1 A VCC = 30V, tp = 25 Msec td + V ts tf 180 250 110 nS (1) Pulse Test PW = 300ms Duty Cycle £ 2%. IA O.IA PE/. ktf CURRENT CURRE N V I0m« PULSE MAX Js V c.- s s E MAX VCE< MAX I MAX. PULS DUTY v<"
- s^ N , D4IEI POWER CASE * ED OPE CYCLE PULSE DIS RAT < ! Orn. PULSE ) 04IE5— {— , D4IE- X XV ^ V \\ ^ sin 100 VT ON 500 100 Tj- I50«C Tj-25'C Tj—5S'C VCE-ZV 0.01 o.io 1.0 iv iov IDOV FIG. 1 SAFE REGION OF OPERATION Ic-AMPERES FIG. 2 TYPICAL HFE VS lc