D41D NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 PNP POWER TRANSISTORS COMPLEMENTARY TO THE D40D SERIES D41D is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. Features:

  • High free-air power dissipation
  • PNP complement to D40D NPN
  • Low collector saturation voltage (-0.5V typ. @ 1.0A lc)
  • Excellent linearity
  • Fast Switching D41D Series -30 - -60 VOLTS -1 AMP, 6.25 WATTS CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 095-0106 413-2 H67) TYPE T0202 TERM 1 EMIITES TERM 2 BASE TERM 3 COLLECTOR TAB COLLECTOR maximum ratings (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous PeakO) Base Current — Continuous Total Power Dissipation @ TA = 25° C @ TC = 25C Operating and Storage Junction Temperature Range SYMBOL VCEO VCES VEBO ic 'CM IB PD Tj.Tstg D41D1.2 -30 -45 -1.5 -.5 1.67 6.25 -55 to +150 D41D4, 5 -45 -60 -1.5 -.5 1.67 6.25 -55 to +150 D41D7, 8 -60 -75 -1.5 -.5 1.67 6.25 -5510+150 UNITS Volts Volts Volts A A Watts thermal characteristics (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: Ve" from Case for 5 Seconds RftJA R0JC TL +260 +260 +260 °C/W °c/w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

electrical Characteristics (Tc = 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL MIN TYP MAX UNIT off characteristics'1' Collector-Emitter Sustaining Voltage D41D1.2 (lc = 10mA) D41D4, 5 D41D7, 8 Collector Cutoff Current ( VCE = Rated VCEO) Tc = 25° C (VCE = Rated VCES) TC = 1 50° c Emitter Cutoff Current (VEB = sv) VCEO(SUS) ICES 'EBO -30 -45 -60 -0.1 -0.1 Volts M M second breakdown Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 7 on characteristics DC Current Gain D41 D1 . 4, 7 (lc = 1 00mA, VCE = 2V) D41 D2, 5, 8 D41 D1.4.7 (IC = 1A, VCE = 2V) D41D2 D41D5, 8 Collector-Emitter Saturation Voltage (1C = -500mA, IB = -50mA) D41 D1 , 2, 4, 5 D41D7, 8 Base-Emitter Saturation Voltage (lc = -500mA, IB = -50mA) hFE hFE VcE(sat) vBE(sat) 120 150 360 0.5 1.0 1.5 Volts Volts dynamic characteristics Collector Capacitance (VCB = 10V, f = 1Mnz) Current-Gain — Bandwidth Product (lc = -20mA, VCE = -10V) CCBO fr 150 PF MHz switching characteristics m M r „ H N Resistive Load Delay Time + Rise Time Storage Time Fall Time 1C = -1A. IB1 Vcc = -30V, t_ - 2 ip ^ = -0.1A (1) Pulse Test PW = 300ms Duty Cycle < 2%.

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